基于石墨烯/石墨烯卷轴复合薄膜高灵敏度柔性压力传感器

一维导电材料例如纳米线,大量应用于柔性压力传感器中. 但是一维材料和基底之间接触时相互作用力较弱,使得传感器灵敏度、响应时间、和循环寿命等性能指标有待进一步提高. 针对这些问题,设计了石墨烯/石墨烯卷轴多分子层复合薄膜作为传感器导电层. 石墨烯卷轴具有一维结构,而石墨烯的二维结构可以牢固地固定卷轴,以确保高导电性复合薄膜与基底之间的粘附性,同时整体结构的导电通道得到了增加. 由于一维和二维结构的协同效应,实现了应变灵敏度系数3.5 kPa^-1、 响应时间小于50 ms、能够稳定工作1000次以上的压阻传感器.     

Soliton molecules and the CRE method in the extended mKdV equation

The soliton molecules of the(1+1)-dimensional extended modified Korteweg–de Vries(mKdV)system are obtained by a new resonance condition, which is called velocity resonance. One soliton molecule and interaction between a soliton molecule and one-soliton are displayed by selecting suitable parameters. The soliton molecules including the bright and bright soliton, the dark and bright soliton, and the dark and dark soliton are exhibited in figures 1–3, respectively.Meanwhile, the nonlocal symmetry of the extended mKdV equation is derived by the truncated Painlevé method. The consistent Riccati expansion(CRE) method is applied to the extended mKdV equation. It demonstrates that the extended mKdV equation is a CRE solvable system. A nonauto-B?cklund theorem and interaction between one-soliton and cnoidal waves are generated by the CRE method.     

稀土离子掺杂Ⅲ-Ⅴ族半导体的发光

稀土离子掺杂Ⅲ-Ⅴ族半导体的发光是近年来开展起来的新的研究领域.在GaAs,InP和GaP等材料中,用离子注入、LPE、MBE、MOCVD以及单晶生长等方法掺杂Er、Yb和Nd等稀土离子,得到了尖锐稀土离子的特征发光.这些发光来自占据正常立方格点和非立方格点的稀土离子的内部4f能级跃迁,其发光行为与掺杂条件关系很大.这种稀土一半导体材料已开始用来制备具有稳定发射波长的发光和激光器件.     

有机薄膜电致发光器件载流子注入和传输性质的研究

制备了不同电极、不同厚度、以8-羟基喹啉铝螯合物(Alq3)为发光层的有机薄膜电致发光(TFEL)器件。分析了它们的电流密度-电压关系。不同阳极器件的电流变化很大,而改变阴极时电流密度的变化较小,说明电流以空穴为主。根据不同阴极器件的电致发光效率的比较,说明电子是决定器件电致发光效率的少数载流子。从不同厚度的器件的结果讨论了载流子的传输性质,认为在ITO/Alq3/Al器件中的电流符合陷阱限制的空间电荷电流.     

取代环戊二烯锆、铪络合物光解活泼自由基的ESR研究

本文用自旋捕捉术技与ESR相结合的方法,研究取代环成二烯锆、铪络物(RC₅H₄)₂ZrCl₂(R=H,CH₃,C₃H₇,C₄H₉,C₅H₁₁,C₆H₁₁)及(RC₅H₄)₂HfCl₂(R=CH₃,C₂H₅,C₃H₇)光解的活泼自由基。结果表明,取代环成二烯锆、铪络合物与取代环戊二烯钛结合物光解机理相同,即光解初级过程是M-(RC₅H₄)(M=Ti,Zr,Hf)π键的均裂。其差别在于RCpMCl₂(M=Zr,Hf)可为PBN及ND捕获,并后者的加合物表现出氯核的分裂。     

取代吡啶衍生物的13C NMR谱研究

本文测试了三十三个α、β、γ单取代吡啶和二、三取代吡啶衍生物的¹³C NMR谱,归属了全部¹³C NMR谱线。由其¹³C NMR谱线变化规律,研究和总结出各类碳数大于2的烷基取代基对α、β、γ单取代吡啶环碳化学位移的经验取代参数和吡啶环作为一个官能团对烷烃衍生物的取代效应,讨论了单烷基和多烷基吡啶的取代基加和规律。     

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

A new on-line methodology is used to characterize the negative bias temperature instability (NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by I_D-V_D characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on-the-fly method. It is found that both reaction--diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90\du\ and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction--diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction--diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.     

Effect of ultrasound on adsorption of Geniposide on polymeric resin

The effects of pulse ultrasound with different pulse parameter on the adsorption isotherm and kinetics of Geniposide on Resin 1300 were studied. And the mass transfer model describing the adsorption process was constructed. Amount of Geniposide adsorbed on Resin 1300 in the presence of ultrasound is lower than that in the absence of ultrasound. At our experimental conditions, the adsorption equilibrium constant decreases with increasing ultrasonic intensity and pulse duty ratio, and with decreasing pulse period. In addition, pulse ultrasound can enhance both liquid film diffusion and intraparticle diffusion, and the intensification of liquid film diffusion with pulse ultrasound is stronger than that of intraparticle diffusion. The intraparticle diffusion coefficient D(e)/R2 increases with increasing ultrasonic intensity and pulse duty ratio, and with decreasing pulse period.