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991.
This paper presents an asymmetric multimode interference-based (MMI) optical isolator, by utilizing the magneto-optical nonreciprocal phase shift (NPS). Equivalent beam propagation method (BPM) simulation of symmetric and asymmetric isolators are performed using configuration of Air/Ce:YIG/SiO2 on silicon substrate for integration. The asymmetric isolator is found to be much more compact in size and efficient in isolation compared with symmetric isolator. Simulation results show that the isolation of asymmetric structure is 23.8 dB higher than that of symmetric one. It is mainly because both symmetric mode and anti-symmetric mode are excited in asymmetric structure and hence can interfere destructively. The proposed device may play an important role in the optical communication systems and photonic integrated devices.  相似文献   
992.
A multiparty quantum secret sharing scheme based on Bell measurement is proposed and analyzed. In this scheme, all agents are not required to prepare entangled states or perform any local unitary operation. The security of the protocol is also analyzed. It is shown that any eavesdropper will introduce errors invariably and be detected if he tries to steal information about Trent’s secret. Moreover, because no classical bit needs to be transmitted except those for detection, the total efficiency of the scheme approaches to 100%.  相似文献   
993.
A new cryptology in dual fractional Fourier-wavelet domain is proposed in this paper, which is calculated by discrete fractional Fourier transform and wavelet decomposition. Different random phases are used in different wavelet subbands in encryption. A new color image encoding method is also presented with basic color decomposition and encryption respectively. All the keys, including random phases and fractional orders in R, G and B three channels, should be correctly used in decryption, otherwise people cannot obtain the totally correct information. Some numerical simulations are presented to demonstrate the possibility of the method. It would have widely potential applications in digital color image processing and protection.  相似文献   
994.
If the incident angle of a light beam on the boundary surface between the thin metal film of a surface plasmon resonance (SPR) apparatus and a test medium is equal to or very near the resonant angle, then the phase difference between the p- and s-polarizations of the reflected light is related to the associated physical parameter. The phase difference can be measured accurately with heterodyne interferometry. If the relationship between the phase difference and the associated physical parameter is specified, then the associated physical parameter can be estimated from the phase difference data. This method has the benefits of both common-path interferometry and heterodyne interferometry, such as simple structure, high stability, high resolution, easy operation, and rapid real-time measurement.  相似文献   
995.
This paper presents the latest development of a lead-free piezoelectric ceramic and its application to transducers suitable for high-frequency ultrasonic imaging. A lead-free piezoelectric ceramic with formula of (K0.5Na0.5)0.97Li0.03(Nb0.9 Ta0.1)O3 (abbreviated as KNLNT-0.03/0.10) was fabricated and characterized. The material was found to have a clamped dielectric constant ε33S/ε0 = 890, piezoelectric coefficient d33 = 245 pC/N, electromechanical coupling factor kt = 0.42 and Curie temperature Tc > 300 °C. High-frequency (40 MHz) ultrasound transducers were successfully fabricated with the lead-free material. A representative lead-free transducer had a bandwidth of 45%, two-way insertion loss of -18 dB. This performance is comparable to reported performances of popular lead-based transducers. The comparison results suggest that the lead-free piezoelectric material may serve as an alternative to lead-based piezoelectric materials for high-frequency ultrasonic transducer applications.  相似文献   
996.
Titanium films were deposited on glass substrates at room temperature by direct current (dc) magnetron sputtering at fixed Ar pressure of 1.7 Pa and sputtering time of 4 min with different sputtering power ranging from 100 to 300 W. Atomic force microscopy (AFM) was used to study topographic characteristics of the films, including crystalline feature, grain size, clustering and roughening. The amorphous-like microstructure feature has been observed at 100-150 W and the transition of crystal microstructure from amorphous-like to crystalline state occurs at 200 W. The increase in grain size of Ti films with the sputtering power (from 200 to 300 W) has been confirmed by AFM characterization. In addition, higher sputtering power (300 W) leads to the transformation of crystal texture from globular-like to hexagonal type. The study has shown that higher sputtering power results in the non-linear increase in deposition rate of Ti films. Good correlativity between the surface roughness parameters including root mean square (RMS) roughness, surface mean height (Ra) and maximum peak to valley height (P-V) for evaluating the lateral feature of the films has been manifested. Surface roughness has an increasing trend at 100-250 W, and then drops up to 300 W.  相似文献   
997.
The α-Cr2O3 single-crystal nanocondensates were fabricated by pulsed laser ablation in air and characterized by analytical electron microscopy regarding shape-dependent local internal stress of the anisotropic crystal. The nanocondensates formed predominantly as rhombohedra with well-developed surfaces and occasionally hexagonal plate with thin edges and blunt corners. Such nanocondensates showed Raman shift for the CrO6 polyhedra, indicating a local compressive stress up to ca. 4 GPa on the average. Careful analysis of the lattice fringes revealed a local compressive stress (0.5% strain) at the thin edge of the hexagonal plates and a local tensile stress (0.3–1.0% strain) near the relaxed , , and (0 0 0 1) surfaces of truncated rhombohedra. The combined effects of nanosize, capillarity force at sharp edge, and specific surface relaxation account for the retention of a local internal compressive stress built up in an anisotropic crystal during a very rapid heating–cooling process.  相似文献   
998.
We report diode end-pumped continuous-wave Tm:YAlO3 slab lasers with high power and high efficiency. At room temperature, b-cut Tm:YAlO3 slabs with doping concentrations of 1, 4 and 5 at.% pumped by fiber-coupled and fast-axis collimated laser diodes with different wavelengths are compared. Tm:YAlO3 slab lasers of 4 at.% doping concentrations have the highest optical-to-optical efficiency. When pumped with fiber-coupled and fast-axis collimated laser diodes, the maximum output powers are 11 W and 15 W, corresponding to a slope efficiency of 52% and 40%, respectively.  相似文献   
999.
Effect of the evolution of the secondary phases in the first sintering process on the microstructure and critical current density of Bi-2223/Ag tapes has been studied. The amount and grain size of secondary phases were characterized by XRD and SEM/EDS. It has been found that both the microstructure and critical current of the fully reacted tapes depended strongly on the secondary phases formed in the first sintering process. The (Ca,Sr)2CuO3 and (Ca,Sr)14Cu24O41 phases were easily formed and to be stable at higher temperature, however, at lower temperature, the CuO particles appeared easily and keeping stable with dwelling time. The best conversion to Bi-2223, together with the lowest amount of the total secondary phases was achieved when samples treated at 830 °C in 8.5% O2. Samples with the lowest amount and minimum size of secondary phase produced in the first sintering process will obtain the best performance of the fully reacted tapes. The optimum sintering parameters are obtained by controlling the evolution of the secondary phases during the first sintering process.  相似文献   
1000.
(Gd,Y)Ba2Cu3Ox tapes have been fabricated by metal organic chemical vapor deposition (MOCVD) with Zr-doping levels of 0–15 mol.% and Ce doping levels of 0–10 mol.% in 0.4 μm thick films. The critical current density (Jc) of Zr-doped samples at 77 K, 1 T applied in the orientation of H 6 c is found to increase with Zr content and shows a maximum at 7.5% Zr doping. The 7.5% Zr-doped sample exhibits a critical current density (Jc) of 0.95 MA/cm2 at H 6 c which is more than 70% higher than the Jc of the undoped sample. The peak in Jc at H 6 c is 83% of that at H 6 ab in the 7.5% Zr-doped sample which is more than twice as that in the undoped sample. Superconducting transition temperature (Tc) values as high as about 89 K have been achieved in samples even with 15% Zr and 10% Ce. Ce-doped samples with and without Ba compensation are found to exhibit substantially different Jc values as well as angular dependence characteristics.  相似文献   
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