Rapid detection of Escherichia coliform with a bulk acoustic wave sensor based on the gelation of Tachypleus amebocyte lysate

A new sensing method (BAW-TAL technique), which combined the bulk acoustic wave (BAW) technique with the gelation reaction of Tachypleus amebocyte lysate (TAL), was used for viscosity and density measurement and applied to the detection of Escherichia coliform (E. coli). This method depended on the fact that the viscosity and density of the mixture increased, and as a result, the resonance frequency decreased correspondingly after TAL was mixed with the heated E. coli solution that contained endotoxin. Results showed that the frequency shift was linearly related to the logarithm of E. coli concentration in the range of 2.7x10(4)-2.7x10(8) cells/ml. The correlation coefficient was 0.996. This BAW-TAL method was compared with the standard pour plate counts (PPC) method. The proposed method was much more rapid and simpler for detection of E. coli than the traditional methods.     

CARRIER PHOTOGENERATION IN POLY（N-VINYL-CARBAZOLE）-BASED PHOTOCONDUCTIVE THIN-FILM DEVICES

In this paper, photoexcitation processes in the bilayer devices based on inorganic materials and poly（N-vinylcarbazole） （PVK） were investigated. In order to clarify the roles of inorganic materials in photoconductive properties of bilayer devices, TiO2 and ZnS were chosen to combine with PVK. A model for generation of photocurrent （Iph） in single layer device of PVK was obtained. It is deduced that the recombination rate constant （Pcomb） and the ionization rate constant （y） ofexcitons should be considered as the most important factors for Iph. For inorganic materials （TiO2 or ZnS）/PVK bilayer devices, in reverse bias of-4 V, the photocurrent of 115 mA/cm^2 in the TiO2/PVK device was observed, but the photocurrent in the ZnS/PVK device was only 10 mA/cma under the illumination light of 340 nm and the light intensity of 14.2 mW/cm^2. The weaker photocurrent is attributed to the absorption of ZnS within UV region and the energy offset at the interface between PVK and ZnS, which impedes the transport of charge carriers.