Liquid chromatography/electrospray ionization mass spectrometry for the characterization of twenty-three flavonoids in the extract of Dalbergia odorifera

A method incorporating high-performance liquid chromatography (HPLC) with electrospray ionization and tandem mass spectrometry, with parallel analysis by HPLC with UV detection using a diode-array detector, was developed for the qualitative characterization of flavonoids in D. odorifera. Twenty-three flavonoids, including six isoflavones, six neoflavones, four isoflavanones, three flavanones, two chalcones, one isoflavanonol and one pterocarpan, were unambiguously identified by comparing their retention times, UV and MS spectra with those of authentic compounds. Furthermore, the collision-induced dissociations of the [M-H]- ions were studied to clarify the MS behavior of the different types of flavonoids. In negative ion ESI-MS all the flavonoids yielded prominent [M-H]- ions in the first order mass spectra. Fragments involving losses of CH3*, H2O, CO, C2H2O, and CO2 were observed in the MS/MS spectra. Each of the seven types of flavonoid showed characteristic MS/MS fragmentation patterns. The isoflavanones, flavanones and chalcones were observed to undergo retro-Diels-Alder fragmentations. The spectra of almost all the neoflavonoids unexpectedly exhibited only [M-H-CH3]-* radical anions as base peaks without any further fragmentation. Substitution positions also remarkably influenced the fragmentation behavior, which could assist in distinction among the flavonoid isomers. The fragmentation rules deduced here could aid in the characterization of other flavonoids of these types.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

偶氮侧基聚合物光致异构动力学研究

本文对偶氮侧基聚合物相位共轭光时间特性进行了研究,得到了相位共扼光产生机制─光致异构过程的时间常数.在相位共轭光上升阶段,其时间常数在0.4～0.5s之间,在相让共轭光的衰减过程,衰减满足双指数关系,分段拟合得到较好的结果,且得到快过程的时间常数为0.27s,慢过程的时间常数为0.78s.     

Klein–Nishina Effect and the Cosmic Ray Electron Spectrum

Radiative energy losses are very important in regulating the cosmic ray electron and/or positron(CRE) spectrum during their propagation in the Milky Way. Particularly, the Klein–Nishina(KN) effect of the inverse Compton scattering(ICS) results in less efficient energy losses of high-energy electrons, which is expected to leave imprints on the propagated electron spectrum. It has been proposed that the hardening of CRE spectra around 50 GeV observed by Fermi-LAT, AMS-02, and DAMPE could be due to the KN effect. We show in this work that the transition from the Thomson regime to the KN regime of the ICS is actually quite smooth compared with the approximate treatment adopted in some previous works. As a result, the observed spectral hardening of CREs cannot be explained by the KN effect. It means that an additional hardening of the primary electrons spectrum is needed. We also provide a parameterized form for the accurate calculation of the ICS energy-loss rate in a wide energy range.     

微腔内气体抽离的多尺度模拟与分析

基于适用于整个克努森数范围的流动理论,建立了去除惯性约束聚变实验中靶丸内空气的理论模型,并设计实验验证了此模型的可靠性。物理实验要求靶丸内空气浓度低于10×10⁻⁶,数值模拟了去除靶丸内空气的过程,重点分析了靶丸内空气浓度、压力与除气时间的关系。计算并比较了单管路一次抽气法、单管路循环抽气法与双管路流洗法三种去除靶丸内空气方法的时间成本。数值计算结果表明：单管路一次抽气法中,靶丸上的微通道的存在对去除靶丸内空气所需时间的影响不可忽略,在考虑靶丸上微通道与充气管的情况下,需要1961.77 h才能使靶丸内的空气浓度达到标准。单管路循环抽气法中,抽气次数与单次抽气程度会影响去除靶丸内空气所需总时间,在单次抽气程度值取最优的情况下,采用充三次,抽四次的方案可使达标总时间减少至1 h左右,此方案下单次充气和抽气时间分别为6 min和10 min。而采用双管路流洗法则仅需11 min便可使靶丸内空气浓度达标。     

