Protein recognition using synthetic surface-targeted agents

The design of synthetic agents to disrupt protein-protein interactions has received relatively little attention in recent years. In this review we describe strategies for targeting different types of protein surfaces using mimetics of protein secondary or tertiary structure. In this way strong and selective binding to a protein surface has be achieved and disruption of clinically important protein-protein interactions has been demonstrated in models of human disease.     

Enhanced grain growth in YBa2Cu3O7−δ doped with Ag,Cu, and CuO

Powders of YBa₂Cu₃O_7– were mixed with Ag, Cu, and CuO powders, pressed and sintered in air and oxygen. Grain-growth enhancement has been observed in the doped samples on sintering in oxygen at 980°C and its attributable to a partial melting and decomposition followed by crystallization during cooling. While the mechanisms of the partial melt may differ with dopant, grain growth enhancement appears to be a common feature of partial melt followed by slow cooling. The possibility of using suitable dopants in aiding an aligned grain structure is pointed out.     

Investigation of transition States in bulk and freestanding film polymer glasses

We have performed transition state searches on the potential energy landscape for bulk and freestanding film polymer glasses and identified connected minima. An analysis of the displacements between minima shows that the sites that undergo the greatest displacement are highly localized in space for both the bulk and the thin-film systems studied. In the case of the thin film, the clusters originate at the surface and penetrate into the center of the film thereby coupling the relaxation in the center of the film to the mobile surface layer. Furthermore, the energy barriers between minima are lower in the thin film than in the bulk system. These findings can rationalize the experimentally observed depression of the glass transition temperature in freestanding polymer films.     

Excitation of surface plasma waves over corrugated slow-wave structure

A microwave propagating along vacuum—dielectric—plasma interface excites surface plasma wave (SPW). A periodic slow-wave structure placed over dielectric slows down the SPW. The phase velocity of slow SPW is sensitive to height, periodicity, number of periods, thickness and the separation between dielectric and slow-wave structure. These slow SPW can couple the microwave energy to the plasma and can sustain the discharge. The efficiency of the power coupling is few per cent and is sensitive to separation between dielectric and slow-wave structure.     

Investigations of sol–gel-derived highly (100)-oriented Ba0.5Sr0.5TiO3 : MgO composite thin films for phase-shifter applications

Sol–gel deposition of highly oriented Ba_0.5Sr_0.5TiO₃:MgO composite thin films has shown desirable dielectric constant reduction and higher figure of merit for phase-shifter applications. In this multilayer configuration, MgO distributed homogeneously through the Ba_0.5Sr_0.5TiO₃ (BST50) matrix, and it helped in tailoring the dielectric constant and reducing the loss tangent significantly. In the present study, the high-frequency dielectric behavior of the films has been evaluated by fabricating an eight-element coupled microstrip phase shifter and measuring the degree of phase shift and insertion loss as a function of applied voltage at room temperature. An increase in phase-shifter figure of merit (degree of phase shift per dB insertion loss) from 28°/dB for pure BST50 to 71°/dB for a BST50:MgO film (at 14 GHz and 333 kV/cm) has been observed. PACS 77.55.+f; 81.20.Fw; 73.40.-c; 85.50.-n     

HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam

We show that HfO₂/AlGaN/GaN structures with HfO₂ layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO₂ was found ε_HfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10^–4 A/cm² at the threshold voltage. The comparison of the losses in the samples with and without HfO₂ indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Some Bianchi Type III String Cosmological Models with Bulk Viscosity

We investigate the integrability of cosmic strings in Bianchi III space-time in presence of a bulk viscous fluid by applying a new technique. The behavior of the model is reduced to the solution of a single second order nonlinear differential equation. We show that this equation admits an infinite family of solutions. Some physical consequences from these results are also discussed.     

Nighttime enhancements in TEC near the crest of northern equatorial ionization anomaly during low solar activity period

Enhancement in nighttime total electron content (TEC) near the crest of equatorial ionization anomaly at Bhopal (Geog. 23.2°N, 77.4°E, and MLAT 14.2°N) has been studied for the solar minimum period March 2005- November 2006. TEC data recorded by GPS Ionospheric Scintillation and TEC Monitor (GISTM) GSV4004A receiver is used for the study and results are presented in the paper. More than 10% increase in TEC with respect to background content is considered for analysis. Out of total 138 enhancements, 65 observed during pre midnight hours and 73 during post midnight hours. It is observed that nighttime enhancement in TEC at Bhopal occurs in all seasons; it is more frequent during summer, less during equinox and least during winter months. The enhancement in nighttime TEC can be observed both in geomagnetic disturbed time and in quiet time. We found that mean peak amplitude for pre-midnight TEC enhancement are more in equinox and less in winter, while in post-midnight TEC enhancement it is highest in summer and less in winter. Post-midnight enhancements have smaller peak amplitude as compared to pre-midnight. Also the most probable values for pre- and post-midnights are 4.4 TECU and 2.17 TECU respectively. The percentage occurrence of nighttime TEC enhancement does not show any dependence on solar activity whereas the peak amplitude depends on solar activity. The percentage occurrence of nighttime TEC enhancement decreases as the magnetic activity increases whereas there is no such dependency found with peak amplitude. It is also observed that majority of nighttime TEC enhancements are occurred without scintillation. The localised nighttime TEC enhancements near the crest of equatorial ionization anomaly region have been observed most of the nights during the period of study.     

Design and Analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHz Operations

A Modulation-Doped Field-Effect Transistor (MODFET) structure having quantum wire channel realized in InGaN-GaN material system is presented. This paper presents design and analysis of a novel one-dimensional Modulation-Doped Field-Effect transistor (1D MODFET) in InGaN-GaN material system for microwave and millimeter wave applications. An analytical model predicting the transport characteristics of the proposed MODFET device is also presented. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G. The results are compared with two-dimensional GaN/AlGaN MODFET and HFET devices. The analytical model also predicts that 0.25 m channel length devices will extend the use of InGaN-GaN MODFETs to above 90GHz.     

Phase transition behavior of highly (100) textured sol-gel-derived Ba<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> thin films

We have investigated the relations between microstructure and dielectric properties in order to fabricate sol-gel-derived highly (100) oriented Ba_0.5Sr_0.5TiO₃ (BST 50/50) thin films with properties comparable to those of the bulk material. For the first time, we were able to fabricate BST thin films which exhibited the orthorhombic-to-tetragonal transition in addition to the commonly observed tetragonal-to-cubic transition. We were successful in explaining the commonly observed degradation of the dielectric behavior of BST thin films, when compared to that of the bulk material, in terms of grain size, compositional inhomogeneity (measured in terms of Sr/Ba ratio) between the grain bulk and grain boundary, and mechanical stresses. PACS 77.55.+f; 77.22Gm; 77.80.Bh; 77.80.Dj