Infrared-induced temperature distributions of solid D2 ices

A specific-wavelength infrared (IR) light (λ=3140 nm) was irradiated into a solid D₂ ice prepared in a cylinder target cell. The temperature in the solid D₂ ice oscillated periodically with a high amplitude when irradiated by the IR light. The temperature oscillation has been well explained based on the two-dimensional heat transfer theory plus the IR-irradiation effect. The transmission optical imaging reveals that such a temperature oscillation is favorable to recrystallize the solid D₂ ice from multicrystal to quasi single crystal. This suggests an efficient method to layer the solid hydrogen-isotope ice for the inertial-confinement-fusion (ICF) experiments.     

Poly[aqua[μ2‐1,4‐bis(imidazol‐1‐ylmethyl)benzene‐κ2N3:N3′](μ2‐5‐hydroxybenzene‐1,3‐dicarboxylato‐κ4O1,O1′:O3,O3′)cadmium(II)], a twofold interpenetrated CdSO4‐like metal–organic polymer

In the title cadmium(II) complex, [Cd(C₈H₄O₅)(C₁₄H₁₄N₄)(H₂O)]_n, the 5‐hydroxybenzene‐1,3‐dicarboxylate (5‐OH‐1,3‐bdc) and 1,4‐bis(imidazol‐1‐ylmethyl)benzene (1,4,‐bix) ligands bridge water‐coordinated Cd^II atoms to generate a three‐dimensional network. Two carboxylate groups from different ligands function as O,O′‐chelates, while two imidazole N atoms from different ligands coordinate in a monodentate fashion, and one water molecule completes the seven‐coordinate pentagonal bipyramid around the Cd^II atom, in which the N atoms occupy the axial sites and the O atoms occupy the equatorial sites. The overall architecture is a twofold interpenetrated CdSO₄‐type framework. The two crystallographically equivalent frameworks are linked by O—H...O hydrogen bonds between the water, hydroxy and carboxylate groups.     

Markov-modulated mean-variance problem for an insurer

In this paper, we consider an insurance company which has the option of investing in a risky asset and a risk-free asset, whose price parameters are driven by a finite state Markov chain. The risk process of the insurance company is modeled as a diffusion process whose diffusion and drift parameters switch over time according to the same Markov chain. We study the Markov-modulated mean-variance problem for the insurer and derive explicitly the closed form of the efficient strategy and efficient frontier. In the case of no regime switching, we can see that the efficient frontier in our paper coincides with that of [10] when there is no pure jump.     

Resource allocation and target setting for parallel production system based on DEA

The paper proposes methodology for resource allocation and target setting based on DEA (data envelopment analysis). It deals with organization can be modeled as consisting of several production units, each of which has parallel production lines. The previous studies in the DEA literature only deal with reallocating/allocating organizational resources to production units and set targets for them. In their researches, the production unit is treated as a black box. In such circumstances, how to arrange the production at production unit level is not clear. This paper serves to generate resource allocation and target setting plan for each production unit by opening the black box. The proposed model exploits production information of production lines in generating production plans. The resulting plan has following characteristics: (1) the performance of each production lines are evaluated under common weights; (2) the weights chose for evaluation keep the efficiency of the entire unit not worse off; (3) the worst behaved production line in the production unit under evaluation are improved as much as possible. Finally, the real data of a production system extracted from extant literature are used to demonstrate the proposed method.     

热激法光子晶体光纤光栅制备工艺中热传导特性研究

研究了基于结构性改变的光子晶体光纤光栅的热激法制备工艺,理论分析了此种工艺的成栅原理,采用热传导理论和有限元法研究了制备过程中光子晶体光纤中的温度场分布,以及包层空气孔结构和激光参数对成栅效果的影响.研究结果表明,利用光子晶体光纤包层空气孔周期性塌缩可以形成光栅;采用两点热激法时,能够实现能量在光纤径向均匀分布,轴向近似于高斯分布;包层气孔结构加速了成栅过程,相同光斑尺寸下,光纤塌缩所需激光功率随气孔层数和气孔半径的增大而减小;最后,对包层空气孔结构为1层到7层的光子晶体光纤热激过程进行仿真,得到了空气填 关键词： 光纤光栅 光子晶体光纤 热激法 有限元法     

The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure

Applied Physics A - This is a theoretical study of the 1st AlN interlayer and the 2nd GaN layer on properties of the Al0.3Ga0.7N/2nd AlN/2nd GaN/1st AlN/1st GaN HEMT structure by self-consistently...     

Structural characteristics of nanocrystalline copper after carbon ion implantation

A gradient structure was produced in a pure copper plate by means of surface mechanical attrition treatment (SMAT). The microstructure of the surface layer was reduced to nanoscale and the grain size increased gradually along the depth of the treated sample. In situ transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) observation was performed on the nanocrystalline copper after implantation of carbon. Carbon atoms first precipitated along the edges of the copper substrate or at the surface, then formed amorphous carbon layers. Subsequently, onion-like fullerenes were formed under electron-beam irradiation. The effects of ion implantation, electron beam irradiation, nanostructure of the substrate and interaction of C and Cu atoms on the formation of the onion-like fullerenes are discussed.     

银岛膜表面胸腺嘧啶吸附行为的表面增强拉曼光谱和表面增强红外光谱研究

利用激光刻蚀法制备了具有化学纯净表面的银岛膜,该岛膜有很好的表面增强特性。利用表面增强拉曼光谱和表面增强红外光谱对胸腺嘧啶分子在银岛膜表面的吸附状态进行了对比研究。表面增强拉曼光谱中CN和C—O伸缩振动模式的出现表明胸腺嘧啶分子由原来的酮式结构变成了烯醇式结构;C(4)O伸缩振动谱带明显增强和N(3)的去质子化异构体特征峰的存在证明胸腺嘧啶分子是通过O(8)和N(3)的共同作用倾斜地吸附在银岛膜表面。对10-5 mol.L-1胸腺嘧啶在银岛膜表面上的红外光谱利用欧米采样器进行了反射法测量,发现其红外吸收增强了200倍。红外信号分析的结果支持了胸腺嘧啶分子通过O(8)与银表面发生相互作用的论断,同时也可得出胸腺嘧啶倾斜地吸附在银岛膜表面的结论。     

长脉冲激光对组成CCD图像传感器的MOS光敏单元的硬破坏机理研究

以帧转移型面阵CCD图像传感器为例,采用有限元法研究了波长1.06 μm,脉宽ms量级长脉冲Nd:YAG激光与组成CCD传感器的MOS光敏单元的作用过程及硬破坏机理.建立了长脉冲激光辐照MOS光敏单元的热力耦合模型,模拟了MOS光敏单元的温度分布和应力分布.研究结果表明:在长脉冲激光作用下,由于S层表面径向压应力超过其抗压强度引起MOS光敏单元出现了OS层间分裂,进而受径向、环向和轴向压应力的共同作用下,在光敏单元还未熔融时,层间分裂就扩大至光敏单元的整个OS层间.OS层间完全分裂会使光敏单元发生硬破坏,并造成CCD传感器中激光照射区的单个或一列光敏单元的功能完全失效.文章的研究结果可为CCD图像传感器的激光损伤及防护提供必要的理论依据. 关键词： 长脉冲激光 CCD图像传感器 硬破坏机理 层间分裂     

0.18 μm MOSFET器件的总剂量辐照效应

对0.18 μm metal-oxide-semiconductor field-effect-transistor (MOSFET)器件进行γ射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应. 通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好. 深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素. 关键词： 总剂量效应 浅沟槽隔离 氧化层陷阱正电荷 MOSFET