三氧化钨/氧化银复合材料的水热法合成及其光催化降解性能研究

染料污染是水污染中最严重的问题之一,吸引了很多科学家的关注.人们尝试了很多方法去解决该问题,如化学氧化法、物理吸附法、光催化降解法和生物降解法等.与其他几种方法相比,光催化法有着低能耗、环保以及高效等优势.三氧化钨是常见的半导体材料,具有独特的光学性能,近年来受到了广泛的研究.本文以钨酸钠和硫脲为前驱体,通过水热法制备了三氧化钨/氧化银(WO_3/Ag_2O)复合材料,并用光催化降解亚甲基蓝来分析其光催化性能.通过X射线光电子能谱、X射线衍射、透射电子显微镜、扫描电子显微镜、紫外可见吸收光谱等表征手段对样品的形貌、晶格结构和光催化的性能进行表征.氧化银的带宽为1.2 e V,对可见光很敏感,三氧化钨和氧化银的复合使材料在可见光下的光催化活性显著增强,在可见光下对亚甲基蓝染料的光降解率可以达到98%.实验结果表明,复合材料中的三氧化钨纳米棒为六方相,其平均直径约为200 nm,平均长度约为4μm.而复合材料中的氧化银纳米颗粒为六方相,附着在氧化钨纳米棒的表面,平均晶粒尺寸为20 nm.氧化银的存在为复合材料提供了更多的反应活性位点.相较于单一组分,复合材料在可见光下的光吸收度更高,这说明三氧化钨和氧化银的复合改变了材料的能带结构.研究发现,三氧化钨和氧化银之间形成的异质结构是其优良光催化性能的来源.此外,三氧化钨和氧化银复合材料还具有良好的催化稳定性和化学稳定性.本文结果表明,可以通过给宽带隙的半导体材料复合一些带隙合适的金属氧化物以提升其光催化活性.     

Mid-infrared generation based on a periodically poled LiNbO3 optical parametric oscillator

We report a nanosecond Nd:YVO_4-pumped optical parametric oscillator (OPO) based on periodically poled LiNbO_3 (PPLN). Tuning is achieved in this experiment by varying the temperature and period of the PPLN. The design of double-pass singly resonant oscillator (DSRO) and confocal cavity enables the OPO threshold to be lowered considerably, resulting in a simple, compact, all-solid-state configuration with the mid-infrared idler powers of up to 466mW at 3.41μm.     

双轴压缩下颗粒物质剪切带的形成与发展

本文采用离散元方法,研究了双轴压缩的颗粒体系在刚性边界约束下,局部剪切带的形成和发展过程,注重分析了细观的体积分数、配位数、颗粒旋转角度等参数以及力链结构形态的演变.并从颗粒体系jamming 相图中J点附近的边壁压强和配位数随体积分数的标度规律出发,分析了剪切带内外的体积分数和配位数的变化.结果表明:剪切带形成于颗粒体系的塑性变形开始阶段,此时体系发生剪胀,颗粒体积分数减小,颗粒体系抵抗旋转的能力降低,开始出现细小剪切带,随着轴向应变的继续,细小剪切带发生连接,最终导致贯穿性优势剪切带形成 关键词： 颗粒物质 力链 双轴压缩 剪切带     

Ruby fluorescence pressure scale： Revisited

Effect of non-hydrostatic stress on X-ray diffraction in a diamond anvil cell (DAC) is studied. The pressure gradient in the sample chamber leads to the broadening of the diffraction peaks, which increase with the hkl index of the crystal. It is found that the difference between the determined d-spacing compressive ratio d/d0 and the real d-spacing compressive ratio dr/d0 is determined by the yield stress of the pressure transmitting media (if used) and the shear modulus of the sample. On the basis of the corrected experiment data of Mao et al. (MXB86), which was used to calibrate the most widely used ruby fluorescence scale, a new relationship of ruby fluorescence pressure scale is corrected, i.e., P = (1904/9.827)[(1+λ/λ0)9.827-1].