SU(2) instantons with boundary jumps and spin tunneling in magnetic molecules

Coherent state path integrals are shown in general to contain instantons with jumps at the boundaries, i.e., boundary points lying outside classical phase space. Inclusion of these instantons is shown to resolve the "missing quench paradox" in the magnetic molecule Fe8, i.e., the fact that the tunneling between the ground Zeeman states of this molecule is quenched at only four magnetic field values, instead of the ten that would be expected from the topological Berry phase between interfering instantons. An approximate formula is found for the location of the four remaining quenches.     

Reheating as a surface effect

We describe a new mechanism for reheating the Universe through evaporation of a surface charge of a fragmented inflaton condensate. We show that for a range of Yukawa coupling of the inflaton to the matter sector evaporation gives rise to a much smaller reheat temperature compared to the standard perturbative decay. As a consequence, reheating through a surface effect could solve the gravitino and moduli overproduction problem in inflationary models without fine tuning the Yukawa sector.     

Electrical conduction mechanism in a polycrystalline Sb35Se65 sample

Localized state conduction through a variable-range hopping mechanism in the low-temperature region (～180–270 K) and thermally activated phonon-assisted tunneling in the higher-temperature region (～270–320 K) has been observed in a polycrystalline Sb₃₅Se₆₅ sample.     

Structural classification of layered dichalcogenides of group IV B,V B and VI B transition metals

A classification of the trigonal prismatic and octahedral structures exhibited by the layered dichalcogenides of group IV B, V B and VI B metals is achieved through consideration of the relative size, polarisation of the bonding orbitals, and the ionicity of the metal-chalcogen bond. A plot of the ratio of the covalent radii of the metal and chalcogen atoms against Pauling's resonating bond ionicity is shown to successfully achieve a separation of the two structures, consistent with the primarily covalent nature of the bonds.     

Picosecond optoelectronic switching in CdS0.5Se0.5

So far only few materials have been investigated for their application in fast opto-electronic switching. These materials are Si, GaAs and InP. The difficulty in obtaining a high resistivity specimen of group IV elemental semiconductors puts constraints on their high power handling capability. Most of the group III–V compounds have the possibility of showing up of Gunn effect at high fields, which has undesirable effect in high voltage switching. We have, therefore, investigated a mixed II–VI compound CdS_0.5Se_0.5 for its potential use as an opto-electronic switch.     

A re-investigation of the far-infrared spectrum of isotactic polystyrene in the 7–2400 cm−1 region at ambient temperature

Fourier-transformed interferometric techniques have been utilized to obtain new data for the far-infrared spectrum of isotactic polystyrene. The region in which rotational and translational crystalline bands are observed has been investigated and 21 absorptions associated with infrared active crystal lattice modes have been observed in the 7–400 cm^?1 region. Possible assignments of these bands have been attempted, and a comparison with the previously reported data for polypropylene has been made.     

Study of activation parameters and NMR spin-lattice relaxation time in some substituted amines

The present communication reports the experimental values of NMR spin-lattice relaxation time (T₁) and dielectric relaxation time (τ) of piperidine, pyrrole, pyridine, diethylamine, triethylamine and pyrrolidine. The values of activation energy (ΔE_A) obtained using dielectric relaxation time, have been correlated with calculated values of ΔE_A obtained using Arrhenius equation of NMR relaxation time (T₁) for pyridine, diethylamine and pyrrole. Authors have also established a correlation between the experimental values of NMR spin-relaxation time (T₁) with its calculated values obtained using different equations of dielectric relaxation time (τ).