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881.
Sang Ro Park 《Mathematische Nachrichten》1999,198(1):169-178
In this paper the non-existence of global solutions of two fourth-order hyperbolic equations with dynamic boundary conditions is considered. Here we prove stronger results than that of M. Kirane, S. Kouachi and N. Tatar by a different method. 相似文献
882.
Dr. Chi Kyung Kim Taeho Kim In‐Young Choi Min Soh Dr. Dohoung Kim Young‐Ju Kim Dr. Hyunduk Jang Hye‐Sung Yang Dr. Jun Yup Kim Dr. Hong‐Kyun Park Dr. Seung Pyo Park Sangseung Park Dr. Taekyung Yu Prof. Byung‐Woo Yoon Prof. Seung‐Hoon Lee Prof. Taeghwan Hyeon 《Angewandte Chemie (International ed. in English)》2012,51(44):11172-11172
883.
Si was deposited on the glass substrate as an interlayer for the 2-D growth of Ag thin films because Si has a strong binding energy against Ag and can lead to a negative surface energy change in Ag/glass. The Si interlayer induced an extremely smooth and flat Ag surface, which effectively reduced the resistance and enhanced the reflectance in the IR region. In particular, Ag (9 nm)/Si (3 nm)/glass showed 0.074 emissivity and ∼91% reflectance in the IR region with 67% transmittance in the visible region. 相似文献
884.
885.
Background
Prestimulus EEG alpha activity in humans has been considered to reflect ongoing top-down preparation for the performance of subsequent tasks. Since theta oscillations may be related to poststimulus top-down processing, we investigated whether prestimulus EEG theta activity also reflects top-down cognitive preparation for a stimulus. 相似文献886.
887.
A silicon wafer implanted with a single low energy (42 keV) silicon ion beam results in strong luminescence at room temperature. The implantation results in the formation of various luminescent defect centers within the crystalline and polymorphous regions of the wafer. The resulting luminescence centers (LC) are mapped using fluorescence lifetime imaging microscopy (FLIM). The emission from the ion-implanted wafer shows multiple PL peaks ranging from the UV to the visible; these emissions originate from bound excitonic states in crystal defects and interfacial states between crystalline/amorphous silicon and impurities within the wafer. The LCs are created from defects and impurities within the wafer and not from nanoparticles. 相似文献
888.
Y. J. Shin I. S. Kim H. S. Shin S. G. Ro H. S. Park 《Journal of Radioanalytical and Nuclear Chemistry》1999,240(3):815-821
In order to determine the operating conditions of an uranium reduction process with U3O8-Li-LiCl system, the operating conditions have been evaluated in thermodynamic aspects and the results were experimentally
confirmed in this study. All the reduction experiments were conducted in an argon atmospheric glove box, and the resultant
degree of reduction was determined by analyzing the product using XRD and TGA. In the results of this study, a reduction yield
greater than 95% is achieved within about 3 hours of reaction. The effects of the added quantity of Li and LiCl to the reduction
yield of U3O8 and the preferential removal of several metal oxides accompanying U3O8 in the course of reduction were discussed. For a greater reduction of U3O8, an additional 20% of Li is required when compared to the stoichiometric composition. The proper composition of LiCl is about
75% based on the weight of U3O8 charged. 相似文献
889.
890.