直流稳压电源波形演示器制作说明

直流稳压电源可以将交流电压变换为直流电压,并使之稳定,在我们现实生活中应用很广泛,在实验中我们利用的电学知识,设计制造了一种直流稳压电源。本文简要介绍了这种直流稳压电源波形演示器的设计目的和电路原理,重点阐述了它的制作流程、滤波和稳压原理以及性能测试输出波形。     

差分吸收光谱法测量大气污染的测量误差分析

差分吸收光谱技术被广泛地应用于测量大气中微量元素的浓度，尽管该技术利用最小二乘法来反演待测气体的浓度，能够得到很高的测量精度。但是，由于仪器本身的噪声以及测量波段其它气体的干扰等，使得仪器的测量有一定的误差，而且上述因素还决定着仪器的测量下限。对差分吸收光谱方法的测量误差以及引起误差的原因作了详细的分析。     

Time Evolution of Vibration-Induced Excited State Decay

A simple model consisting of two electronic levels and one vibrational mode (phonon) was theoretically studied. The electronic-vibrational interaction was linear in the vibrational displacement. The vibrational mode was taken in the harmonic approximation and was attached to the thermal bath formed by the ambient environment. The kinetic constants of the vibrational dissipation were of the second order in the vibrational-bath coupling and were taken in the Markovian limit. Although, depending on the parameters of the model, different curves of the non-radiative vibration-induced excited state decay were obtained, in general, three time intervals, corresponding to different physical behaviour, were found. In the short-time interval, small oscillations superimposed on the excited state decay were observed. They were determined by the vibrational frequency and influenced by electronic-vibrational coupling. In the middle-time interval, almost quasi-exponential decay was detected; its rate constant increased with stronger electronic-vibrational interaction and speed of vibrational relaxation. In the long-time interval, the decay was very slow and, under special conditions, even an asymptotic non-zero excited state population was observed. Its value increased with the strength of the off-diagonal electron-vibrational coupling. Links of the parameters of the model with quantum chemical terms were estimated.     

微光像增强器图像传递信噪比的测试研究

图像传递信噪比是微光像增强器的重要特性参数．能够全面定量地表征像增强器在探测弱辐射图像时的综合性能，对于确定像增强器的图像探测灵敏闽具有重要意义。针对其测试原理．采用高灵敏度低噪声CCD器件作为像管输出图像的探测接收器．并引入数字图像处理技术。利用设计的测试系统实现了典型目标图像传递信噪比的自动测试．多次实验结果表明．陔测试系统具有测试过程自动快速及测试数据准确稳定的优点．相同测试条件下的不确定度优于±3%。     

ROBUST GLOBAL EXPONENTIAL STABILITY OF UNCERTAIN IMPULSIVE SYSTEMS

By using the quasi-Lyapunov function, some sufficient conditions of global exponential stability for impulsive systems are established, which is the basis for the following discussion. Then, by employing Riccati inequality and Hamilton-Jacobi inequality approach, some sufficient conditions of robust exponential stability for uncertain linear/nonlinear impulsive systems are derived, respectively. Finally, some examples are given to illustrate the applications of the theory.     

非线性光纤环形镜的脉冲透过特性研究

研究了光纤反常色散区非线性环形镜（NOLM）的脉冲透过特性，得到NOLM周期性透过率函数 第一极大值处透过率、压缩比和对应的孤子阶数与环长之间的函数关系图.通过比较长环和 短环NOLM对无啁啾、啁啾脉冲的透过率和压缩比特性，得出了长环有利于脉冲整形而短环有 利于脉冲压缩的结论. 关键词： 非线性环形镜 透过率 压缩比 孤子阶数     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

具P-Laplacian算子型周期边值问题解的存在性

本文利用拓扑度理论和一些分析技巧讨论了具p—Laplacian算子型周期边值问题(φp(χ’))’+d/dt gradF(χ)+gradG(χ)=e(t),χ(0)=χ(T),χ’(0)=χ’(T)解的存在性,在对阻尼项d/dtgradF(χ)没有任何限制的前提下,给出了解存在的充分条件.     

Synthesis,structure, spectroscopic and magnetic properties of a novel two-dimensional copper(II) complex Na2[Cu(pba)] · 6H2O [pba = 1,3-propylenebis(oxamato)]

The copper(II) complex Na₂[Cu(pba)] · 6H₂O has been synthesized and its structure determined. It consists of a novel two-dimensional network of [Cu(pba)]^2– anions connected to each other through the sodium ion as a bridge. Spectroscopic and magnetic properties have been measured and a spin distribution calculation has been carried out with the GAUSSIAN-94. Theoretical calculations indicate the rather larger spin density on nitrogen atoms should be responsible for the satellite lines appearing beside the main hyperfine coupling signs of copper(II). The antiferromagnetic interaction may be due to the intermolecular interaction and/or different copper(II) ions through the Na⁺ bridge in the same layer.     

浮栅ROM器件辐射效应机理分析

分析了浮栅ROM器件的辐射效应机理，合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和⁶⁰Co γ辐射效应都是总剂量效应 . 关键词： FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">⁶⁰Co γ 总剂量效应