Nickel as a chemical modifier for sensitivity enhancement and fast atomization processes in electrothermal atomic absorption spectrometric determination of cadmium in biological and environmental samples.

A systematic study of the efficiency of protons, Ni, Pd and Th as chemical modifiers for the determination of cadmium by electrothermal atomic absorption spectrometry (ETAAS) using fast temperature programs was made for platform atomization. A comparison was made in terms of the salt type, absorbance-time profiles and elimination of the sodium chloride interference. The results were adapted to develop a method for the ETAAS determination of cadmium in biological and environmental samples. The highest sensitivity to determine cadmium in biological and environmental samples was obtained using nickel (together with protons) as a chemical modifier. The accuracy of the method was tested by the determination of cadmium in different certified reference materials. The best detection limit and the characteristic mass of Cd were found to be 0.03 ng mL(-1) and 0.35 pg, respectively.     

On the structure of hyperbolic manifolds

Forn≥2, we quantify the Margulis constant ε(n) giving rise to a thick and thin decomposition of hyperbolicn-manifolds of finite volume. As a consequence, we obtain new universal lower bounds for the volume and Gromov's invariant as well as a geometrical inequality between injectivity radius and diameter for compact manifolds. Finally, we concretise the upper bound for the counting function of hyperbolic manifolds of dimension >4 as described by Burger, Gelander, Lubotzky and Mozes. Partially supported by Schweizerischer Nationalfonds No. 20-61379.00 and 20-67619.02.     

Weighted approximation of functions on the real line by Bernstein polynomials

The authors give error estimates, a Voronovskaya-type relation, strong converse results and saturation for the weighted approximation of functions on the real line with Freud weights by Bernstein-type operators.     

Surface roughness investigation of semi-conductor wafers

Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range.     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.     

Application of the program LISE to fusion-evaporation

A new fusion-evaporation model LisFus for fast calculation of fusion residue cross sections has been developed in the framework of the code LISE. This model can calculate very small cross sections quickly compared to programs using the Monte Carlo method. Such type of the fast calculations is necessary to estimate fusion residue yields. Using this model, the program LISE now has the possibility of calculating the transmission of fusion residues through a fragment separator. It is also possible to use fusion residue cross sections calculated by the program PACE, which has been incorporated in the LISE package. The code PACE is a modified version of JULIAN—the Hillman-Eyal evaporation code using a Monte Carlo code coupling angular momentum. A comparison between PACE and the LisFus model is presented.