伪测度是乘子的条件

设G是LCA群,S(G)是G上的Segal代数。对S(G)的每一个乘子T,已知它对应唯一一个伪测度σ,使得Tf=σ*f,f∈S(G),并且|T|=|σ|又称此σ是乘子。但对许多Segal代数说来,并不是每一个伪测度都是乘子。本文给出了伪测度是Segal代数的乘子的充分条件,此外还研究了Segal代数的最小伪测度集。     

The Langlands classification for non-connected -adic groups II: Multiplicity one

For a non-connected reductive -adic group, we prove that the Langlands subrepresentation appears with multiplicity one in the representation parabolically induced from the corresponding Langlands data.

     

An application of Bochner's technique to the deformations of the complex structure of

We consider the deformation of the complex structure of . We show that a harmonic deformation on equipped with the Fubini-Study metric is trivial if its supernorm is appropriately small.

     

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

Polymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO₂ gate dielectric near the SiO₂/MEH-PPV interface due to hot-carrier emission.     

Anomalous optical transitions in AlInGaN/GaN heterostructures grown by metalorganic chemical vapor deposition

Using temperature-dependent photoluminescence (PL) measurements, we report a comprehensive study on optical transitions in Al_yIn_xGa_1−x−yN epilayer with target composition, x=0.01 and y=0.07 and varying epilayer thickness of 40, 65 and 100 nm. In these quaternary alloys, we have observed an anomalous PL temperature dependence such as an S-shape band-edge PL peak shift and a W-shape spectral broadening with an increase in temperature. With an increase in excitation power density, the emission peak from the AlInGaN epilayers shows a blue shift at 100 K and a substantial red shift at room temperature. This is attributed to the localization of excitons at the band-tail states at low temperature. Compared to 40 and 65 nm thick epilayers, the initial blue shift observed with low excitation power from 100 nm thick AlInGaN epilayer at room temperature is caused by the existence of deeper localized states due to confinement effects arising from higher In and Al incorporation. The subsequent red shift of the PL peak can be attributed by free motion of delocalized carriers that leads to bandgap renormalization by screening. Due to competing effects of exciton and free carrier recombination processes, such behavior of optical transitions leads to two different values of exponent ‘k’ in the fitting of PL emission intensity as a function of excitation power.     

级联双稳Duffing系统的随机共振研究

研究了级联双稳Duffing系统的随机共振特性, 证明级联双稳Duffing系统变尺度系数、阻尼比和级数等参数的适当调节, 不仅可实现大参数信号的级联随机共振, 而且可优化单级双稳Duffing系统的随机共振特征, 即参数调节的级联双稳Duffing系统能实现比单级双稳Duffing系统更好的随机共振输出. 此外, 级联双稳Duffing系统对方波信号具有良好的滤波整形作用, 可用于实现含噪方波信号的波形恢复. 关键词： 级联双稳Duffing系统 随机共振 变尺度 参数调节     

Optimization in Solvent Selection for Chlorin e6 in Photodynamic Therapy

The photophysical properties of chlorin e6 (Ce6) in twelve different protic, aprotic and non-polar solvents were investigated using ultraviolet–visible and fluorescence spectroscopic methods. Solvatochromic effects were determined by the changes in quantum yield, Stokes shift, fluorescence half-life and excited state dipole moments of Ce6 in the different solvents. The absorption shifts observed in different solvents were further analyzed using the Kamlet-Abboud-Taft model and the nature of solute-solvent interactions between Ce6 and different protic and aprotic solvents was elucidated. The quantum yields were found highest in protic solvents (except water), followed by aprotic and non-polar solvents. Solvent polarity parameters showed a linear increasing trend with Stokes shift and fluorescence half-life, which indicated the presence of Ce6-solvent interaction. Using the Kamlet-Abboud-Taft model, a direct correlation between the solvent polarity parameters and absorption shift was observed, which substantiated the existence of Ce6-solvent interaction by hydrogen bond formation. The excited state dipole moments in specific protic and aprotic solvents were found to be higher than the ground state dipole moments, implying a more polar nature of Ce6 during excited state transition.     

Quantum Cosmology in CGBD Theory

We apply the theory developed in quantum cosmology to a model of charged generalized Brans–Dicke gravity. This is a quantum model of gravitation interacting with a charged Brans–Dicke type scalar field which is considered in the Pauli frame. The Wheeler–DeWitt equation describing the evolution of the quantum Universe is solved in the semiclassical approximation by applying the WKB approximation. The wave function of the Universe is also obtained by applying both the Vilenkin-like and the Hartle–Hawking-like boundary conditions. We then make predictions from the wave functions and infer that the Vilenkin's boundary condition is more reasonable in the Brans–Dicke gravity models leading a large vacuum energy density at the beginning of the inflation.     

High longitudinal selectivity of shifting multiplexing in volume holograms

High longitudinal selectivity of the shifting multiplexing with spherical reference wave is proposed and demonstrated. A simplified method based on wave optics is used for calculating the selectivity, and the result fits well the experimental measurement. Under the paraxial condition, a simple formula for the longitudinal selectivity is introduced. With use of an object lens with effective NA=0.817, we obtain that an FWHM of selectivity is as small as 1 μm.