Dielectric properties of anodic films on sputter-deposited Ti-Si porous columnar films

For electrolytic capacitor application of the single-phase Ti alloys containing supersaturated silicon, which form anodic oxide films with superior dielectric properties, porous Ti-7 at% Si columnar films, as well as Ti columnar films, have been prepared by oblique angle magnetron sputtering on to aluminum substrate with a concave cell structure to enhance the surface area and hence capacitance. The deposited films of both Ti and Ti-7 at% Si have isolated columnar morphology with each column revealing nanogranular texture. The distances between columns are ∼500 nm, corresponding to the cell size of the textured substrate and the gaps between columns are 100-200 nm. When the porous Ti-7 at% Si film is anodized at a constant current density in ammonium pentaborate electrolyte, the growth of a uniform amorphous oxide film continues to ∼35 V, while it is limited to less than 6 V on the porous Ti film. The maximum voltage of the growth of uniform amorphous oxide films on the Ti-7 at% Si films is similar for both the flat and porous columnar films, suggesting little influence of surface roughness on the amorphous-to-crystalline transition of growing anodic oxide under the high electric field. Due to the suppression of crystallization to sufficiently high voltages, the anodic oxide films formed on the porous Ti-7 at% Si film shows markedly improved dielectric properties, in comparison with those on the porous Ti film.     

Crystal growth and luminescent properties of Pr-doped K(Y,Lu)3F10 single crystal for scintillator application

Pr1%:K(Y_1−xLu_x)₃F₁₀ (x=0, 0.2, 0.4) single crystals were grown by the μ-PD method. All the grown crystals were greenish and perfectly transparent without any inclusions or cracks. Radioluminescence spectra and decay kinetics of the Pr1%:K(Y,Lu)₃F₁₀ crystals were measured. Emission from the Pr³⁺ 5d–4f transition, peaking around 260 nm and of the decay time of around 22 ns were observed. The 5d–4f emission intensities of the Pr1%:K(Y,Lu)₃F₁₀ crystals were higher than that of the standard BGO scintillator.     

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Dissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process.     

Charge and radial correlations in helium and helium-like atoms

Summary For two-electron atoms, the method of a variable exponent, which treats the orbital exponent (or effective nuclear charge) of an electron as an explicit function of the radial coordinate of the other electron, is studied. The method is shown to improve the energy and other electronic properties remarkably. An incorporation of the variable exponent into the Kellner approximation for He, for example, gives the energy –2.872 606 1 a.u., which is lower than the original Kellner energy by 0.024 949 8 a.u. and exceeds the Hartree-Fock limit energy by 0.010 926 1 a.u. The improvement due to the variable exponent originates from the inclusion of the charge and radial correlations. Applications of the method to the Eckart and Hylleraas approximations are also presented.     

Ion-channel sensors based on ETH 1001 ionophore embedded in charged-alkanethiol self-assembled monolayers on gold electrode surfaces.

An ion-channel sensor was demonstrated by immobilizing ETH 1001, an ionophore for ion-selective electrodes, on a gold electrode surface. The approach for preparing the sensor was to incorporate the ionophore into a mixed self-assembled monolayer of 10-mercaptodecanesulfonate and 11-hydroxy-1-undecanethiol formed on the surface. The voltammetric responses for the thus prepared sensor to the primary cation Ca(2+) were observed by using [Fe(CN)(6)](3-/4-) as an electroactive marker. The ionophore was stably immobilized on the electrode surface with the hydrophobic interaction between its alkyl chains and those of the alkanethiol. The introduction of a proper charge density to the electrode surface improved the sensor sensitivity with retaining the selective response to Ca(2+) against Mg(2+) with concentrations above 10(-4) M.     

Thermodynamics and morphology of the amorphization reaction during the rod-milling of Al-50 at.% Ta alloy powder

A report is presented on the crystalline to amorphous phase transition induced by the rod-milling of a mixture of Al and Ta powders using the mechanical alloying method. Based on the thermal and morphological analyses, it is shown that the mechanical alloying process is classified into three stages, i.e., the agglomeration, amorphization and homogenization stages. During the agglomeration and amorphization stages, a thermal-assisted amorphization leads to the formation of an amorphous phase by a solid-state amorphization reaction. At the homogenization stage, however, an amorphous phase with fine nanostructure is formed due to the mechanical driving force generated by the shear force of the rods.