全文获取类型
收费全文 | 2096篇 |
免费 | 349篇 |
国内免费 | 270篇 |
专业分类
化学 | 1526篇 |
晶体学 | 34篇 |
力学 | 130篇 |
综合类 | 34篇 |
数学 | 185篇 |
物理学 | 806篇 |
出版年
2024年 | 9篇 |
2023年 | 42篇 |
2022年 | 86篇 |
2021年 | 69篇 |
2020年 | 103篇 |
2019年 | 77篇 |
2018年 | 77篇 |
2017年 | 47篇 |
2016年 | 98篇 |
2015年 | 77篇 |
2014年 | 96篇 |
2013年 | 128篇 |
2012年 | 191篇 |
2011年 | 168篇 |
2010年 | 119篇 |
2009年 | 107篇 |
2008年 | 125篇 |
2007年 | 115篇 |
2006年 | 93篇 |
2005年 | 108篇 |
2004年 | 75篇 |
2003年 | 48篇 |
2002年 | 64篇 |
2001年 | 33篇 |
2000年 | 34篇 |
1999年 | 49篇 |
1998年 | 48篇 |
1997年 | 45篇 |
1996年 | 57篇 |
1995年 | 42篇 |
1994年 | 51篇 |
1993年 | 53篇 |
1992年 | 31篇 |
1991年 | 31篇 |
1990年 | 30篇 |
1989年 | 15篇 |
1988年 | 7篇 |
1987年 | 14篇 |
1986年 | 20篇 |
1985年 | 13篇 |
1984年 | 2篇 |
1983年 | 6篇 |
1982年 | 5篇 |
1981年 | 4篇 |
1980年 | 2篇 |
1979年 | 1篇 |
排序方式: 共有2715条查询结果,搜索用时 15 毫秒
991.
在中国科学院力学研究所$\varPhi $ 800 mm高温低密度激波管上进行电磁波在等离子体中传输机理研究时,低密度和强激波条件下,由于气体解离和电离等非平衡过程,使得激波后2区宽度显著减小;同时由于边界层效应造成激波衰减和接触面加速,使得激波后2区长度进一步减小.这两个效应导致激波管2区实验观测 时间减小,2区气体处于非平衡状态,增加了观察数据的不稳定性和数据分析的难度.本文提出在$\varPhi 800 $ mm高温低密度激波 管中采用氩气(Ar)和空气(Air)混合气替代纯空气作为激波管实验介质气体.利用Ar不解离和难电离的特性,减小激波前后压缩比,从而 增加激波后2区实验时间和气体长度. 采用Langmuir 静电探针和微波透射诊断技术测量激波后电子密度,同时利用探针测量激波后2区实验时间.结果显示,在Ar+Air混合气实验中,激波波后电子密度可达与纯Air同样的10$^{13}$cm$^{ - 3}$量级.在与纯Air相同的电子密度和碰撞频率条件下,采用95%Ar+5%Air和90%Ar+10%Air两种混合气,激波后2区实验时间和气体长度约为纯Air条件下的5$\sim $10倍,其中2区实验时间为300$\sim $800 $\mu$s,2区气体长度1$\sim $1.5 m.在$\varPhi $800 mm激波管中采用Ar+Air介质气体进行电磁波传输实验,获得了比在纯Air介质中与理论预测更一致的结果. 相似文献
992.
Bifunctional Pancharatnam‐Berry Metasurface with High‐Efficiency Helicity‐Dependent Transmissions and Reflections 下载免费PDF全文
Tong Cai Guang‐Ming Wang He‐Xiu Xu Shi‐Wei Tang Haipeng Li Jian‐Gang Liang Ya‐Qiang Zhuang 《Annalen der Physik》2018,530(1)
Manipulating circularly‐polarized (CP) waves in desired multi‐prescribed manners, especially in both transmission and reflection schemes, in a single flat device is of particular importance in photonic integration, imaging processing and communication systems. However, available approaches suffer from large thickness, low efficiencies as well as limited wavefront control spaces. Here, we propose a general strategy by using specially tailored Pancharatnam‐Berry (PB) meta‐atoms with helicity‐dependent transmissions and reflections to design high‐efficiency CP bifunctional metasurfaces. As a proof of the strategy, two metadevices are designed and characterized at microwave frequencies: the former one achieving focusing/diverging lenses at transmission/reflection side of the metasurface; the latter one realizing CP beam separation under illuminations of CP waves with different chirality, respectively. Both numerical and experimental results demonstrate the predicted EM functionalities, and all these functionalities exhibit very high efficiencies (88%~94%). Our findings afford a new route to design high‐performance CP bi‐functional metasurfaces operating in other frequency domains or with other functionalities. 相似文献
993.
本文采用激光脉冲沉积(pulsed laser deposition,PLD)方法在NdGaO3(110)(NGO)和(LaAlO_3)_(0.3)(Sr_2AlTaO_6)_(0.7)(001)(LSAT)衬底上生长了厚度变化的钙钛矿结构CaIrO3(CIO)单晶薄膜.在这一体系中,我们观测到了金属绝缘转变现象以及各向异性电输运行为,并且尝试利用应变弛豫调节铱氧八面体绕[100]轴的扭转角度,改变金属绝缘转变温度(TMI).八面体的扭转角度在30nm厚的样品中取得了最大值,同时CIO的TMI取得了最小值.我们推测是八面体的扭转影响了CIO薄膜的带隙宽度,从而造成了TMI的变化以及各向异性电输运行为. 相似文献
994.
995.
The influence of precipitation on the recrystallization nucleation and mechanical properties of Al-Mg-Si-Cu-Zn alloys was investigated by means of tensile tests, SEM, TEM, XRD and EBSD. The results reveal that there are distinct contributions from the various precipitates that form during annealing and that these critically influence the evolution of microstructure and its associated texture, as well as mechanical behaviour. In contrast to alloy sheets A, B, and C annealed at a lower temperature or for a shorter time, the T4P alloy sheet D with an annealing at 450°C for 3?h not only possesses almost identical strength and elongation, but also a higher average r (0.659) and n (0.313) values, and also a lower Δr (0.091) value. After solution treatment, the four alloy sheets are comprised of equiaxed grains with somewhat different grain sizes and different textures, but texture volume fraction and grain size in alloy sheet D both are decreased due to the effect of precipitate-assisted nucleation during solution treatment. The corresponding nucleation and growth mechanisms of recrystallization grains were established and the relationship between textures and r value in the four alloy sheets was also analyzed on the basis of a Visco-plastic self-consistent (VPSC) model. 相似文献
996.
本文首先介绍了激光武器在未来战争中的突出地位和发展现状,阐明了高能激光束与目标材料相互作用时的热效应毁伤机理;总结了基于等离子喷涂的反射型激光防护涂层的研究进展,包括等离子喷涂金属涂层和陶瓷涂层的研究进展、以及各自的技术特点和防护效果,为高能激光防护领域的研究提供了借鉴。研究结果表明,控制金属涂层在激光辐照过程中的氧化现象能有效地提高涂层的激光防护性能,同时具有优异反射性能的新型陶瓷涂层在高能激光防护领域中有较好的发展前景。 相似文献
997.
温度对尖晶石LiMn2O4中锂离子嵌脱过程的影响 总被引:1,自引:0,他引:1
运用电化学阻抗谱研究了商品化尖晶石LiMn2O4电极在1 mol/L LiPF6-EC(碳酸乙烯酯):DEC(碳酸二乙酯)电解液中―10~30 ℃范围内的阻抗谱特征、固体电解质相界面(SEI)膜阻抗、电子电阻和电荷传递电阻等随温度的变化. 研究结果表明, 尖晶石LiMn2O4电极的阻抗谱特征与温度有关, 随温度的升高, 与活性材料电子电导率相关的半圆和与SEI膜相关的半圆会发生重叠而成为一个半圆. 通过选取适当的等效电路拟合了实验所得的电化学阻抗谱数据, 测得尖晶石LiMn2O4电极在1 mol/L LiPF6-EC:DEC 电解液中, 锂离子迁移通过SEI膜的离子跳跃能垒平均值为15.49 kJ/mol; 电子电导率的热激活化能平均值为24.21 kJ/mol; 嵌入反应活化能平均值为53.07 kJ/mol. 相似文献
998.
Guozong Zheng Jingkui Liang Zhengdong Li Genbo Su Xinxin Zhuang 《Crystal Research and Technology》2008,43(6):583-587
The combined effects of supersaturation and Ba2+ on potassium dihydrogen phosphate (KDP) were investigated in batch cooling suspension crystallization. Growth size, morphology, and impurity Ba2+ adsorbed in the KDP crystals were measured with changing Ba2+ concentration and supersaturation. Significant changes in shapes and volume of the grown crystals have been observed. The results further confirmed that the size and shape of crystals were greatly determined by supersaturation. Ba2+ ions significantly modified the growth habit of KDP crystals. The concentration of Ba2+ ions adsorbed in the crystals increases with the increasing Ba2+ ions in the solutions and supersaturation. The foggy phenomena caused by the addition of Ba to the KDP solution were also described. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
999.
ZnO thin films with different thickness (the sputtering time of ZnO buffer layers was 10 min, 15 min, 20 min, and 25 min, respectively) were first prepared on Si substrates using radio frequency magnetron sputtering system and then the samples were annealed at 900 °C in oxygen ambient. Subsequently, a GaN epilayer about 500 nm thick was deposited on ZnO buffer layer. The GaN/ZnO films were annealed in NH3 ambient at 950 °C. X-ray diffraction (XRD), atom force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to analyze the structure, morphology, composition and optical properties of GaN films. The results show that their properties are investigated particularly as a function of the sputtering time of ZnO layers. For the better growth of GaN films, the optimal sputtering time is 15 min. 相似文献
1000.