Deep trench etching in macroporous silicon

We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. It also enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics. The limits of this new process are simulated using electrostatic models and are verified experimentally. PACS 82.45.Yz; 81.16.-c     

QCD corrections to the forward-backward asymmetries of c and b quarks at the Z pole

Measurements of the forward-backward production asymmetry of heavy quarks in Z decays provide a precise determination of . The asymmetries are sensitive to QCD effects, in particular hard gluon radiation. In this paper QCD corrections for and are discussed. The interplay between the experimental techniques used to measure the asymmetries and the QCD effects is investigated using simulated events. A procedure to estimate the correction needed for experimental measurements is proposed, and some specific examples are given. Received: 26 February 1998 / Published online: 2 June 1998     

Ions and atoms in superfluid helium (4He)

We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.     

High dose iron implantation into silicon and metals

High dose implantations of Fe into metals and semiconductors have been performed with beam energies up to 1 MeV at the UNILAC-injector at GSI. Unusual high concentrations of 70 atomic % for Si and 20 atomic % for Cu have been obtained, with doses of 10¹⁸ Fe/cm² in the case of Si and several 10¹⁷ Fe/cm² in the case of Cu. For Si the thickness of the layers were determined by Rutherford backscattering to be 4500 Å. These results are consistent with calculations, which show that these high concentrations are due to the reduction of the sputter yield at the relative high particle energies. Samples have been characterized using several complementary methods (Mössbauer Spectroscopy (MS), Rutherford Backscattering Spectroscopy (RBS), Auger electron Spectroscopy (AES). Scanning Electron Microscopy (SEM), X-ray diffraction (XRD)).     

Quantum field theories of vortices and anyons

We develop the quantization of topological solitons (vortices) in three-dimensional quantum field theory, in terms of the Euclidean region functional integral. We analyze in some detail the vortices of the abelian Higgs model. If a Chern-Simons term is added to the action, the vortices turn out to be anyons, i.e. particles with arbitrary real spin and intermediate () statistics. Localization properties of the interpolating field, scattering theory and spin-statistics connection of anyons are discussed. Such analysis might be relevant in connection with the fractional quantum Hall effect and two-dimensional models of HighT _csuperconductors.     

Eine ErweiterungT(V′) des Ordinalzahlensystems 58-0158-0158-01(Λ0) von G. Jäger

Summary This paper gives a recursive generalization of a strong notation system of ordinals, which was devellopped by Jäger [3]. The generalized systemT(V) is based on a hierarchy of Veblen-functions for inaccessible ordinals. The definition ofT(V) assumes the existence of a weak Mahlo-ordinal. The wellordering ofT(V) is provable in a formal system of second order arithmetic with the axiom schema of ₂ ¹ -comprehension in a similar way, as it is proved in [6] for the weaker notation systemT(V).     

Precipitation structure in an Al-2·0 at. % Zn-1·0 at. % Mg alloy within and close to the grain boundaries and its effects on mechanical properties

During ageing the Al-2·0 at. %Zn-1·0 at. % Mg alloy at elevated temperatures the width of the precipitation free zone (PFZ) at both sides of the grain boundaries (GB) is identical with that free of quenched-in dislocation loops (DL). After sufficiently long ageing a band of precipitates is growing inside the former PFZ and the DLs in the midgrain regions act as sites for the heterogeneous nucleation of the-phase. Two precipitation processes significantly affect the mechanical properties. TEM correlates grain boundary precipitate density and morphology with grain boundary misorientation.