Mass transport in metals under intensive impulse reactions

An unusually high mobility of atoms under intensive impulse reactions is explained by the behavior of point defects at the shock wave front. It is shown that either a shock wave front or moving dislocations can capture the interstitials, or they can be thermally activated in the direction of the shock wave propagation.     

Dielectric and conductivity relaxations in quaternary ammonium polymer

Ionic conductivity of dry quaternary ammonium polymer, polydiallyldimethylammonium with Cl⁻ and H₂PO₄⁻ counter ions was studied in a wide range of frequencies (10⁻²-10⁷ Hz) and temperatures (300-470 K). The data were analysed within the formalism of permittivity. WAXS, and thermal properties of this polymer were investigated prior to conductivity measurements.     

Dynamic reflection holograms in CdF2 crystals with bistable centers

The diffraction efficiency and the recording and relaxation times of dynamic reflection holograms, recorded in CdF₂ crystals with bistable centers are studied experimentally in the temperature range 20–100°C. In the model experiments which measured the quality of the wave reflected from the hologram, the dynamic wavefront distortions are demonstrated to be efficiently compensated using a holographic corrector based on these crystals. CdF₂ crystals with bistable centers are likely to be useful in solving problems of correction of laser light wavefront and image correction in observation telescopes with nonideal primary mirrors.     

A method for computing the IR radiation of molecular gas jets in the volume approximation

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 478–484, September, 1991.     

Thermal emission spectrum from a semiconductor electron-hole plasma

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 624–629, October, 1991.     

Correlation between time functions of sound pressure, masking, and OAE suppression

Periodic sound-pressure time functions with frequency components below 50 Hz were used to measure within their period (a) the temporal course of masking, called a masking-period pattern (MPP), and (b) the temporal course of suppression of delayed evoked otoacoustic emissions, called a suppression-period pattern (SPP). Three different time functions were used: an alternating Gaussian impulse, its first integral, and its second integral. In each case, the course of the SPP is a mirror image of that of the MPP: Small masking corresponds to small suppression, while strong masking coincides with almost total suppression. Since otoacoustic emissions are assumed to have their origin in the inner ear, it can be argued that simultaneous masking, an effect including central processing, is very strongly based on peripheral processes located in the cochlea. Both MPP and SPP are closely related to the second derivative of the sound-pressure time function.     

Acoustic field in a closed layered shell with resonant systems

The acoustic field inside a shell excited by a spatially inhomogeneous harmonic pressure field is studied. The shell is assumed to have a finite length, a set of orthogonal stiffening ribs, two ends bounding the acoustic volume, and a sound-insulating structure, which includes layers of sound-insulating material, resonant elements, and an interior panel. The shell is considered to be orthotropic with boundary conditions corresponding to a free support. For the acoustic field in the closed volume, analytical expressions are derived with allowance for the elastoacoustic interaction of the shell with the sound-insulating layers and with the medium both inside the shell (with arbitrary impedance values at the ends) and outside it. These expressions are used to investigate the effect of different types of resonant systems on the sound field inside the shell.     

Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers.