Mimicking optical activity for generating radially polarized light

We propose a new scheme for generating radially polarized light by mimicking optical activity using linear birefringence. It involves a birefringent spirally varying retarder sandwiched between two orthogonally oriented quarter-wave plates. Using Poincaré sphere representation, we show that the polarization transformation of such a scheme is equivalent to that of a spirally varying optical activity and is capable of generating radially polarized light. We demonstrate the proof-of-concept using y-cut crystalline quartz.     

长寿命吸收过程对超快动力学过程测量的影响

使用飞秒时间分辨抽运-探测透射光谱技术,实验研究了GaAs体材料中光激发载流子的超快弛豫动力学的波长依赖.在相同的光激发载流子浓度和抽运/探测比时,发现760 nm和780 nm两中心波长处的瞬态透射变化延迟扫描信号出现负的和振荡的信号.与模拟计算结果对比,判定该实验瞬态信号是错误的.分析探测器输出波形,发现是由于反相波形导致的,而引起反相波形的原因在于样品中存在长寿命的吸收过程.指出通过提高探测器上的抽运/探测比能够矫正反相波形,从而获得正确的瞬态透射变化动力学.提高探测器上的抽运/探测比与目前的应尽量减小抽运光对探测器的散射贡献的观点是对立的.文章的研究结果对应用抽运-探测时间分辨光谱技术正确地测量超快瞬态动力学过程具有重要的参考价值. 关键词： 时间分辨抽运-探测透射光谱 饱和吸收 吸收增强 GaAs体材料     

自由基型光引发剂的瞬态及稳态荧光特性研究

利用荧光光谱技术研究了不同自由基型光引发剂的瞬态及稳态荧光光谱特性,从分子结构出发分析了共轭结构对光引发剂荧光光谱的影响.实验结果表明随共轭效应的增强,荧光激发与发射峰波长逐渐增大;瞬态荧光谱的衰减受电子基团的影响较为明显,含有吸电子基团的光引发剂荧光衰减快,而含有给电子基团的光引发剂荧光衰减慢.通过对溶剂极性及粘度研...     

氮化镓基发光二极管结构中粗化 p型氮化镓层的新型生长方法

提出了一种新型p型氮化镓粗化外延生长方法,这种生长方法的本质特征是利用低温生长的p型氮化镓作为粗化层的"晶籽"层,然后在这一层的基础上高温快速生长p型氮化镓,使粗化程度得到放大. 经实际制作尺寸为12 mil×10 mil的蓝光发光二极管器件并进行验证测试,与未进行p型氮化镓粗化的结果相比,通过这种方法粗化的发光二极管光通量可提升45%;结果同时表明,该方法有效解决了低温生长p型氮化镓带来的漏电流大,及预通镁源带来的前置电压高的问题. 关键词： 粗化 氮化镓 p型氮化镓 发光二极管     

GA optimization on multi-segments muffler under space constraints

Whilst the space volume of muffler in noise control system is often constrained for maintenance in practical engineering work, the maximization on muffler’s performance becomes important and essential. In this paper, a novel approach genetic algorithms (GAs) based on the principles of natural biological evolution will be used to tackle this optimization of muffler design [M. Mitchell, An Introduction to Genetic Algorithms, The MIT Press, Cambridge, MA, 1996]. Here, the shape optimization of multi-segments muffler coupled with the GA searching technique is presented. The techniques of binary genetic algorithms (BGA) together with the commercial MATLAB package [G. Lindfield, J. Penny, Numerical Method Using Matlab, second ed., Prentice Hall, Englewood Cliffs, NJ, 2000] are applied in GA searching. In addition, a numerical case of pure tone elimination with 2-5 segments on muffler is introduced and fully discussed. To achieve the best optimization in GA, several GA parameters are on trial in various values. Results show that the GA operators, including crossover mutation and elitism, are essential in accuracy. Consequently, results verify that the optimal sound transmission loss at the designed frequency of 500 Hz is exactly maximized. The GA optimization on multi-segments muffler proposed in this study surely provides a quick and correct approach.     

Two-flux composite fermion series of the fractional quantum Hall states in strained Si

Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si(0.75)Ge(0.25)/Si/Si(0.75)Ge0.25 heterostructure, at temperatures down to 30 mK and in magnetic fields up to 45 T. We observe around nu=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at nu=2/3, 3/5, 4/7, and at nu=4/9, 2/5, 1/3. Among these FQHE states, the nu=1/3, 4/7, and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the IQHE regime that the nu=3 is weaker than the nearby nu=4 state. Our results can be quantitatively understood in the picture of CF's with the valley degree of freedom.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.