Synthesis, growth, optical, mechanical, dielectric and thermal properties of 4-chloro-4'-chlorobenzylidene aniline single crystal

The organic material 4-chloro-4′-chlorobenzylidene aniline (CCBA) was synthesized and confirmed by NMR and FTIR spectral analyses. CCBA crystal was grown from chloroform by slow evaporation at room temperature and the single crystal cell parameters were determined by single crystal X-ray diffraction method. The perfection of the grown crystal was analyzed by high resolution X-ray diffraction rocking curve analysis. Fluorescence spectrum indicated violet emission at 428 nm. The range of optical absorbance was ascertained by recording UV–vis–NIR spectrum. Load dependant microhardness measurements on this crystal revealed the mechanical behavior of the material. Stiffness constant, Meyer index and yield strength of CCBA crystal were calculated. Dielectric studies were carried out to estimate the dielectric parameters of the grown crystal in the frequency range from 100 Hz to 100 kHz. The thermal behavior of CCBA was investigated using differential scanning calorimetry (DSC) and no phase transition was identified in the temperature region 30–100 °C. Further, the CCBA crystal was subjected to open aperture Z-scan studies in order to investigate the third order nonlinear optical (NLO) properties of CCBA crystal.     

Direct Similarity Analysis of Generalized Burgers Equations and Perturbation Solutions of Euler–Painlevé Transcendents

Similarity reductions of the generalized Burgers equation     , where α, β, and γ are non-negative constants, n a positive integer and   j = 0, 1, 2  , are obtained by the direct method of Clarkson and Kruskal [ 1 ]. This is the first work to report the similarity variables as an incomplete gamma function and also as a power of     , and to provide a perturbation solution of an Euler–Painlevé transcedent.     

Electrical transport and high pressure studies on bulk Ge20Te80 glass

The electrical resistivity of bulk Ge₂₀Te₈₀ has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K.     

Synthesis of α-In 2 Te 3 thin films from In/Te bilayer by Si ion irradiation

In this work, In/Te bilayer thin films were prepared using sequential thermal evaporation method and subsequently irradiated using swift heavy ions (SHIs) of 100 MeV silicon (Si) with different fluences (1×10¹³ to 5×10¹³/cm²). The inter-diffusion of In and Te layers was highly controlled by SHI irradiation and the In₂Te₃ formation capability was compared with that of the conventional annealing method. The structural as well as optical properties of a post-sintered SHI-irradiated In/Te bilayer were investigated using X-ray diffraction (XRD) measurements and UV–visible spectroscopy, respectively. We found that irradiated samples showed single-phase In₂Te₃ under post-annealed conditions at 150 °C unlike that prepared using the conventional thermal annealing method, which showed mixed phases under similar conditions. This confirms the effective inter-diffusion in bilayer films by SHI irradiation toward the formation of single-phase In₂Te₃. The estimated optical band gap energy was found to be 1.1±0.5 eV and strongly corroborated the XRD results. In addition, the estimated refractive index (n) value of the SHI-irradiated sample (～3.3) was higher than that of the sample obtained through the conventional annealing method (～2.8). This proves that SHI offers a highly compact nature even at low temperatures. This work has a wide scope for achieving single-phase alloyed films through bilayer mixing by SHI irradiation.     

Structural,electrical and optical properties of gamma irradiated methyl para-hydroxy benzoate single crystals

ABSTRACT

Nonlinear optical materials (NLO) have been garnering attention due to their role in optical data storage, optical communication and laser technology. Organic crystals have emerged as an extremely important class of NLO materials, since their NLO properties compare very well with traditional inorganic NLO materials like KCl, LiNbO₃, KDP (potassium dihydrogen phosphate), etc. They offer the additional advantage that they can be grown relatively inexpensively from solution close to room temperature, unlike the inorganic NLO materials which are grown from high temperature melts. In the present work, organic transparent single crystals of methyl para-hydroxy benzoate (MHB) were grown by slow evaporation solution growth technique (SEST) from aqueous solution at room temperature. The changes in structural, electrical and optical properties of gamma irradiated MHB single crystals were studied using X-ray diffraction (XRD), UV–Visible absorption spectroscopy, Photo-luminescence (PL), Fourier transform infrared (FTIR) spectroscopy and AC conductivity measurements at room temperature. The polished MHB single crystals were irradiated with gamma rays of doses 10 and 15 kilogray (kGy). From the XRD analysis, it was observed that gamma irradiation for these doses drastically decreases the crystallinity. The optical absorption constants were examined by UV-Visible absorption spectroscopy, measured over the wavelength range of 200–800?nm, at normal incidence. The optical band gap as estimated from the Tauc plot ((αhν)² vs hν) was found to be reduced with increasing gamma irradiation doses. PL spectra showed emission at wavelengths of 361?nm (3.43?eV) and 452?nm (2.74?eV), with enhanced intensities for the irradiated crystals. FTIR spectroscopy was utilised to identify the functional groups of MHB and indicated the rupture of specific types of bonds with gamma irradiation. Apart from that, the enhancement of AC conductivity with gamma irradiation was also observed for the gamma irradiated crystals.     

The presence of a thermally reversing window in Al-Te-Si glasses revealed by alternating differential scanning calorimetry and electrical switching studies

Alternating differential scanning calorimetric (ADSC) studies and electrical switching experiments have been undertaken on Al₁₅Te_85−xSi_x (2 ? x ? 12) system of glasses. These glasses are found to exhibit two crystallization reactions (T_c1 and T_c2), for compositions with x < 8. Above x = 8, a single-stage crystallization is seen. Further, a trough is seen in the composition dependence of non-reversing enthalpy (ΔH^NR), based on which it is proposed that there is a thermally reversing window in Al₁₅Te_85−xSi_x glasses, in the composition range 4 ? x ? 8. Electrical switching studies indicate that Al₁₅Te_85−xSi_x glasses exhibit a threshold type electrical switching at ON state currents less than 2 mA. Further, the switching voltages are found to increase with the increase in silicon content. It is interesting to note that the start (x = 4) and the end (x = 8) of the thermally reversing window are exemplified by a kink and a saturation in the composition dependence of switching voltages, respectively.     

Effect of swift heavy ions in Ni-Al nanocrystalline films studied by X-ray absorption spectroscopy

X-ray absorption spectroscopic measurements have been used to compare the electronic structures of swift heavy ions (100 MeV Si ions) irradiated and pristine Ni-Al nanocrystalline films. Results from X-ray diffraction (XRD), X-ray absorption near-edge structure (XANES) spectra at Al K-, and Ni L(2,3)-edges and extended X-ray absorption fine structure (EXAFS) at Ni K-edges are discussed. The observed XRD peaks indicate the improvement of crystalline nature and Al(111) clustering after the swift heavy ion interactions. While the XANES spectra at Ni L(2,3)-edges show decrease in the intensity of white line strength, the Al K-edge shows increase in intensity after irradiation. Above results imply that swift heavy ions induce low Z (i.e., Al) ion mass transport, changes in Al sp-Ni-d hybridization, and charge transfer. EXAFS results show that crystalline nature is improved after swift heavy irradiation which is consistent with XRD results.     

Alkylation of aryl 3-oxopropanedithioate and 3-amino-1-aryl-3-thioxo-1-propanones as an effective tool for the construction of differently substituted thiophenes and annulated thiophenes

The alkylation of aryl 3-oxopropanedithioate with α-haloketones under different reaction conditions afforded substituted aryl[2-(methylsulfanyl)-4-phenyl-3-thienyl]methanones and [3-aryl-5-(methylsulfanyl)-2-thienyl](phenyl)methanones. The same strategy was extended to 3-amino-1-aryl-3-thioxo-1-propanones to afford aryl[2-amino-4-phenyl-3-thienyl]methanones and ethyl 3-phenyl-5-piperidino-2-thiophene carboxylate.     

The reaction of 2‐aroyl‐3,3‐bis(alkylsulfanyl)acrylaldehydes and hydroxylamine hydrochloride: Facile synthesis of differently substituted isoxazoles

2‐Aroyl‐3,3‐bis(alkylsulfanyl)acrylaldehyde was utilized for the synthesis of three different isoxazoles by reacting with hydroxylaminehydrochloride. We synthesized differently substituted isoxazoles like (aryl)[5‐(methylsulfanyl)‐4‐isoxazolyl]methanones, 3‐(methylsulfanyl)‐5‐phenyl‐4‐isoxazolecarbonitriles and 5‐aryl‐3‐(methylsulfanyl)‐4‐isoxazolecarbaldehyde oximes in good yields by varying the substratereagent stoichiometry and temperature of the reaction medium.     

Ag implantation-induced modification of Ni–Ti shape memory alloy thin films

Nanocrystalline thin films of Ni–Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120?keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni–Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni–Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni–Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (E_r) are observed for the film implanted at an optimized fluence of 9?×?10¹⁵ ions/cm². This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni–Ti thin films.