DX<Superscript>−</Superscript> center formation in planar-doped GaAs:Si in strong electric fields

The kinetics of current decay and partial restoration in planar doped GaAs:Si due to the formation of DX^? centers in strong electric fields has been experimentally studied. The existence of thresholds with respect to the field strength and donor concentration is explained. A model of the DX^? center formation is proposed, which is based on the notions about variation of the depth and width of a potential well created by planar doping, caused by the redistribution of hot electrons between quantum confinement subbands. As a result, the energy level of DX^? centers, which is situated above the potential well depth in the absence of strong field, decreases and falls within the potential well. This makes possible the DX^? center formation, provided that hot electrons, occupying the resonance electron levels in the conduction band, simultaneously excite local vibrational modes.     

Characteristics of high-power radiating imploding discharge with cold start

A qualitative model of the dynamics of a multiterawatt radiating Z-pinch with cold start and high rate of current rise is proposed. The model is used to analyze discharges with currents I ～ 2–5 MA (with dI/dt > 10¹³ A/s) through uniform or structured plasma-producing loads, including wire arrays. The most important consequence of cold start is that spatially nonuniform plasma production is prolonged to almost the entire current rise time. Under these conditions, the Ampére force begins to play a dominant role in the plasma dynamics before the plasma-producing load is completely transformed into an accelerated plasma. The results of computations of wire-array vaporization are presented. A formula is proposed for estimating the highest attainable velocity of plasma flow into a heterogeneous liner driven by the Ampére force. It is shown that local imbalance between radial motion of the produced plasma and supply of the plasma-producing substance to be ionized leads to axially nonuniform breakthrough of magnetic flux into the liner, which precedes plasma collapse. The magnetic-flux breakthrough gives rise to a chaotic azimuthal-axial plasma structure consisting of radial plasma jets of relatively small diameter, which is called a radial plasma rainstorm. The breaking-through azimuthal magnetic flux obstructs further current flow in the breakthrough region. Analyses of Z-pinch implosion based on the theory of Rayleigh-Taylor instability or the snowplow model are incorrect under the plasma-rainstorm conditions. The processes taking place in a stagnant Z-pinch include conversion of the energy carried by the current-generated magnetic field into turbulent MHD flow of the ion component of the plasma, its convective mixing with magnetic field, heating, energy transfer from ions to electrons, and emission from the plasma. Under typical experimental conditions, emission plays a key role in the energy balance in an imploding pinch. Z-pinch is modeled by an electric-circuit component that has a time-dependent nonlinear impedance and consumes the magnetic energy supplied by a generator through a magnetically insulated transmission line (MITL). The peak power reached in the circuit is comparable to the peak soft X-ray power output emitted by the pinch in terms of magnitude and timing. Optimum matching conditions are formulated for the generator-MITL-pinch circuit.     

Currently available methods of industrial nanodiamond synthesis

The main theoretical aspects of detonation decomposition of powerful mixed explosives with a negative oxygen balance accompanied by the formation of nanodiamonds (ultrafine-dispersed diamonds, UDDs) are described. The basic UDD synthesis parameters are considered, and the expediency of using trotyl-hexogen alloys is shown. The conditions of diamond phase conservation in the detonation products are specified. Various versions of industrial detonation synthesis of UDDs are considered. The most efficient technology of chemical cleaning of UDDs (with nitric acid at high temperatures and pressures) for producing UDDs with the highest purity is described.

     

Plasmon-induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure

The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of terahertz photo-conductivity in such a structure.     

Diffusion of a low-soluble impurity in a solid matrix

An analytical expression for the concentration profile of a low-soluble diffusant in a sample is derived for a high-capacity diffusion source. The model is checked by determining the diffusion coefficient of yttrium in beryllium.     

Low-power RF plasma sources for technological applications: II. plasma sources under anomalous skin effect conditions

A theory of a planar disk-shaped RF plasma source under anomalous skin effect conditions is developed. In the absence of an external magnetic field, such conditions are satisfied for transverse electromagnetic waves with phase velocities below the electron thermal velocity, and, in the presence of this field, they are satisfied for electron cyclotron waves with frequencies corresponding to the resonant absorption line. For each of these cases, the RF field power deposited in a plasma with given parameters is determined and the equivalent plasma resistance is calculated.     

Determination of the glueball mass spectrum with allowance for spin-orbital interactions

The mass spectrum of a coupled state is analytically determined. The mechanism of production of a constituent mass of particles forming a coupled state is explained. The change of the coupled state and constituent particle component masses attendant to changes of the coupling constant is analyzed. The mass spectrum of a two-gluon glueball is determined with allowance for spin-orbital and spin-spin interactions.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 33–41, December, 2004.     

On the Nature of Radiation Resistance in Compensated Silicon

Russian Physics Journal -