Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

800A高温超导电流引线的研制

介绍了800A双磁体高温超导(HTS)电流引线的结构、设计参数及制做过程,论述了其加工、组装、实验及调试结果,进而验证该设计方案较为合理地满足双磁体运行要求。     

VLW状态方程的回顾与展望

 回顾了VLW状态方程建立的背景,阐述了它问世十余年后,该状态方程中的第三项从理论上得到证明的事实,并对今后的发展进行了展望。     

ZnO/p-Si异质结的深能级及其对发光的影响

利用深能级瞬态谱(DLTS)和光致发光谱(PL),研究了ZnO/pSi异质结的两种不同温度(850℃,1000℃)退火下的深能级中心。发现850℃退火的样品存在3个明显的深中心,分别为E₁=E_v+0.21eV,E₂=E_v+0.44eV,E₃=E_v+071eV;而1000℃退火样品仅存在一个E₁=E_v+021eV的中心,且其隙态密度要比850℃退火的大。同时,测量了两个样品的PL谱。发现1000℃退火可消除一些影响发光强度的深能级,对改善晶格结构,提高样品的发光强度有利。     

丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

利用法布里-珀罗腔抑制电光相位调制中的剩余幅度调制

激光经电光相位调制后,由于剩余幅度调制的存在造成调制边带幅度不相等。利用法布里-珀罗腔的透射特性和Pound-Drever-Hall技术对通过法布里-珀罗腔的调制光正、负一级边带的幅度产生不同的衰减,使得调制边带的幅度相等,从而实现对电光相位调制中剩余幅度调制的抑制。采用该方法,理论上计算了调制光经法布里-珀罗腔后的光外差光谱信号,获得锁定法布里-珀罗腔后调制边带幅度的不对称度较腔锁定前减小四个数量级。实验研究了调制光经法布里-珀罗腔透射的光外差光谱,结果表明将法布里-珀罗腔锁定于该透射光外差光谱中心零位时,对剩余幅度调制的抑制程度可达45 dB。     

偶氮侧基聚合物光致异构动力学研究

本文对偶氮侧基聚合物相位共轭光时间特性进行了研究,得到了相位共扼光产生机制─光致异构过程的时间常数.在相位共轭光上升阶段,其时间常数在0.4～0.5s之间,在相让共轭光的衰减过程,衰减满足双指数关系,分段拟合得到较好的结果,且得到快过程的时间常数为0.27s,慢过程的时间常数为0.78s.     

Cu掺杂的AlN铁磁性和光学性质的第一性原理研究

采用基于密度泛函理论（DFT）的总体能量平面波超软赝势方法,结合广义梯度近似（GGA）,对Cu掺杂AlN 32原子超原胞体系进行了几何结构优化,计算了Cu掺杂AlN的晶格常数,能带结构,电子态密度和光学性质.结果表明,Cu掺杂AlN会产生自旋极化状态,能带结构显示半金属性质,掺杂后带隙变窄,长波吸收加强,能量损失明显减小.同传统的稀磁半导体（DMS）相比,Cu掺杂AlN不会有铁磁性沉淀物的问题,因为Cu本身不具有磁性.因而,Cu掺杂的AlN也许是一种非常有前途的稀磁半导体. 关键词： AlN 第一性原理 铁磁性 光学性质     

非线性耗散对亚稳态系统量子衰变速率的影响

发展了一种快速傅里叶变换路径积分方法，研究非线性耗散系统的量子衰变速率，得到了Bounce轨道的作用量S_B，即衰变速率的指数因子.在系统与环境存在非线性耦合f(x)=tanh［λ(x-x_b)］的情形下，发现其对衰变速率具有抑制作用.指数因子随温度T的关系不再满足S_B=a［1-b(T/T_c)²］法则；与通常的线性耗散情形相比，跨越温度T_c回升，即系统更早地进入穿透区域. 关键词： 量子衰变 非线性耦合 路径积分 快速傅里叶变换     

Klein–Nishina Effect and the Cosmic Ray Electron Spectrum

Radiative energy losses are very important in regulating the cosmic ray electron and/or positron(CRE) spectrum during their propagation in the Milky Way. Particularly, the Klein–Nishina(KN) effect of the inverse Compton scattering(ICS) results in less efficient energy losses of high-energy electrons, which is expected to leave imprints on the propagated electron spectrum. It has been proposed that the hardening of CRE spectra around 50 GeV observed by Fermi-LAT, AMS-02, and DAMPE could be due to the KN effect. We show in this work that the transition from the Thomson regime to the KN regime of the ICS is actually quite smooth compared with the approximate treatment adopted in some previous works. As a result, the observed spectral hardening of CREs cannot be explained by the KN effect. It means that an additional hardening of the primary electrons spectrum is needed. We also provide a parameterized form for the accurate calculation of the ICS energy-loss rate in a wide energy range.