Coherent Type-B e + e- Pair Production by Photons in a Crystal

An overview of theoretical and experimental studies of the coherent type-B e ⁺ e-pair production by photons in aligned crystals performed at Nuclear Physics Institute at Tomsk Polytechnic University is given.     

Resummation of the jet broadening in DIS

We calculate the leading and next-to-leading logarithmic resummed distribution for the jet broadening in deep inelastic scattering, as well as the power correction for both the distribution and mean value. A truncation of the answer at NLL accuracy, as is standard, leads to unphysical divergences. We discuss their origin and show how the problem can be resolved. We then examine DIS specific procedures for matching to fixed order calculations and compare our results to the data. One of the tools developed for the comparison is an NLO parton distribution evolution code. When compared to PDF sets from MRST and CTEQ it reveals limited discrepancies in both. Received: 16 October 2001 / Published online: 12 April 2002     

Christoffel-Darboux-type formulae and a recurrence for biorthogonal polynomials

It is proved that biorthogonal polynomials obey two different kinds of Christoffel-Darboux-type formulae, one linking polynomials with a different parameter and one combining polynomials with different degrees. This is used to produce a mixed recurrence relation, which is valid for all biorthogonal polynomials. This recurrence relation establishes several results on interlacing property of zeros of successive biorthogonal polynomials and leads to a new result on the interlace of zeros of orthogonal polynomials (of equal degrees) with respect to two distributionsdψ(x) andx ^p dψ(x), 0<p≤1, with support in either [0, 1] or [1, ∞).     

On Periodic Solutions of Degenerate Singularly Perturbed Linear Systems with Multiple Elementary Divisor

We establish sufficient conditions for the existence and uniqueness of a periodic solution of a system of linear differential equations with a small parameter and a degenerate matrix of coefficients of derivatives in the case of a multiple spectrum of a boundary matrix pencil. We construct asymptotics of this solution.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Laser diagnostics of nanoscale dielectric films on absorbing substrate by differential reflectivity and ellipsometry

The differential reflection characteristics for ultrathin inhomogeneous dielectric film on absorbing substrate are investigated in the long-wavelength approximation. The obtained first-order expressions for differential reflectivity and changes in the ellipsometric angles caused by ultrathin layer are of immediate interest to the solution of the inverse problem. The method to determine the averaged values (not the realistic profile) of refractive index for inhomogeneous nanometric films are shown. The novel possibilities for determining the dielectric constant and thickness of nanoscale homogeneous films by the differential ellipsometric and reflectivity measurements are developed, and a simple method to estimate whether the nanometric film is homogeneous or not is also discussed.