Study of B c → D π in the perturbative QCD approach

We investigate the branching ratios and direct CP-asymmetries of the and decays in the PQCD approach. All the diagrams with emission topology or annihilation topology are calculated strictly. A branching ratio of 10^-6 and 10^-7 for and decay is predicted, respectively. Because of the different weak phase and strong phase from penguin operator and two kinds of tree operator contributions, we predict a possible large direct CP-violation: and when γ = 55°, which can be tested in the coming LHC. PACS: 13.25.Hw, 12.38.Bx     

Study of W-Exchange Mode D0 → ФK0

We calculate the branching ratio of rare decay D^0→ФK using the perturbative QCD factorization approach based on kT factorization. Our result shows this branching ratio is （8.7 ± 1.4） x 10^-3, which is consistent with experimental data. We hope that the CLEO-C and BES-Ⅲ can measure it more accurately, which will help us to understand QCD dynamics and D meson weak decays.     

First principles simulation technique for characterizing single event effects

This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.     

考虑流体湿润性影响的核沸腾RohsenoW修正模型

添加界面活性剂的核沸腾在改变蒸气泡生长特性的同时，主要是强化了对流换热．本文考虑流体湿润性影响，对核沸腾换热沿用最广的对流类比模型－Ｒｏｈｓｅｎｏｗ模型进行了修正．通过对实验数据的检验，表明修正后的模型预示值与实测结果吻合很好．     

12C6+离子辐照对阿维链霉菌代谢效应研究

对12C6+ 离子辐照诱变高产阿维链霉菌株ZJAV-Y1-203 和原始菌株ZJAV-A-1 的摇瓶发酵pH 值、菌体浓度、碳源和氮源代谢进行了测定,研究了12C6+ 辐照对阿维链霉菌的代谢效应。在发酵前期(48h),原始菌株发酵液pH 值低于突变菌株;在发酵96~196 h,诱变高产菌株ZJAV-Y1-203 繁殖快,生长旺盛,N的利用率高;菌体浓度大于原始菌株的浓度,且发酵液的pH 稳定,菌体处于代谢相对更稳定期;在发酵144~240 h,诱变高产菌株ZJAV-Y1-203 对糖源消耗低于原始菌株ZJAV-A-1。这些结果表明,12C6+ 离子辐照对阿维链霉菌代谢影响有利于阿维菌素合成。pH value, mycelium concentration, carbon source and nitrogen metabolism in flask fermentation of the mutant high-producing strain ZJAV-Y1-203 and the original strain ZJAV-A1 have been investigated, in order to show the metabolic effect of avermitilis irradiated by ion beam of 12C6. In early stage (48 h) of the fermentation, pH value of the original fermentation was lower than that of the mutant strains. In 96~196 h of fermentation, the nitrogen utilization in the strains ZJAV-Y1-203 was higher than that in the original strains, its reproductive was fast, and its growing was vigorous. The mycelium concentration of ZJAV-Y1-203 was greater than the original strain, and the pH value of fermentation were stable, so its metabolism was relatively more stable. In 144240 h of fermentation, the strain ZJAV-Y1-203 on sugar consumption was less than the original strains. The effect of 12C6 ion irradiation on metabolism of Streptomyces avermitilis is conducive to the synthesis of avermectin.     

氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响

介绍了一种氩、氢混合等离子体清洗GaAs基片的实验工艺,深入研究了氩、氢等离子体清洗GaAs表面污染物和氧化层,并活化表面性能的基本原理,同时讨论了气体流量、溅射功率和清洗时间等不同溅射参数对等离子体清洗效果的影响。结果表明,在氩气和氢气流量分别为10 cm³/min和30 cm³/min,溅射功率为20 W,清洗时间为15 min的条件下,GaAs样品的光致发光强度提高达139.12%,样品表面的As-O键和Ga-O键基本消失。     

用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

湖南砂矿金刚石中石墨包裹体拉曼光谱原位测定：形成条件及成因指示

石墨是天然金刚石中最常见的包裹体之一,按其形成顺序可分为原生、同生、次生,原生/同生与次生石墨包裹体的存在指示了金刚石形成的环境及形成后可能经历的变化。对湖南沅水流域产出的13粒宝石级-半宝石级砂矿金刚石中的原生/同生石墨包裹体及次生石墨包裹体进行显微激光拉曼光谱的原位测试。测试显示,湖南沅水流域金刚石中原生/同生石墨包裹体与次生石墨包裹体的G带与D带拉曼位移均存在漂移,其中原生/同生石墨包裹体G带的漂移范围为1 591～1 600 cm-1,次生石墨的漂移范围为1 575～1 588 cm-1,显示其形成压力较低,结晶压力变化范围大。原生/同生石墨漂移程度估算出该区域压力范围为4.01～5.88 GPa,估算结果与利用橄榄石包裹体拉曼位移估算的源区压力范围基本一致。该区域内金刚石中原生/同生石墨包裹体的D带拉曼位移在1 350～1 368 cm-1之间,D带与G带的强度比(I_D/I_G值)值位于0.36～0.82之间,具有较低有序度结构/结晶程度与橄榄岩型金刚石的高结晶度石墨明显不同指示该区域部分砂矿来源的金刚石的形成深度较浅,成因与榴辉岩关系更为密切,形成过程极可能曾位于石墨-金刚石稳定域附近。研究结果表明,金刚石石墨包裹体拉曼位移的漂移程度可成为探索金刚石原生源区形成环境的有效方法之一。     

n维氢原子的散射态

研究了n维氢原子的散射态性质．给出了精确的按“k/2π标度”归一化的散射态的精确解波函数及相移表达式，讨论了相移的解析性质，获得了束缚-连续跃迁矩阵元的解析计算公式．普通氢原子(n=3)散射态的有关结果作为特例包含在本文的一般结论之中． 关键词： n维氢原子 散射态 精确解 相移 束缚-连续跃迁矩阵元     

化学气相沉积法中SnO2一维纳米结构的控制生长

以Sn和SnO为源材料,化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件,实现了SnO2一维纳米结构的控制生长,成功获得各种不同横向尺度的SnO2纳米线、纳米带以及直径连续变化的针状纳米结构. 通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征,认为高温生长点附近锡与氧的相对含量是控制SnO2一维纳米结构生长的关键因素;并在此基础上对SnO2一维纳米结构的生长机理进行了深入的讨论.