Tungsten microcone arrays grown using nanosecond pulsed-Nd:YAG laser in a low-pressure He-gas atmosphere

Tungsten microcone arrays with a high aspect ratio are formed by the cumulative nanosecond pulsed-Nd:YAG laser irradiation of single-crystal tungsten under low pressure in an inert atmosphere. The morphology of the microcones and their density were strongly affected by the number of laser pulses. The microcones grew to a length of 20 μm with a diameter of about 1.5 μm at the tip after irradiation with more than 1200 pulses under our experimental conditions. They may have potential applications for emission cathodes in a field-emission display (FED) and in microelectronic devices. Received: 8 January 2001 / Accepted: 13 June 2001 / Published online: 2 October 2001     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

Laser induced copper electroless plating on polyimide with Q-switch Nd:YAG laser

The results of laser induced deposition of copper on polyimide substrate from copper electrolyte solution are reported. Unlike most work reported in the literatures where CW Ar⁺ lasers were used, a second harmonic (532 nm wavelength) Q-switch Nd:YAG laser was used for our experiments. The deposition process was conducted by laser-catalyzing of the polyimide surface and subsequent photothermal-accelerated reduction of copper-complex ions in an alkaline reducing environment. The characteristics of the deposited copper line were investigated in terms of laser beam scanning speed, and the number of scans. The surface morphology and chemical composition of the deposited copper were analyzed using field emission scanning electron microscope (FESEM) and energy dispersive spectrometer (EDX). The optimum processing conditions have been identified. The copper deposit was found to adhere well to the substrate.     

STM/AFM studies of the evolution of morphology of electroplated Ni/W alloys

The surface morphology evolution of Ni/W alloys was studied, as a function of the alloy composition. Using the modified plating baths developed in our laboratory recently, electroplated Ni/W alloys with different W content, in the range of 7–67 atom percent (a/o), can be obtained. This was found to lead to different structures, ranging from polycrystalline fcc-Ni type structure to amorphous, followed by orthorhombic with increasing W content in the alloy. Powder XRD was studied to determine the crystal structures. Ex situ STM, AFM and SEM were used to study in detail the surface morphologies of the different alloys, and their evolution with increasing W content.

The important findings are that a mixture of two crystalline forms can give rise to an amorphous structure. Hillocks that are usually a characteristic of epitaxial growth can also exist in the amorphous alloys. Oriented scratches caused by stress can also be formed.

Up to 20 a/o of W is deposited in the alloys in crystalline form, with the fcc-Ni type structure. Between 20 and about 40 a/o an amorphous structure is observed, and above that an orthorhombic crystal structure is seen, which is characteristic of the NiW binary alloy. Careful choice of the composition of the plating bath allowed us to deposit an alloy containing 67 a/o W, which corresponds to the composition NiW₂.     

Wavelength and power monitoring of DWDM systems using scanning F–P filter calibrated with a F–P laser

A novel technique to overcome the long-term drift and hysteresis of a scanning Fabry–Perot filter was developed and applied to wavelength and power monitoring of DWDM system. By using the comb peaks generated by a temperature-stabilized, near threshold-biased Fabry–Perot diode laser as wavelength reference for the scanning Fabry–Perot filter, wavelength and power measurement accuracy of better than ±10 pm and 0.2 dB, respectively, were achieved.     

Carbon solubility and superconductivity in MgB2

Successful replacement of B by C in the series MgB_2−xC_x for values of x upto 0.3 is reported. Resistivity and ac susceptibility measurements have been carried out in the samples. Solubility of carbon, inferred from the observed change in the lattice parameter with carbon content indicates that carbon substitutes upto x=0.30 into the MgB₂ lattice. The superconducting transition temperature, T_c measured both by zero resistivity and the onset of the diamagnetic signal shows a systematic decrease with increase in carbon content upto x=0.30, beyond which the volume fraction decreases drastically. The temperature dependence of resistivity in the normal state fits to the Bloch–Gruneisen formula for all the carbon compositions studied. The Debye temperature, θ_D, extracted from the fit, is seen to decrease with carbon content from 900 to 525 K, whereas the electron–phonon interaction parameter, λ, obtained from the McMillan equation using the measured T_c and θ_D, is seen to increase monotonically from 0.8 in MgB₂ to 0.9 in the x=0.50 sample. The ratio of the resistivities between 300 and 40 K versus T_c is seen to follow the Testardi correlation for the C substituted samples. The decrease in T_c is argued to mainly arise due to large decrease in θ_D with C concentration and a decrease in the hole density of states at N(E_F).     

硅桥红外辐射单元温度的显微拉曼测定

本文采用显微拉曼光谱实验的方法对红外目标模拟器中的重掺杂Si电阻微桥单元进行了绝对温度的测量 ,并根据斯托克斯与反斯托克斯强度与温度关系以及Raman峰位移动与温度依赖关系两种方法确定温度 ,保证了所测温度的可靠性。针对Si桥建立相应的Raman模型 ,选择合适的物理参数 ,最终得到了反映Si桥工作特性的电流 -温度关系。此外 ,通过对Si桥的空间分辨的测量实验 ,得到了Si桥上的温度分布状况 ,对了解其电阻、热导及氧化等特性十分有用。所有结果表明该方法是器件优化的有效途径。     

N_2和O_2纯转动拉曼光谱(PRRS)的温度特性

计算了N2 和O2 的PRRS ,讨论了其温度特性。提出通过测量N2 和O2 的PRRS计算大气温度的方法。     

169Re的转动带结构研究

利用在束γ谱学方法,通过反应¹⁴⁴Sm(²⁸Si,1p3n)¹⁶⁹Re研究了¹⁶⁹Re的激发态能级结构.实验进行了X-γ符合、γ-γ符合、DCO系数和带内B(M1)/B(E2)比率测量.基于这些测量,建立了组态为π9/2^－[514]的强耦合带和组态为π1/2^－[541]的退耦合带.通过比较¹⁶⁹Re的转动带与邻近奇质子核已知转动带的结构和B(M1)/B(E2)比率,指定了¹⁶⁹Re转动带的组态.实验观测到π9/2^－[514]和π1/2^－[541]转动带的中子AB带交叉的转动频率分别为0.23和0.27MeV.着重讨论了¹⁶⁹Re转动带的中子AB带交叉频率、转动角动量顺排和旋称劈列等,并讨论了奇ARe核转动带结构的系统性     

Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

In this work the device characteristic of bilayer graphene MOSFET is investigated by calculation of transmission coefficient using tight-binding method. The real shape of applied potential on the bilayer graphene was included in the tight binding calculation. As obtained transmission coefficient is used to explore the current–voltage characteristics of the device in both on and off regimes. Electrical behavior of the device was obtained for different gate and drains voltages and channel length.