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71.
The ternary glasses of arsenic and germanium with antimony and selenium can be prepared in large sizes for optical purposes. The elastic behaviour of eight compositions of each glass has been studied down to 4.2 K using a 10 MHz ultrasonic pulse echo interferometer. The glasses have a normal elastic behaviour, with the velocities gradually increasing as the temperature is lowered. An anharmonic solid model of Lakkad satisfactorily explains the temperature variations. The elastic moduli of Ge x Sb10Se90?x glasses increase linearly as the Ge content is increased up to 25 at. % and beyond this the increase is nonlinear. (AsSb)40Se60 glasses show a linear increase in elastic moduli with increasing Sb content. The elastic moduli of As x Sb15Se85?x glasses exhibit a drastic change near the stoichiometric composition As25Sb15Se60. These behaviours have been qualitatively explained on the basis of the structural changes in glasses. 相似文献
72.
G. Ranga Rao H. Ranjan Sahu Braja Gopal Mishra 《Colloids and surfaces. A, Physicochemical and engineering aspects》2003,220(1-3):261-269
Surface and catalytic properties of Cu–Ce–O composite materials prepared by solution combustion method have been investigated. The materials are characterized by X-ray diffraction (XRD), temperature programmed reduction (TPR) and electron paramagnetic resonance spectroscopy (EPR). The results of EPR and TPR show finely dispersed Cu2+ species on ceria matrix with low copper content. The Cu2+ species exists in the form of dimers and clusters which are not evident in XRD. In addition CuO is also present as small clusters which grow to larger size at higher Cu content. There is no evidence of CuO forming a solid solution with fluorite CeO2 in combustion method. The Cu2+ species mostly appear on surface rather than in the bulk. Hydrogen peroxide decomposition kinetics has been carried out on Cu–Ce–O composite materials to investigate the effect of crystalline and well-dispersed copper oxide phases on CeO2. From kinetic results, the catalyst materials can be grouped into highly dispersed as well as crystalline CuO phases present on CeO2 matrix. Two parallel compensating lines for dispersed and crystalline CuO phases on CeO2 are observed in ln A versus Ea plot indicating the compensation effect in H2O2 decomposition. This observation is consistent with XRD and EPR results. 相似文献
73.
S. Gopal C. Viswanathan M. Thamilselvan K. Premnazeer Sa. K. Narayandass D. Mangalaraj 《Ionics》2004,10(3-4):300-303
Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass substrates from a mixture of Indium
trichloride (InCl3) and selenium dioxide (SeO2) in aqueous solution by the potentiostatic electrodeposition technique. The InSe films showed that Mott’s variable-range
hopping conductivity (VRH) is dominant under low field (∼2×105 Vcm−1) condition. At high field the Current-Voltage studies (in the temperature range 300 – 380 K) revealed that the conductivity
of Indium selenide thin films is of Poole-Frenkel type. The plot drawn between Ln (I/V) and tV showed a straight line and
also the experimental data and the theoretical data closely matches. Hence Poole-Frenkel mechanism is confirmed and discussed
in detail.
Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003. 相似文献
74.
75.
The elastic constantsC
11,C
12 andC
44 of sodium chlorate single crystal have been evaluated using 10 MHz ultrasonic pulse echo superposition technique. The values
areC
11=4.90,C
12=1.39,C
44=1.17 (× 1010
N/m
2) at 298 K and 6.15, 2.16, 1.32 (×1010
N/m
2) at 77 K. The data agree well with the values measured earlier up to 223 K. Brief mention is also made of the low temperature
bonding problems in these soft crystals. 相似文献
76.
77.
The electrical resistivity of bulk Ge20Te80 has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition
has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic
structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa.
The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K. 相似文献
78.
Vadapalli Chandrasekhar Kandasamy Gopal Loganathan Nagarajan Palani Sasikumar Pakkirisamy Thilagar 《Journal of Chemical Sciences》2006,118(6):455-462
Phosphonate ligands, [RPO3]2-, are extremely versatile in the assembly of multi-tin and multi-copper architectures. We have used organostannoxane cores
for supporting multi-ferrocene and multi-porphyrin peripheries. The copper-metalated multi-porphyrin compound is an excellent
reagent for facile cleavage of DNA, even in the absence of a co-oxidant. Reaction oft-BuPO3H2 with Cu(C104)2. 6H2O in the presence of 2-pyridylpyrazole (2-Pypz) leads to the synthesis of a decanuclear copper (II) assembly. 相似文献
79.
The elastic constants of single crystal galena have been determined from the measured ultrasonic velocities down to liquid
helium temperature. A cryostat incorporating an arrangement to inject the liquid bonding material at low temperature is described.
At 5 K, the values of elastic constants are C11=14.90, C12=3.51 and C44=2.92×1010 N/m2. 相似文献
80.
K.L. Bhatia G. Parthasarathy E.S.R. Gopal A.K. Sharma 《Solid State Communications》1984,51(9):739-742
An investigation of the problem of controlled doping of amorphous chalcogenide semiconductors utilizing a Bridgman anvil high pressure technique, has been undertaken. Bulk amorphous semiconducting materials (GeSe3.5)100-x doped with M = Bi (x = 2, 4, 10) and M = Sb (x = 10) respectively are studied up to a pressure of 100 kbar down to liquid nitrogen temperature, with a view to observe the impurity induced modifications. Measurement of the electrical conductivity of the doped samples under quasi-hydrostatic pressure reveals that the pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x = 4, 10) semiconductors are markedly different. The pressure effects in Sb-doped semiconductors are quite different from those in Bi-doped material. 相似文献