Electron transport in sub-micron GaAs channels at 300 K

Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 μm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×10⁷ cm/s for 0.1 μm samples.     

Propagation of cylindrical blast waves in magneto-gas dynamics

Résumé Nous obtenons, dans cet article, des solutions sous forme finie, pour une explosion en ligne dans un milieu ou la pression, la densité et le champ magnétique axial sont des constantes. La surface de choc, cylindrique, se déplace vers l'extérieur, a travers le gaz au repos, et l'énergie totale de l'onde n'est pas constante, mais varie lentement avec le temps.     

Raman correlation function for generalized M-diffusion model

A generalized version of Gordon's M-diffusion model for reorientation of molecules in dense phase was proposed by Duttagupta and Sood. They calculated the IR correlation function and compared it with a few experimental data. We calculate the Raman correlation function for this model and compare it with experimental data for OCS, N₂O in CCl₄, and CH₃I. We find that at short times, the agreement with the experimental data is much better than that for Gordon's M-diffusion model. We have also shown that, at long times the correlation function decays as an inverse power of time. However, the experimental correlation function at long times decays much faster.     

Competing ferromagnetism and superconductivity on FeAs layers in EuFe2(As0.73P0.27)2

We have measured the spin-polarized electron momentum density distributions of EuFe2(As0.73P0.27)2 by magnetic Compton scattering (MCS) measurements. For the first time, we show direct evidence of competing ferromagnetism and superconductivity (SC) on FeAs layers in this iron pnictide system. The MCS orbitalwise decomposition of the density distributions reveals that between 16 and 19 K, the spin-polarized Fe-3d character is enhanced (as the ferromagnetic character supersedes superconducting character), where the resistivity shows a maximum, reentrant SC-like peak, at 18 K. The spin polarization of the Fe-3d orbital, enhanced by ferromagnetic Eu ions, suppresses the SC around 18 K, while at other temperatures the system indeed exhibits SC where the Fe-3d spin polarization is suppressed or collapses.     

Synthesis of SnS thin films via galvanostatic electrodeposition and fabrication of CdS/SnS heterostructure for photovoltaic applications

In this work SnS thin films were electrochemically deposited on ITO coated glass substrate by galvanostatic electrodeposition at different pH of the plating bath. The working electrode used in these studies was low cost high purity graphite rod. The as-deposited films were found to be smooth, pinhole free and well adherent to the substrate with no powdery deposition. EDX measurements revealed that all the SnS films were non-stoichiometric in nature with variation from Sn-excess to S-excess compositions. XRD pattern showed that all the SnS thin films had orthorhombic polycrystalline structure. The direct bandgaps of all the films were found to be in the range 1.54-1.58 eV. ITO/SnS/In structure exhibited linear current-voltage characteristics, establishing the ohmic nature of both ITO/SnS and SnS/In junctions. Furthermore, SnS layer was grown on CdS film using electrodeposition technique. The heterostructure ITO/CdS/SnS/In was characterized under dark and illuminated conditions. From forward biased I-V characteristics several junction parameters like barrier height, diode ideality factor and series resistance of the heterostructure were extracted using Cheung model.     

Growth and characterization of Cd1−xZnxTe thin films prepared from elemental multilayer deposition

Cd_1−xZn_xTe is a key material for fabrication of high-energy radiation detectors and optical devices. Conventionally it is fabricated using single crystal growth techniques. The method adopted here is the deposition of elemental multilayer followed by thermal annealing in vacuum. The multilayer structure was annealed at different temperatures using one to five repetitions of Cd-Zn-Te sequence. X-ray diffraction pattern for the multilayer with five repetitions revealed that annealing at 475 °C yielded single-phase material compared to other annealing conditions. EDX spectroscopy was carried out to study the corresponding compositions. Photoluminescence properties and change of resistance of the multilayer under illumination were also studied. The resistivity of the best sample was found to be a few hundreds of Ω cm.     

Higher and lower-level knowledge discovery from Pareto-optimal sets

Innovization (innovation through optimization) is a relatively new concept in the field of multi-objective engineering design optimization. It involves the use of Pareto-optimal solutions of a problem to unveil hidden mathematical relationships between variables, objectives and constraint functions. The obtained relationships can be thought of as essential properties that make a feasible solution Pareto-optimal. This paper proposes two major extensions to innovization, namely higher-level innovization and lower-level innovization. While the former deals with the discovery of common features among solutions from different Pareto-optimal fronts, the latter concerns features commonly occurring among solutions that belong to a specified (or preferred) part of the Pareto-optimal front. The knowledge of such lower-level information is extremely beneficial to a decision maker, since it focuses on a preferred set of designs. On the other hand, higher-level innovization reveals interesting knowledge about the general problem structure. Neither of these crucial aspects concerning multi-objective designs has been addressed before, to the authors’ knowledge. We develop methodologies for handling both levels of innovization by extending the authors’ earlier automated innovization algorithm and apply them to two well-known engineering design problems. Results demonstrate that the proposed methodologies are generic and are ready to be applied to other engineering design problems.     

Layer thinning transition in an achiral four-ring hockey stick shaped liquid crystal

Depolarized reflected light microscopy and high resolution optical reflectivity measurements have been conducted on free-standing films of an achiral four-ring hockey stick shaped liquid crystal exhibiting SmA-B2–SmX* transition sequence. A layer thinning transition above the bulk isotropic-SmA phase transition has been observed. This behaviour was highly irreproducible, indicating an irregular layer thinning transition. From optical reflectivity data, both thickness of the free-standing films and the smectic interlayer spacing were determined. This is the first report of the layer thinning transition in a hockey stick shaped liquid crystal.