Hysteresis and Eddy-current Relaxation in SiFe Materials

The rate-dependent effects in metallic ferromagnetic materials with magnetization processes attributed to domain-walls motion were studied. The experimental method for eddy-current relaxation time determination was proposed. Some discrepancies between the data and theoretical predictions were observed and discussed. The origin of these discrepancies is accounted for by the decrease of viscous-type relaxation process as the rate of change of averaged magnetization is approaching zero.     

Evaluation of closed-vessel microwave digestion method for the determination of trace impurities in polymer-based photoresist by inductively coupled plasma mass spectrometry

A closed microwave digestion method followed by inductively coupled plasma spectrometric (ICP-MS) analysis was evaluated for the determination of trace impurities in photoresist. To optimize the digestion procedure, several digestion parameters such as acid, heating temperature and heating time were evaluated. Besides, the digestion efficiency of used photoresist material and the recovery of analyte elements obtained by the use of gravimetric method and ICP-MS measurement, individually, were also compared to clarify the completeness of digestion. According to our experiments, the gravimetric method was found to be not so relevant to the completeness of digestion, because the remaining sample matrix could cause suppression effect in the subsequent ICP-MS measurement. In view of minimizing blank value and working time, a simple single-step heating program was proposed to mineralize 0.25 ml of photoresist material with 5 ml of nitric acid at 180 °C for 10 min. Based on the comparative study of the analytical results obtained by instrumental neutron activation analysis (INAA) and proposed method, the reliability of proposed method for the determination of trace metallic impurities in photoresist material has been confirmed.     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

Effect of genesis on the properties and hydrogen reducibility of NiO-ZnO mixed oxides

The physico-chemical properties and reactivity tested by hydrogen reduction have been studied for two series of NiO-ZnO mixed oxides of various composition. The solid nickel oxide or zinc oxide in interaction with the solution of nitrate of the second component were used as the precursors in each series. The differences in some physico-chemical parameters of the samples in both series were correlated with their reduction behaviour, followed both in iso- and non-isothermal regime. Moreower, the influence of various factors modifying the reactivity of mixed oxides was also investigated and the results were compared with those obtained from earlier studied analogous systems of quite different origin.This revised version was published online in November 2005 with corrections to the Cover Date.     

On the vector field problem for O(n)/O(1)xO(1)xO(n-2)

We prove new results about the vector field problem on the real flag manifolds O(n)/O(1) x O(1) x O(n - 2). For some infinite families of these manifolds, we completely solve the vector field problem.     

Division and <Emphasis Type="Italic">k</Emphasis>-th root theorems for <Emphasis Type="Italic">Q</Emphasis>-manifolds

We prove that a locally compact ANR-space X is a Q-manifold if and only if it has the Disjoint Disk Property (DDP), all points of X are homological Z _∞-points and X has the countable-dimensional approximation property (cd-AP), which means that each map f: K → X of a compact polyhedron can be approximated by a map with the countable-dimensional image. As an application we prove that a space X with DDP and cd-AP is a Q-manifold if some finite power of X is a Q-manifold. If some finite power of a space X with cd-AP is a Q-manifold, then X ² and X × [0, 1] are Q-manifolds as well. We construct a countable family χ of spaces with DDP and cd-AP such that no space X ∈ χ is homeomorphic to the Hilbert cube Q whereas the product X × Y of any different spaces X, Y ∈ χ is homeomorphic to Q. We also show that no uncountable family χ with such properties exists. This work was supported by the Slovenian-Ukrainian (Grant No. SLO-UKR 04-06/07)     

Algorithms for ham-sandwich cuts

Given disjoint setsP ₁,P ₂, ...,P _d inR ^d withn points in total, ahamsandwich cut is a hyperplane that simultaneously bisects theP _i . We present algorithms for finding ham-sandwich cuts in every dimensiond>1. Whend=2, the algorithm is optimal, having complexityO(n). For dimensiond>2, the bound on the running time is proportional to the worst-case time needed for constructing a level in an arrangement ofn hyperplanes in dimensiond−1. This, in turn, is related to the number ofk-sets inR ^d−1 . With the current estimates, we get complexity close toO(n ^3/2 ) ford=3, roughlyO(n ^8/3 ) ford=4, andO(n ^d−1−a(d) ) for somea(d)>0 (going to zero asd increases) for largerd. We also give a linear-time algorithm for ham-sandwich cuts inR ³ when the three sets are suitably separated. A preliminary version of the results of this paper appeared in [16] and [17]. Part of this research by J. Matoušek was done while he was visiting the School of Mathematics, Georgia Institute of Technology, Atlanta, and part of his work on this paper was supported by a Humboldt Research Fellowship. W. Steiger expresses gratitude to the NSF DIMACS Center at Rutgers, and his research was supported in part by NSF Grants CCR-8902522 and CCR-9111491.     

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.     

On the structure of stationary sets

We isolate several classes of stationary sets of [k]ωand investigate implications among them. Under a large cardinal assumption, we prove a structure theorem for stationary sets.