Renormalization group approach to lattice gauge field theories

We study four-dimensional pure gauge field theories by the renormalization group approach. The analysis is restricted to small field approximation. In this region we construct a sequence of localized effective actions by cluster expansions in one step renormalization transformations. We construct also -functions and we define a coupling constant renormalization by a recursive system of renormalization group equations.     

The Monte-Carlo model of a light-emitting diode

The first complete Monte-Carlo model of a surface light-emitting diode is presented in this paper. In the model all important phenomena (including the two-dimensional diffusion of minority carriers before their recombination in the active region and the re-emission of radiation) are taken into account. The influence of various construction parameters on the external quantum efficiency of the homojunction GaAs diode is examined.     

Transport theory of deeply-inelastic heavy-ion collisions based on a random-matrix model II. Study of a one-dimensional model

Typical features of the transport equation derived in a previous paper are studied in the frame of a one-dimensional model. The optical-model Green's function is constructed, and the mean free path is evaluated numerically. The domain of validity of the semiclassical approximation to the transport equation is evaluated, the significance of conserving approximations is pointed out. For strong absorption (short mean free path) it is shown that quantum fluctuations caused by the uncertainty principle are important. Approximation methods are introduced and tested numerically.     

Scattering of electrons by charged dislocations in InSb-type semiconductors

Electron scattering by parallel arrays of charged dislocations in InSb-type semiconductors is considered. In the theoretical approach the nonparabolic structure of the conduction band of the semiconductors considered is taken into account in the approximation of a simplified Kane's band model. The effect of screening by free electrons of the dislocation charge is also included in the theory. The calculated relaxation time of the electrons is used to derive a formula for the dislocation-limited electron mobility in the semiconductors. Some examples of calculations of the charged dislocation-limited mobility as a function of the electron concentration with the dislocation density as a parameter are given for n-InSb at 77 K and 300 K. The ratio of the magnitudes of the charged dislocation-limited mobility to the ionized impurity-limited mobility in n-type material at low temperatures is also discussed.     

Electrical properties of some crystalline salts of adenine

In the present paper we report the first experimental results on ac and dc conductivity and permittivity of adenine hemisulphate hydrate and adenine sulphate measured at atmospheric and high hydrostatic pressures. For both materials ac conductivity is of ^s type, where:s 1·1· Room temperature dc conductivity of adenine hemisulphate hydrate equals approximately 5×10^{–15 –1} cm^–1 with an activation energy of 0·86 eV; dc conductivity of adenine sulphate is less than 10^–16 cm^–1. On the basis of these measurements and those carried out at high pressure, it is concluded that conductivity of adenine hemisulphate hydrate is of electronic type.The authors wish to thank Dr. J. Zachová for the preparation of adenine salts single crystals.     

Black hole uniqueness from a hidden symmetry of Einstein's gravity

A theorem is proven that the only possible exterior solution for a pseudostationary, rotating, electrovacuum black hole with nondegenerate event horizon is the Kerr-Newman solution withM ²-J²/M²-Q²>0. A special role played in the proof of this theorem by the hidden symmetry groupSU(1, 2) of Einstein's equations is established.This essay received the third award from the Gravity Research Foundation for the year 1983 [Ed.].     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

Dynamical dark energy models – dynamical system approach

We study the Friedmann-Robertson-Walker model with dynamical dark energy modelled in terms of the equation of state p _X = w _X (a(z)) ρ _X in which the coefficient w _X is parameterized by the scale factor a or redshift z. We use methods of qualitative analysis of differential equations to investigate the space of all admissible solutions for all initial conditions on the two-dimensional phase plane. We show advantages of representing this dynamics as a motion of a particle in the one-dimensional potential V(a). One of the features of this reduction is the possibility of investigating how typical big rip singularities are in the future evolution of the model. The properties of potential function V can serve as a tool for qualitative classification of all evolution paths. Some important features like resolution of the acceleration problem can be simply visualized as domains on the phase plane. Then one is able to see how large is the class of solutions (labelled by the inset of the initial conditions) leading to the desired property.     

Leptoquark mechanism of neutrino masses within the grand unification framework

We demonstrate the viability of the one-loop neutrino mass mechanism within the framework of grand unification when the loop particles comprise scalar leptoquarks (LQs) and quarks of the matching electric charge. This mechanism can be implemented in both supersymmetric and non-supersymmetric models and requires the presence of at least one LQ pair. The appropriate pairs for the neutrino mass generation via the up-type and down-type quark loops are \(S_3\)–\(R_2\) and \(S_{1,\,3}\)–\(\tilde{R}_2\), respectively. We consider two distinct regimes for the LQ masses in our analysis. The first regime calls for very heavy LQs in the loop. It can be naturally realized with the \(S_{1,\,3}\)–\(\tilde{R}_2\) scenarios when the LQ masses are roughly between \(10^{12}\) and \(5 \times 10^{13}\) GeV. These lower and upper bounds originate from experimental limits on partial proton decay lifetimes and perturbativity constraints, respectively. Second regime corresponds to the collider accessible LQs in the neutrino mass loop. That option is viable for the \(S_3\)–\(\tilde{R}_2\) scenario in the models of unification that we discuss. If one furthermore assumes the presence of the type II see-saw mechanism there is an additional contribution from the \(S_3\)–\(R_2\) scenario that needs to be taken into account beside the type II see-saw contribution itself. We provide a complete list of renormalizable operators that yield necessary mixing of all aforementioned LQ pairs using the language of SU(5). We furthermore discuss several possible embeddings of this mechanism in SU(5) and SO(10) gauge groups.