Applications of fast atom bombardment mass spectrometry (FAB MS) to organometallic and coordination chemistry

This article describes the technique of fast atom bombardment mass spectrometry (FAB MS) and its applications to the analysis of organometallic and coordination complexes. Sections on ion generation and matrices are followed by a Periodic Group-based review of FAB MS results obtained from Transition Metal and Main Group compounds, organometallic cluster carbonyls and their derivatives, and salts of poly-oxo-anions. The literature has been surveyed from 1981 to approximately mid-1986.     

Decompositions of continuity and complete continuity

We introduce the notions of δ-t-sets, δ_β-t-sets, δ-B-continuity and δ_β -B-continuity and obtain decompositions of continuity and complete continuity.     

Extraction of strontium using an irradiated extraction agent of crown structure

The partition coefficient of strontium upon its extraction from the aqueous solutions of picric acid into chloroform containing DC-18-crown-6, B-15-crown-5 after their exposition to gamma radiation has been studied. A significant decrease of the partition coefficient in the studied range of doses 10–70 kGy was observed. This effect can be attributed to the radiolytic products of chloroform. The radiation destruction as well as dehydrogenation of crown ethers were not observed.     

The infrared spectra of the halogen isocyanate and thiocyanate vapor molecules

Fourier transform infrared spectroscopy has been used to investigate the IR spectra of the XNCO (X = Cl, Br, I, CN), the XSCN (X = Cl, Br, I) and the NCNCS vapor molecules from 4800 to 400 cm⁻¹. Vibrational frequencies have been determined for each normal mode of vibration in each molecule in this region.     

Voltage ‐ Current Study of an Atmospheric Dielectric Barrier Discharge

The discharge behaviour of an atmospheric dielectric barrier parallel plate discharge, used for surface treatment, is studied. Since an uniform plasma is preferable for surface treatment, filaments must be avoided in the discharge. The occurrence of filaments can be detected by measuring the current flowing through the discharge. Current and voltage measurements give an indication of the power consumption by the plasma. The power consumption of the plasma as function of the applied frequency is examined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The high-T c superconductor Sr0.2Lai1.8CuO4: A direct and inverse-photoemission study

We have measured ultraviolet and inverse-photoemission spectra of the novel superconductor Sr₀₂La_1.8CuO₄. Our results compare favorably with recent band-structure calculations for La₂CuO₄.A full account of this work will be published elsewhere [1]     

On the problem of stochastic differential inclusions

In this paper we study a stochastic differential equation with multivalued maximally monotone drift operator. Under certain assumptions on the growth of the multivalued operator we prove a theorem on the existence and uniqueness of the solution of such an equation.Translated fromTeoriya Sluchainykh Protsessov, Vol. 15, pp. 54–59, 1987.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen