Separate Polarization Modes Synchronization and Synchronization Switches between Vertical-Cavity Surface-Emitting Lasers

For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate and spontaneous emission factor.     

Mackey Theory for p-adic Lie Groups

This paper gives a p-adic analogue of the Mackey theory, which relates representations of a group of type G - H × t A to systems of imprimitivity.     

倾斜下降管气液两相分层流截面含气率的计算与液层高度的预测

分层流是气液两相流中常见的流动型式，分层流中液层高度是计算的基本数据，由于界面波的存在，对液层的测量和预测都很困难．Ｖｌａｃｈｏｓ提出了预测气液两相分层流液层厚度的关系式，但这一关系式并不适用于倾斜下降管气液两相流．本文提出了计算倾斜下降管气液两相分层流截面含气率的理论模型，在这种模型下得到的截面含气率和实验结果符合良好．在大量实验的基础上，考虑了倾角、管径、气液各相折算速度的影响，根据实验数据提出了预测液层厚度的关系式。     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.     

An implicit method for linear ill‐posed problems with perturbed operators

An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd.     

通过平均场处理的严格重正化群变换方法对Potts模型的应用

本文运用作者所发展的严格docimation- 平均场近似方法对Potts 模型的临界指数作了计算.所得结果与严格解符合得很好, 而与计算工作量相当的重正化群方法相比, 精确度大为提高。 关键词：     

Matrix model in a class of time dependent supersymmetric backgrounds

We discuss the matrix model in a class of 11D time dependent supersymmetric backgrounds as obtained in [B. Chen, Phys. Lett. B 632 (2006) 393, hep-th/0508191]. We construct the matrix model action through the matrix regularization of the membrane action in the background. We show that the action is exact to all orders of fermionic coordinates. Furthermore we discuss the fuzzy sphere solutions in this background.     

A gas-kinetic scheme for shallow-water equations with source terms

In this paper, the Kinetic Flux Vector Splitting (KFVS) scheme is extended to solving the shallow water equations with source terms. To develop a well-balanced scheme between the source term and the flow convection, the source term effect is accounted in the flux evaluation across cell interfaces. This leads to a modified gas-kinetic scheme with particular application to the shallow water equations with bottom topography. Numerical experiments show better resolution of the unsteady solution than conventional finite difference method and KFVS method with little additional cost. Moreover, some positivity properties of the gas-kinetic scheme is established.