Phase transformation in Ni–Mn–Sn ferromagnetic shape memory alloy thin films induced by dense ionization

The effects of 200 MeV Au ions irradiation on the structural and magnetic properties of Ni–Mn–Sn ferromagnetic shape memory alloy (FSMA) thin films have been systematically investigated. In order to understand the role of initial microstructure and phase of the film with respect to high energy irradiation, the two types of Ni–Mn–Sn FSMA films having different phases at room temperature were irradiated, one in martensite phase (Ni_58.9Mn_28.0Sn_13.1) and other in austenite phase (Ni₅₀Mn_35.6Sn_14.4). Transmission electron microscope (TEM) and scanning electron microscope (SEM) images along with the diffraction patterns of X-rays and electrons confirm that martensite phase transforms to austenite phase at a fluence of 6×10¹² ions/cm² and a complete amorphization occurs at a fluence of 3×10¹³ ions/cm², whereas ion irradiation has a minimal effect on the austenitic structure (Ni₅₀Mn_35.6Sn_14.4). Thermo-magnetic measurements also support the above mentioned behaviour of Ni–Mn–Sn FSMA films with increasing fluence of 200 MeV Au ions. The results are explained on the basis of thermal spike model considering the core and halo regions of ion tracks in FSMA materials.     

Study on the ferromagnetism in Co and N doped ZnO thin films

Present investigation reports the structural, optical and magnetic properties of co-doping of Co and N ions in ZnO samples, prepared by two distinct methods. In the first method, samples are synthesized by Sol–gel technique in which the Co and N are co-doped simultaneously during the growth process itself. In the second case, N ions are implanted in the Co doped ZnO thin films grown by Pulsed Laser Deposition (PLD). Structural studies showed that the nitrogen implantation on Co doped ZnO samples developed compressive stress in the films. X-ray photoelectron spectroscopy confirmed the doping of Co and N in ZnO matrix. In the Resonant Raman scattering multiple LO phonons up to fifth order are observed in the (Co, N) co-doped ZnO. Photoluminescence spectra showed that there is reduction in the bandgap due to the presence of Co in the lattice and also the presence of Zn vacancies in the films. All samples showed ferromagnetic behavior at room temperature. The magnetic moment observed in the implanted films is found to be varied with the different dosages of the implanted N ions. First principle calculations have been carried out to study the possible magnetic interaction in the co-doped system. Present study shows that the ferromagnetic interaction is due to the hybridization between N 2p and Co 3d states in the (Co, N) co-doped ZnO and is very sensitive to the geometrical configurations of dopants and the vacancy in the ZnO host lattice.     

Electrical and structural properties of the swift heavy ion irradiated Au/n-GaAs schottky barrier diodes

Abstract

Au/n-GaAs Schottky Barrier Diodes (SBDs) have been fabricated on LEC grown silicon doped (100) GaAs single crystals. The SBDs were irradiated using high energy (120 MeV) silicon ion with fluences of 1 × 10 ¹¹ and 1 × 10¹² ions/cm². Current-Voltage (I-V) characteristics of unirradiated and irradiated diodes were analyzed. The change in the reverse leakage current increases with increasing ion fluence. This is due to the irradiation induced defects at the interface and its increase with the fluence. The diodes were annealed at 573 and 673 K. to study the effect of annealing. The rectifying behavior of the irradiated (fluence of 1 × 10¹² ions/cm¹²) SBDs improves upon as the annealing temperature increases and is attributed to the in situ self-annealing during irradiation. Scanning Electron Microscopic analysis was carried out on the irradiated samples to delineate the projected range and to observe defects.     

Vibrational spectroscopic (FT-IR and FT-Raman), first-order hyperpolarizablity, HOMO, LUMO, NBO, Mulliken charges and structure determination of 2-bromo-4-chlorotoluene

The FT-IR and FT-Raman spectra of 2-bromo-4-chlorotoluene (2B4CT) molecule have been recorded in the region 4000-400 cm(-1) and 3500-50 cm(-1), respectively. Optimized geometrical structures, harmonic vibrational frequencies, intensities, reduced mass, force constants and depolarization ratio have been computed by the B3 based (B3LYP) density functional methods using 6-31+G(d,p) and 6-311++G(d,p) basis sets. The observed FT-IR and FT-Raman vibrational frequencies are analysed and compared with theoretically predicted vibrational frequencies. The geometries and normal modes of vibration obtained from DFT method are in good agreement with the experimental data. The Mulliken charges, the natural bonding orbital (NBO) analysis, the values of electric dipole moment (μ) and the first-order hyperpolarizability (β) of the investigated molecule were computed using DFT calculations. The calculated HOMO and LUMO energies show that charge transfer occurs within molecule. The influences of bromine atom, chlorine atom and methyl group on the geometry of benzene and its normal modes of vibrations have also been discussed.     

Formation of defect,oxygen vacancy creation,and shifting of phonon mode by Li3+ swift heavy ion irradiation on Zn1 − x Mn x O thin films

Journal of Solid State Electrochemistry - Thin films of pure, Mn-substituted ZnO were synthesized by dip coating technique and irradiated thin films by Li3+ swift heavy ions (SHIs) with fluence...     

Sulfhydrolysis of Acyl Ketene Dithioacetals: A Convenient Synthesis of β-Oxodithioesters

β-Oxodithioesters are obtained in good yields from acyl ketenedithioacetals on treatment with hydrogen sulphide in the presence of boron trifluoride eiherate in refluxing dioxane     

Optical,photo-acoustic and electrical switching studies of amorphous GeS2 thin films

This paper reports optical, photo-acoustic and electrical switching investigations of GeS₂ amorphous thin films of different thicknesses, deposited on glass substrates in vacuum. The Tauc parameter (B ^1/2) and Urbach energy (E _U) have been determined from the transmittance spectra, to understand the changes in structural disorder; it is found that B ^1/2 increases whereas E _U decreases as the thickness of the films increases. Based on the results, it is suggested that bond re-arrangement, i.e. transformation from homopolar bonds to heteropolar bonds, takes place with increase in thickness. The thermal diffusivity values of GeS₂ thin films also show the presence of a chemically ordered network in the GeS₂ thin films. Further, it is found that these films exhibit memory-type electrical switching. The observed variation in the switching voltages has been understood on the basis of increase in chemical order.     

Structural,optical and transport properties of 4-hydroxy coumarin: an organic Schottky diode

In the present paper, 4-hydroxy coumarin compound was synthesized. The crystallographic phase of this molecule was carried out by X-ray diffraction and confirms its monoclinic structure. Associated functional groups were predicted by Fourier transform infrared spectroscopy. To see its potential utility, a Schottky diode of this material was fabricated. The current–voltage (I–V) and optical characteristics of this Schottky diode were also investigated. Various well-established methods related with the device were used to get information about various diode parameters. From its optical measurement, this compound shows an indirect allowed transition. From optical data analysis, a band gap (E _g) of around 3.78 eV was shown by this compound. The observed features exhibited by this molecule give a vital chance to explore its application for various optoelectronic devices.