No-go theorem for critical phenomena in large-N(c) QCD

We derive some rigorous results on the chiral phase transition in QCD and QCD-like theories with a large number of colors, N(c), based on the QCD inequalities and the large-N(c) orbifold equivalence. We show that critical phenomena and associated soft modes are forbidden in flavor-symmetric QCD at finite temperature T and finite but not so large quark chemical potential μ for any nonzero quark mass. In particular, the critical point in QCD at a finite baryon chemical potential μ(B)=N(c)μ is ruled out, if the coordinate (T, μ) is outside the pion condensed phase in the corresponding phase diagram of QCD at a finite isospin chemical potential μ(I)=2μ.     

Excitation of Intra-4f Shell Luminescence of Rare Earth Ions (Er3+ and Yb3+) by the Energy Transfer from Si Nanocrystals

Photoluminescence (PL) properties of SiO₂ films containing Si nanocrystals (nc-Si) and Er³⁺ (Yb³⁺) were studied. PL peaks attributable to the recombination of electron–hole pairs in nc-Si (1.5eV) and the intra-4f shell transition of Er³⁺ (0.81eV) (Yb³⁺ (1.26eV)) were observed simultaneously at room temperature. Correlation of the two peaks was studied as a function of nanocrystalline size. It was found that the intensity of the Er³⁺-related (Yb³⁺-related) peak increases drastically as the size of nc-Si decreases. Temperature dependence of PL spectra was studied. In the case of Yb-doped samples, temperature quenching of the PL became small as the size decreased, while in the case of Er-doped samples, no remarkable temperature dependence was observed. Two major features of the quantum size effects of nc-Si, i.e., the band-gap widening and the increase in the PL efficiency with decreasing the size, are thought to contribute to the improvement of room temperature PL efficiency of Er³⁺ (Yb³⁺).     

Aerial imaging steganography method for aerial imaging by retro-reflection with dual acrylic ball

Optical Review - This paper proposes a novel steganography method to show an aerial image that is formed with aerial imaging by retro-reflection by use of dual transparent balls made of acrylic...     

Theoretical study of resonant tunneling in rectangular double-, triple-, quadruple-, and quintuple-barrier structures

The transmission coefficient and the resonance condition in the one-dimensional rectangular double-, triple-, quadruple-, and quintuple-barrier structures are derived theoretically under the assumption of the constant tunneling effective mass. It is found that the resonance energies are different from the eigenvalues in the quantum well due to coupling between wells in the multiple-barrier (much more than triple-barrier) structures. It is confirmed that the transmission spectrum is a Lorentzian near to energies of resonance.     

Electro‐optic switching with liquid crystal graphene

Graphene oxide (GO) particles in aqueous dispersions can form liquid crystal (LC) phases at extremely low concentrations due to the extremely high aspect ratio of the flakes and noticeably, they possess an extremely large Kerr coefficient attractive for low power consumption electro‐optic devices. Reduced graphene does not easily form LC phases in water due to its hydrophobic nature but here we show that stable dispersions of reduced graphene oxide can be realized with surfactants and that they exhibit birefringence upon shearing as well as under application of electric fields. The performance of the system is largely superior to GO LC possessing longer time stability and drastically improved electro‐optic properties with an induced birefringence twice as large at the same field strength thanks to the almost recovery of graphene properties upon reduction. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Band engineering of silicon for light emission: First-principles approach to the effect of co-doping with nitrogen and fluorine

A Si-based light emitter has long been the final key component for electronic and photonic integrated circuits on Si, because Si has an indirect band gap. Atomistic and electronic structures and energy gains of formation of possible nitrogen (N) and fluorine (F) complexes in Si have been researched from first-principles, in order to engineer the band structure of Si for light emission. The calculated results show that the substitutional nitrogen N_S and bond center fluorine F_BC pair complex has large stabilization energy, and that the pair-complex-doped Si has direct band gap, which is reduced with respect to that of Si. These results lead to the possibilities of doping-based engineering of Si optical properties with introduction of deep-level impurity and charge compensation.