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941.
LetB1:
n×
N1→
m1,B2:
n×
N2→
m2andQ:
m2→
m1be bilinear forms which are related as follows: ifμandνsatisfyB1(ξ, μ)=0 andB2(ξ, ν)=0 for someξ≠0, thenμτQν=0. Supposep−1+q−1=1. Coifman, Lions, Meyer and Semmes proved that, ifuLp(
n) andvLq(
n), and the first order systemsB1(D, u)=0,B2(D, v)=0 hold, thenuτQvbelongs to the Hardy spaceH1(
n), provided that both (i)p=q=2, and (ii) the ranks of the linear mapsBj(ξ, ·) :
Nj→
m1are constant. We apply the theory of paracommutators to show that this result remains valid when only one of the hypotheses (i), (ii) is postulated. The removal of the constant-rank condition whenp=q=2 involves the use of a deep result of Lojasiewicz from singularity theory. 相似文献
942.
提出了一种用于修正光学神经网络硬件系统误差的虚拟神经网络模型,光学实验结果表明该网络能够有效地消除硬件系统误差对实验结果的影响。 相似文献
943.
The electronic structure and magnetism of SmCo7-xZrx alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d0) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo7-xZrx. The Curie temperature of SmCo7-xZrx is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm5Co32Zr2 cluster may lead to a better understanding of why SmCo7-xZrx is stable phase. Since the spin-up DOS peak of d electrons at EF arises and the bonding of electrons at EF strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo7-xZrx. 相似文献
944.
In this Letter, structural properties of liquid Ni20Al80 have been studied through molecular dynamics (MD) simulations, and results agree well with X-ray experiments. The prepeak in the structure factor manifests the existence of medium-range structural order (MRSO) in liquid Ni20Al80. Analyses in MRSO reveal the dominance of ideal icosahedra and defective icosahedra which, furthermore, form clusters and share common atoms. 相似文献
945.
946.
947.
948.
多阶游程存储是一种不改变光学系统而显著提高光存储容量和数据传输率的新方法.介绍了光致变色多阶游程存储原理和实验系统.提出了基于光致变色原理的多阶游程存储数学模型,该模型反映了记录符反射率与曝光功率、曝光时间之间的非线性关系,并在此基础上确定了光致变色多阶游程存储的写策略.基于650nm光致变色材料进行了4阶游程存储的动态实验.结果表明,实验中采用的650nm光致变色材料可用于多阶游程存储,采用的写策略能够有效地使记录信道线性化,利于采用适合线性系统的信号处理方法.
关键词:
多阶游程
光致变色
光存储
写策略 相似文献
949.
An enantioselective Michael addition of malonate to nitroalkenes is efficiently catalyzed by low loading demethylquinine salts in water; the yield range from 49% to 93% and the ee up to 90%. 相似文献
950.
Li Zhang James A. Bain Jian-Gang Zhu Leon Abelmann Takahiro Onoue 《Journal of magnetism and magnetic materials》2006
A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments. 相似文献