Study of decay mechanisms in B--->Lambdac+ppi- decays and observation of low-mass structure in the Lambdac+p system

Using a sample of 152 x 10(6) BB pairs accumulated with the Belle detector at the KEKB e+e- collider, we study the decay mechanism of three-body charmed decay B- --> Lambdac+ ppi-. The intermediate two-body decay B--->Sigmac (2455)0 p is observed for the first time with a branching fraction of (3.7 +/- 0.7 +/- 0.4 +/- 1.0) x 10(-5) and a statistical significance of 8.4sigma. We also observe a low-mass enhancement in the (Lambdac+p) system, which can be parametrized as a Breit-Wigner function with a mass of (3.35(-0.02)(+0.01) +/-0.02) GeV/c2 and a width of (0.07(-0.03)(+0.04) +/-0.04) GeV/c2. We measure its branching fraction to be (3.9(-0.7)(+0.8) +/- 0.4 +/- 1.0) x 10(-5) with a statistical significance of 6.2sigma. The errors are statistical, systematic, and that of the Lambdac+-->pK- pi+ decay branching fraction.     

Analysis of laser micro drilled holes through aluminium for micro-manufacturing applications

Conventional laser machining of aluminium with long wavelength lasers has its inherent problems due to the high reflectivity of aluminium to laser radiation (Handbook of Optics, vol 1, 2nd ed. New York: McGraw-Hill; 1995). Laser processing at shorter wavelengths reduces the reflectivity of the workpiece to the incident laser radiation and can also reduce the dimensions of the obtainable machining geometries. This paper reviews the limiting factors in the micro machining of aluminium using a diode pumped solid state (DPSS) Nd:YAG laser operated at 1064, 532, and 355 nm. The geometries of the laser-machined samples were investigated using interferometric, and optical methods to assess how the processing fluence and wavelength will affect the obtainable precision for successful integration of the laser in a micromachining CAD/CAM system.     

Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.     

Current and frequency modulation characteristics for continuous-wave quantum cascade lasers at 9.06 μm

We report the characteristics of current induced frequency modulation (FM) for two continuous-wave quantum cascade lasers (QCLs) at 9.06 μm. Both the frequency tuning rate and the phase shift between intensity modulation and FM are measured at different modulation frequencies from 10 Hz to 200 kHz. The frequency tuning rate of the QCLs depends on both the modulation frequency and amplitude. The tested QCL has been used to detect ambient water vapor with wavelength modulation spectroscopy for validation with a numerical model.     

Precision position measurement of single atom

Atom localization in a five-level atomic system under the effect of three driving fields and one standing wave field is suggested. A spontaneously emitted photon from the proposed system is measured in a detector. Precision position measurement of an atom is controlled via phase and vacuum field detuning without considering the parity violation.     

Dielectric properties of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ bulk superconductor

The dielectric properties of Cu_0.5Tl_0.5Ba₂Ca₃Cu₄O_12−δ superconductor samples were studied at 79 and 290 K by means of capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 kHz to 10 MHz. A negative capacitance (NC) phenomenon has been observed, which is most likely arising due to higher Fermi level of ceramic superconductor samples than metal electrodes. Also the NC may be due to the space charge located at the multiple insulator–superconductor interfaces (grain boundaries) in the materials. The negative dielectric constant (ε′) and loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 79 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).     

The role of Pb ions doping in the mechanism of chromate adsorption by goethite

Pure and 0.384% Pb²⁺ ions doped goethite samples were prepared in the laboratory by the coprecipitation method. The laboratory-prepared goethite samples were characterized for pH of point of zero charge (pH_pzc), surface area, XRD, TG-DTA, TEM, SEM and FTIR analysis, which suggest that the Pb²⁺ ions are incorporated into the crystals of goethite and are also present on the surface in the hydroxylated form. Chromate adsorption studies were carried out in the concentration range 0.25-2.01 mmol L⁻¹ at pH 3, 5 and 7, which show that maximum chromate is adsorbed at the lowest pH of 3 by both the samples of goethite. Effect of temperature on the adsorption of chromate, in the range 303-323 K, shows that the process of adsorption is endothermic in case of pure goethite and exothermic in case of Pb-doped goethite. The values of isosteric heat of adsorption were positive for pure goethite and negative for Pb-doped goethite, which are consistent with the effect of temperature on the process of adsorption. Langmuir isotherm was found applicable to the experimental data. FTIR analysis and equilibrium pH changes reveal that at pH 3 outersphere while at pH 5 and 7 innersphere complexation is the dominant mechanism for chromate adsorption by both the samples of goethite.     

Effect of tellurium on electrical and structural properties of sintered silicon nitride ceramics

The effects of tellurium (Te) additives on electrical conductivity, dielectric constant and structural properties of sintered silicon nitride ceramics have been studied. Different amounts of Te (10% and 20%) were added as sintering additives to silicon nitride ceramic powders and sintering was performed. Microstructure and composition were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The electrical conductivity and dielectric constant (ε′) increase exponentially with temperature greater than 800 K. The electrical conductivity and dielectric constant increase but activation energy decreases from 0.72 to 0.33 eV with the increase of Te concentration. However, the conductivity increases five orders of magnitude at the concentration of 10% of Te in Si₃N₄. As the Te concentration increases the sintered silicon nitride ceramics become denser. These types of samples can be used as high temperature semiconducting materials.     

Magnetohydrodynamic Stagnation Point Flow of a Maxwell Nanofluid with Variable Conductivity

This article reports the simultaneous properties of variable conductivity and chemical reaction in stagnation point flow of magneto Maxwell nanofluid.The Buongiorno's theory has been established to picture the inducement of Brownian and thermophrotic diffusions effects.Additionally,the aspect of heat sink/source is reported.The homotopic analysis method(HAM) has been worked out for the solution of nonlinear ODEs.The behavior of inferential variables on the velocity,temperature,concentration and local Nusselt number for Maxwell nanofluid are sketched and discussed.The attained outcomes specify that both the temperature and concentration of Maxwell fluid display analogous behavior,while the depiction of Brownian motion is quite conflicting on both temperature and concentration fields.It is further noted that the influence of variable thermal conductivity on temperature field is similar to that of Brownian motion parameter.Moreover,for the confirmation of our study comparison tables are reported.