muSR study of the quantum dynamics in the frustrated S=3/2 kagomé bilayers

We present muSR experiments in the S=3/2 kagomé bilayer compound Ba(2)Sn(2)ZnGa(10-7p)Cr(7p)O22 [BSZCGO(p)] and compare it to the isostructural SrCr(9p)Ga(12-9p)O19 [SCGO(p)], including for the latter new results for p > or =0.89. Quantum-dynamical low energy magnetic excitations are evidenced in this novel compound. We study the evolution of the muon relaxation rate with p, T, and field. A phenomenological model for the muon relaxation based on sporadic dynamics due to spin excitations in a singlet sea proposed by Uemura et al. is extended to all fields and T range. Its connection to the RVB picture is discussed, and we argue that such coherent states might mediate the interactions between "impurities" which induce the spin glass freezing.     

Surface model for field emission processes

The processes of field electron emission from solids and field ion production at surfaces are well understood for plane emitting surfaces. The actual surfaces are not plane on an atomic scale and it is worthwhile to develop a way to treat deviations from a flat surface quantitatively, at least to some extent. In this paper the model of a hemispherical projection on a plane surface is set up, as an approximation to the way that an atom projects from the background of a crystalline surface. It is expected that the model will be valuable in analyzing various field emission processes. Application is made to the resolving power of the field ion microscope.     

螺旋波激发甲烷等离子体光谱诊断

利用螺旋波激发等离子体化学气相沉积(LPP-CVD)技术,以甲烷和氦气为反应气体产生等离子体.通过采集到甲烷的可见光到紫外发射光谱,对甲烷等离子体进行原位诊断,发现存在CH、Ha及Hβ等碎片粒子的光辐射,同时,分析了不同入射功率、气压下CH粒子以及Hβ、Hγ的相对强度变化情况.结果表明:CH粒子的相对强度随着射频功率是先增大而后减小,随工作气压的增大而逐渐减小;随气压及功率的增加,Hβ、Hγ相对强度变化的总体趋势都是先增加而后减小的.     

Optical–thermal simulation applied to the study of the pattern effects induced by the sub-melt laser anneal process in advanced CMOS technologies

We present a study of the temperature non-homogeneities induced by millisecond laser annealing in advanced CMOS technologies at die level. Because of the design, the device layout at the wafer surface introduces during this anneal significant spatial variations of optical absorption and heat transfer that can induce temperature non-uniformities over the die, often called ‘pattern effects’. These temperature variations are becoming a major issue, since they are the origin of significant device properties dispersion. A complete optical and thermal simulation set has been developed to estimate the temperature variations induced by the topologies at the wafer surface during the laser anneal process. The modelling has been validated by either a comparison with another software or reflectometry and electrical measurements on real structures. This work demonstrates that the temperature variations are caused either by optical coupling or by thermal properties dispersion present at the wafer surface at the anneal step. Finally, we demonstrate that the impact of the thin-film interferences and diffraction phenomena is the critical issue for these pattern effects.     

Ground state of the kagomé-like S=1/2 antiferromagnet volborthite Cu3V2O7(OH)2 x 2H2O

The volborthite compound is one of the very few realizations of S=1/2 quantum spins on a highly frustrated kagomé-like lattice. Low-T SQUID measurements reveal a broad magnetic transition below 2 K which is further confirmed by a peak in the 51V nuclear spin relaxation rate (1/T1) at 1.4 K +/- 0.2 K. Through 51V NMR, the ground state (GS) appears to be a mixture of different spin configurations, among which 20% corresponds to a well defined short-range order, possibly of the sqrt(3) x sqrt(3) type. While the freezing involves all the Cu2+ spins, only 40% of the copper moment is actually frozen which suggests that quantum fluctuations strongly renormalize the GS.