Investigation of structural and optical properties of 100 MeV F7+ ion irradiated Ga10Se90-xAlx thin films

Present work focuses on the effect of swift heavy ion (SHI) irradiation of 100 MeV F⁷⁺ ions by varying the fluencies in the range of 1 × 10¹² to 1 × 10¹³ ions/cm² on the morphological, structural and optical properties of polycrystalline thin films of Ga₁₀Se_90-xAl_x (x = 0, 5). Thin films of ~300 nm thickness were deposited on cleaned Al₂O₃ substrates by thermal evaporation technique. X-ray diffraction pattern of investigated thin films shows the crystallite growth occurs in hexagonal phase structure for Ga₁₀Se₉₀ and tetragonal phase structure for Ga₁₀Se₈₅Al₅. The further structural analysis carried out by Raman spectroscopy and scanning electron microscopy verifies the defects or disorder of the investigated material increases after SHI irradiation. The optical parameters absorption coefficient (α), extinction coefficient (K), optical band gap (E_g) and Urbach’s energy (E_U) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200–1100 nm. It was found that the values of absorption coefficient and extinction coefficient increase while the value of optical band gap decreases with the increase in ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model.     

Fiber Bragg grating sensor package for submicron level displacement measurements

Experimental Techniques - In this article, the design and development of a Fiber Bragg Grating (FBG) based displacement sensor package for submicron level displacement measurements are presented. A...     

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga₁₀Se₈₅Sn₅ thin films with a thickness of ～300?nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV–vis-spectrophotometer in the wavelength range of 200–1100?nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n₀, oscillator strength E_d, zero frequency dielectric constant ε₀, optical conductivity σ_optical and the dissipation factor increases after irradiation, while the single oscillator energy E_o decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Extended rigidity percolation and chemical thresholds in Ge-Te-Pb glasses as revealed by MDSC

Thermal analysis of Ge₂₀Te_80−xPb_x (2≤x≤8) glasses has been undertaken using modulated differential scanning calorimetry (MDSC). The compositional dependence of thermal parameters is investigated. The crystallization temperatures (T_c) estimated from the total heat flow show detectable changes at compositions x=4, 6.5 and 7.5. Further, the heat capacity change at the glass transition temperature, measured from the reversible heat flow curve (ΔC_p^R), is found to exhibit a maximum and an inflexion at compositions x=4 and 6.5 and minimum at x=7.5, respectively. Also, the relaxation enthalpy, estimated from the area under the non-reversing heat flow curve (ΔH^NR), exhibits similar features at the said compositions. From the observed MDSC results, it has been proposed that the compositions x=4 and x=6.5 denote to the onset and completion of rigidity percolation and x=7.5 corresponds to the chemical threshold of the system.     

<Emphasis Type="Italic">Insilco</Emphasis> Prediction and Characterization of microRNAs from <Emphasis Type="Italic">Oncopeltus fasciatus</Emphasis> (Hemiptera: Lygaeidae) Genome

For studies on functional genomics, small RNAs, especially microRNAs (miRNAs), have emerged as a hot topic due to their importance in cellular and developmental processes. Identification of insect miRNAs largely depends on the availability of genomic sequences in the public domain. The large milkweed bug, Oncopeltus fasciatus (Dallas) is a hemimetabolous insect which has become a model hemipteran system for various molecular studies. In this study, we identified 96 candidate mature miRNAs from O. fasciatus genome using a blast search with the previously reported animal miRNAs. The secondary structure of predicted miRNA sequences was determined online using “mfold” web server and verified by calculating the minimal free energy index (MFEI). Six miRNAs let-7e, miR-133c, miR-219b, mir-466d, mir-669f, and mir-669l are reported for the first time in Insecta. Comparison of O. fasciatus mir-2 and mir-71 family clusters to those of diverse insect species showed that they are highly conserved. The phylogenetic analysis of miRNAs revealed the evolutionary relationship of conserved miRNAs of O. fasciatus with other insect species. Using a classical rule-based algorithm method, we predicted the possible targets of the new miRNAs. Our study not only identified the list of miRNAs in O. fasciatus but also provides a basic platform for developing novel pest management strategies based on artificial miRNAs.     

High pressure room temperature and high pressure low temperature resistivity studies on As-Te-Se glasses

Abstract

The electrical resistivity measurements have been carried out on bulk As_xTe_100-x-ySe_y (30 ≤ ′ ≤ 50; 10 ≤ y ≤ 25) glasses up to 8 Gpa pressure, and temperature down to 77 K. All the As-Te-Se glasses are found to exhibit a continuous semiconductor to metal transition under pressure. However, glasses with a mean coordination number Z ≥ 2.4 show an initial plateau in resistivity, followed by a continuous decrease. This behaviour is consistent with the earlier observation on the As-Te glasses and is explained in terms of the changes in the local structure of the chalcogenide glasses with the composition.     

The electrical switching and thermal behavior of bulk Ge15Te85 − xSnx and Ge17Te83 − xSnx glasses

Bulk Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses, are found to exhibit memory type electrical switching. The switching voltages (V_t) and thermal stability of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses are found to decrease with Sn content. The composition dependence of V_t has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge–Te–Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses.     

Thermally reversing window in Ge15Te85 − xInx glasses: Nanoindentation and micro-Raman studies

Nanoindentation studies on Ge₁₅Te_85 ? xIn_x glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge₁₅Te_85 ? xIn_x glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system. Further, micro-Raman studies reveal that as-quenched Ge₁₅Te_85 ? xIn_x samples exhibit two prominent peaks, at 123 cm^? 1 and 155 cm^? 1. In thermally annealed samples, the peaks at 120 cm^? 1 and 140 cm^? 1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm^? 1 and 141 cm^? 1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-aging and are more stable.     

Investigation of phase segregation in Zn1−xMgxO systems

The present work reports on the synthesis of the Zn_1?xMg_xO (x = 0, 0.02, 0.05, 0.10, 0.15 and 0.20) samples by sol–gel method and the investigations on their structural, morphological and optical properties. X-ray diffraction (XRD) data analysis confirms the formation of pure ZnO phase below 10% Mg doping and MgO related phases appears in 10% doped sample indicating that phase segregation of MgO starts at x ≥ 0.10 samples. The phase segregation observed through XRD analysis is also supported by results from Scanning Electron Microscopy (SEM), Raman spectroscopy and photoluminescence studies. Furthermore, the enhancement in optical band gap, with Mg doping, from 3.1 ± 0.1 eV to 3.5 ± 0.1 eV has been observed through UV–Vis spectroscopic analysis. Above results have been discussed on the basis of defects level observed through Raman and photoluminscence studies.