Diffusion of a low-soluble impurity in a solid matrix

An analytical expression for the concentration profile of a low-soluble diffusant in a sample is derived for a high-capacity diffusion source. The model is checked by determining the diffusion coefficient of yttrium in beryllium.     

Internal nonlinear resonance of charged drop capillary oscillations in a dielectric medium at multimode initial deformation of the interface

Technical Physics - An analytical expression for the generatrix of the shape of a nonlinearly vibrating charged drop of a perfect incompressible conducting fluid immersed in an ideal incompressible...     

Low-power RF plasma sources for technological applications: II. plasma sources under anomalous skin effect conditions

A theory of a planar disk-shaped RF plasma source under anomalous skin effect conditions is developed. In the absence of an external magnetic field, such conditions are satisfied for transverse electromagnetic waves with phase velocities below the electron thermal velocity, and, in the presence of this field, they are satisfied for electron cyclotron waves with frequencies corresponding to the resonant absorption line. For each of these cases, the RF field power deposited in a plasma with given parameters is determined and the equivalent plasma resistance is calculated.     

Determination of the glueball mass spectrum with allowance for spin-orbital interactions

The mass spectrum of a coupled state is analytically determined. The mechanism of production of a constituent mass of particles forming a coupled state is explained. The change of the coupled state and constituent particle component masses attendant to changes of the coupling constant is analyzed. The mass spectrum of a two-gluon glueball is determined with allowance for spin-orbital and spin-spin interactions.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 33–41, December, 2004.     

On the Nature of Radiation Resistance in Compensated Silicon

Russian Physics Journal -     

Radiation-Induced Defects in Lithium Sulfate Crystals

Russian Physics Journal -     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

Sensitivity-enhanced IPAP experiments for measuring one-bond C–C and C–H residual dipolar couplings in proteins

Sensitivity-enhanced 2D IPAP experiments using the accordion principle for measuring one-bond 13C'-13Calpha and 1Halpha-13Calpha dipolar couplings in proteins are presented. The resolution of the resulting spectra is identical to that of the decoupled HSQC spectra and the sensitivity of the corresponding 1D acquisitions are only slightly lower than those obtained with 3D HNCO and 3D HN(COCA)HA pulse sequences due to an additional delay 2Delta. For cases of limited resolution in the 2D 15N-1HN HSQC spectrum the current pulse sequences can easily be modified into 3D versions by introducing a poorly digitized third dimension, if so desired. The experiments described here are a valuable addition to the suites available for determination of residual dipolar couplings in biological systems.