Comparison of optical and structural properties of nanostructure TiO2 thin film doped by Sn and Nb

The thin films of TiO₂ doped by Sn or Nb were prepared by sol–gel method under process control. The effects of Sn and Nb doping on the structural, optical and photo-catalytic properties of applied thin films have been studied by X-ray diffraction (XRD) high resolution transmission electron microscopy and UV–Vis absorption spectroscopy. Surface chemical state of thin films was examined by atomic X-ray photoelectron spectroscopy. XRD results suggest that adding impurities has a great effect on the crystallinity and particle size of TiO₂. Titania rutile phase formation in thin film was promoted by Sn⁴⁺ addition but was inhibited by Nb⁵⁺ doping. The activity of the photocatalyst was evaluated by photocatalytic degradation kinetics of aqueous methylene blue under UV and Visible radiation. The results show that the photocatalytic activity of the Sn-doped TiO₂ thin film have a larger degradation efficiency than Nb-doped TiO₂ under visible light, but under UV light photocatalytic activity of the Nb-doped TiO₂ thin film is better.     

Effects of an electric field on the electronic and optical properties of zigzag boron nitride nanotubes

We have investigated the electro-optical properties of zigzag BNNTs, under an external electric field, using the tight binding approximation. It is found that an electric field modifies the band structure and splits the band degeneracy. Also the large electric strength leads to coupling the neighbor subbands which these effects reflect in the DOS and JDOS spectrum. It has been shown that, unlike CNTs, the band gap of BNNTs can be reduced linearly by applying a transverse external electric field. Also we show that the larger diameter tubes are more sensitive than small ones. The semiconducting metallic transition can be achieved through increasing the applied fields. The number and position of peaks in the JDOS spectrum are dependent on electric field strength. It is found that at a high electric field, the two lowest subbands are oscillatory with multiple nodes at the Fermi level.     

Activation energy and conductivity of glasses in the P2O5–V2O5–Li2O system

The conductivity of glasses in the 50\textP_\text2 \textO_\text5 - x\textV_\text2 \textO_\text5 - ( 50 - x )\textLi_\text2 \textO50{\text{P}}_{\text{2}} {\text{O}}_{\text{5}} - x{\text{V}}_{\text{2}} {\text{O}}_{\text{5}} - \left( {50 - x} \right){\text{Li}}_{\text{2}} {\text{O}} system was studied as a function of temperature and composition. For all compositions, the conductivity variation as a function of temperature followed an Arrhenius type relationship. Isothermal variation of conductivity as a function of composition showed a minimum for a molar ratio x near 20. Probable mechanisms for decrease of conductivity with decrease of vanadium oxide concentration were explained. The minimum in room temperature was attributed to increase of V⁴⁺/V⁵⁺ with decrease of vanadium oxide in specific concentrations of vanadium oxide. Activation energy increased with decrease of V₂O₅ content. This behavior was attributed to increase of average spacing between vanadium ions.     

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.