绝缘层上半导体多晶膜激光再结晶临界条件

从理论的角度分析了绝缘衬底对其上面半导体多晶膜激光熔化再结晶过程的影响, 发现低导热的绝缘层使产生固一液相变的临界激光功率有明显的降低.用喇曼光谱测量了激光再结晶SOI层中的应力. 应力的出现是多晶膜内曾经发生过固一液相的佐证.从这一思想出发, 对LPCVD方法制备的大量SOI 样品进行激光再结晶临界条件的研究, 证明了忽略绝缘层低热导影响的模型不能解释实验结果, 而经过修正的公式则可以较好地拟合实验结果, 关键词：     

Spectroscopic and Structural Study of the 1：2 Aluminium（Ⅲ） Complex of Quercetin

Complex formation between aluminium and quercetin（Q） in methanol was investigated by means of 27^Al solid-state, 13^C and 1^H NMR and MS（ESI）, UV and IR spectra. Formation of the 1：2 complex was favored in methanol relative to all other solvent and the predominant species observed of Al（Ⅲ） has a 1：2 stoichiometry. The fine structure of 1：2 aluminum complex of quercetin was that the aluminum central atom chelated with two quereetin molecules and two methoxyl groups between two five membered rings, its coordination is six, the chelated site was 3-hydroxy-4-carbonyl.     

Tight-binding method modelling of photonic crystal waveguides

We present here a tight-binding-like modelling of two-dimensional (2D) photonic crystals (PCs). Adopted from solid-state physics, the concept of generalized Wannier functions is used to construct a localized state basis that allows a parameter-free ab initio study of defects in PCs. We demonstrate here for a 2D triangular lattice of dielectric rods in air, the existence of this localized basis and the possibility to study large scale complex dielectric structures deviating from periodicity. Specific numerical simulations on a split waveguide embedded in this triangular lattice are performed, and they demonstrate the superiority of this method over plane wave based techniques.     

A high-pressure Raman and X-ray diffraction study of the perovskite SrCeO3

A high-pressure structural study of SrCeO₃ has been performed at room temperature by Raman spectroscopy and X-ray diffraction up to 32 and 45 GPa, respectively. A first-order reversible phase transition is observed at about 12 GPa in both techniques. A second weak structural change, taking place between 18 and 25 GPa, can be suspected from Raman data. The increase in the number of Raman bands and diffraction lines is an indication that the symmetry is lowered and the compound does not evolve towards the ideal cubic perovskite structure. A Rietveld analysis of X-ray data was performed for the low-pressure phase and the atomic positions and the cell lattice parameters variations are reported in this paper. The volume compressibility derived from Raman modes (5.6×10⁻¹² Pa⁻¹), involving mainly bond-stretching for each type of polyhedron, is found to be close to the one obtained from volume cell variations measured by X-ray diffraction (7.9×10⁻¹² Pa⁻¹).     

Possible evidence for a narrow isovectorB=2 resonance below pion production threshold

Some evidence is presented for a narrow peak at 1969±2 MeV (FWHM=9±2 MeV) in the missing mass spectrum of the³He(p, d) reaction, with 3 standard deviations. The nature of this state, the mass of which is below the NN threshold, is discussed in connection with structures found in other experiments.     

Ehrenfest's theorem reinterpreted and extended with Wigner's function

For a wave packet evolving quantum mechanically, the rates of change of the expectations and uncertainties of the position and momentum are exactly the same as if Wigner's function instantaneously obeyed a classical Liouville equation (whatever the Hamiltonian). This extension of Ehrenfest's theorem should be useful for dealing with the evolution and manipulation of quantum states.     

Consequences of an algorithm for bridged graphs

Chepoi showed that every breadth first search of a bridged graph produces a cop-win ordering of the graph. We note here that Chepoi's proof gives a simple proof of the theorem that G is bridged if and only if G is cop-win and has no induced cycle of length four or five, and that this characterization together with Chepoi's proof reduces the time complexity of bridged graph recognition. Specifically, we show that bridged graph recognition is equivalent to (C₄,C₅)-free graph recognition, and reduce the best known time complexity from O(n⁴) to O(n^3.376).     

High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors

In this paper we report studies on normal incidence, InAs/In_0.15Ga_0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In_0.15Ga_0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of V_b=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, V_b=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed.