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71.
A pressure sensitive paint (PSP) measurement has been known as a pressure field measurement technique based on the oxygen quenching phenomenon of luminescence of specific luminophores. A PSP measurement was applied for pressure field measurement in a low-solidity circular cascade diffuser of a single-stage transonic centrifugal compressor with 5 in pressure ratio for HFC134a gas. The oxygen concentration was about 500 ppm. Ru (bath-phen) was adsorbed on a silica-gel thinlayer chromatography sheet, and the sheet was pasted onto the side-wall between the cascade vanes. A drastic change in luminescent intensity was recognized during a surge condition. Also the pressure variations based on luminescent intensity agreed well with the pressure fluctuations measured using a semiconductor pressure sensor with high-frequency-response. It was shown that a PSP measurement worked well to investigate the unsteady pressure fields in a circular cascade diffuser of a transonic centrifugal compressor. Moreover, the time response of PSP becomes clear as a problem to be overcome for the present. 相似文献
72.
本文介绍一种用牛顿力学研究赛跑运动的物理模型,给出两种情形下跑步时间的最优化结果.这一结果与优秀运动员的实际比赛成绩很好地相符. 相似文献
73.
74.
Bo Jin Xi Wang Jing Chen Feng Zhang Xinli Cheng Zhijun Chen 《Applied Surface Science》2006,252(16):5627-5631
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si1−xGex (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si1−xGex (x is minimal) layer moved to Si/SiO2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM). 相似文献
75.
在保持非负定性不变的前提下,本文对矩阵每一元素容许多大的扰动作了进一步的研究, 将本文的结论和C.R.Johnson提出的部分正定阵的正定完备化进行比较,容易发现对已知的正定矩阵求扰动,本文的结论比用C.R.Johnson的正定完备化计算扰动形式上更简单,同时也给出了不同于C.R.Johnson的部分正定阵的正定完备化表示的另外一个公式,推出了这些正定完备化矩阵应具有的若干性质. 相似文献
76.
77.
Dual fractional cutting plane algorithms, in which cutting planes are used to iteratively tighten a linear relaxation of an integer program,
are well-known and form the basis of the highly successful branch-and-cut method. It is rather less well-known that various primal cutting plane algorithms were developed in the 1960s, for example by Young. In a primal algorithm, the main role of the cutting
planes is to enable a feasible solution to the original problem to be improved. Research on these algorithms has been almost
non-existent.
In this paper we argue for a re-examination of these primal methods. We describe a new primal algorithm for pure 0-1 problems based on strong valid inequalities and give some encouraging computational results. Possible extensions to the case of general
mixed-integer programs are also discussed. 相似文献
78.
Yasuyuki Kawahigashi 《Communications in Mathematical Physics》2002,226(2):269-287
We study the recent construction of subfactors by Rehren which generalizes the Longo–Rehren subfactors. We prove that if
we apply this construction to a non-degenerately braided subfactor N⊂M and α±-induction, then the resulting subfactor is dual to the Longo–Rehren subfactor M⊗M
opp⊂R arising from the entire system of irreducible endomorphisms of M resulting from αplusmn;-induction. As a corollary, we solve a problem on existence of braiding raised by Rehren negatively. Furthermore, we generalize
our previous study with Longo and Müger on multi-interval subfactors arising from a completely rational conformal net of factors
on S
1 to a net of subfactors and show that the (generalized) Longo–Rehren subfactors and α-induction naturally appear in this context.
Received: 11 September 2001 / Accepted: 7 October 2001 相似文献
79.
Julio Castellanos 《Mathematische Zeitschrift》2002,239(4):777-802
We consider complete ideals supported on finite sequences of infinitely near points, in regular local rings with dimensions
greater than two. We study properties of factorizations in Lipman special *-simple complete ideals. We relate it to a type
of proximity, linear proximity, of the points, and give conditions in order to have unique factorization. Several examples
are presented.
Received: 2 February 2000 / in final form: 14 March 2001 / Published online: 18 January 2002 相似文献
80.