X射线光栅微分相衬成像视场分析

X射线光栅微分相衬成像对由轻元素构成的物质的内部探测具有传统吸收成像无法比拟的优势, 尤其在癌症的早期诊断和轻元素材料及器件的无损检测等领域应用潜力巨大. 大视场成像是影响该技术从实验室走向实际应用的重要因素. 针对大视场成像的客观需求, 基于菲涅耳衍射原理和光栅结构特征, 建立了量化物理模型用于分析影响成像视场的因素, 提出了实现大成像视场的有效途径, 为未来大视场光栅微分相衬成像方法的设计和应用提供理论依据.     

1064 nm激光对中性密度滤光片的损伤机理研究

中性密度滤光片的典型结构是在K9玻璃上镀金属膜,来实现对激光的有效吸收.由于损伤阈值较低,严重限制了其在高能激光系统中的应用.实验研究了较高激光能量密度下滤光片的损伤形貌和损伤机理.损伤形貌的变化特征是:随着激光能量密度的增加,滤光片先出现损伤点,后以损伤点为中心产生裂纹,且裂纹长度逐渐变长,最终连接成线状和块状,导致大面积的薄膜脱落.建立了缺陷吸收激光能量升温致中性密度滤光片表面薄膜损伤的模型,计算了薄膜表面的温度和应力分布,讨论了薄膜表面不均匀温升造成的径向、环向和轴向热应力分布.理论分析显示:环向应力是造成薄膜沿径向产生裂纹的主要原因.当激光能量密度大于约2.2 J/cm²,杂质粒子半径大于140 nm且相邻杂质粒子之间的距离小于10 μ m时,裂纹才能大量连接起来引起薄膜的大面积脱落.     

基于遗传算法的混沌系统二自由度比例-积分-微分控制研究

二自由度比例-积分-微分(PID)控制算法简单、实用，但将其应用于复杂非线性系统控制时参数整定困难.运用改进的遗传算法进行二自由度PID控制器参数优化，参数优化的收敛速度快、准确，将其应用于Chen氏混沌系统和同步电动机混沌系统的控制中，仿真研究收到良好的控制效果. 关键词： 混沌系统 遗传算法 比例-积分-微分控制     

硬X射线相位光栅的设计与研制

针对在普通实验室和医院实现40—100keVX射线相衬成像的需求,考虑到成像系统参数、X射线源空间相干特性及光栅衍射效率,设计出硅基相位光栅结构参数.利用我们已发展的光助电化学刻蚀技术研制出直径为5英寸的相位光栅,其空间周期为5.6μm,线宽为2.8μm,深度为40—70μm.在理论分析的基础上,通过提高硅片两端有效工作电压和修正Lehmann电流密度公式,解决了实际刻蚀过程中出现的钻蚀问题.由实验结果可知,本方案对制作大面积高精度相位光栅十分有效。     

N,O-羧甲基壳聚糖的合成和性质研究

采用多段升温法将壳聚糖改性 ,合成了取代度为 1.84、平均分子量为 3.0 8× 10 5、等电点为 7.2 8的N ,O 羧甲基壳聚糖 (CMC) ,分别用紫外光谱、红外光谱、荧光光谱对其结构进行了表征 ,并对其水溶液的Zeta电位、电导率、表面张力以及水分散体系中羧甲基壳聚糖微粒的粒径分布进行了研究 .结果表明 ,N ,O 羧甲基壳聚糖具有表面活性 ;介质的pH值和浓度对羧甲基壳聚糖溶液的稳定性有很大的影响     

染料掺杂光子晶体荧光带隙边缘的激射研究

利用激光全息光刻技术, 在重铬酸盐明胶 感光材料中制备了掺杂有机染料的层状光子晶体. 在532 nm纳秒脉冲激光激励下, 样品的荧光光谱表现出良好的带隙特征; 随着抽运能量的增加, 在荧光带隙带边位置获得了激射光, 并进一步研究了光子晶体的带边位置与染料荧光峰的匹配对激射的影响.带边位置越靠近染料的荧光峰, 激射阈值越低, 反之则不易产生激射.该研究为超低阈值光子晶体激光器的发展提供了思路和方法. 关键词： 全息光刻 光子晶体 荧光带隙 低阈值激射     

NOVEL FORMATION AND DECAY MECHANISMS OF NANOSTRUCTURES ON THE SURFACE

For decades the research on thin-film growth has attracted considerable attention as these kinds of materials have the potential for a new generation of device application. It is known that the nuclei at the initial stage of the islands are more stable than others and certain atoms are inert while others are active. In this paper, by using kinetic Monte Carlo simulations, we will show that, when a surfactant layer is used to mediate the growth, a counter-intuitive fractal-to-compact island shape transition can be induced by increasing deposition flux or decreasing growth temperature. Specifically, we introduce a reaction-limited aggregation (RLA) theory, where the physical process controlling the island shape transition is the shielding effect of adatoms stuck to the stable islands on the incoming adatoms. Moreover, the origin of a transition from triangular to hexagonal and then to inverted triangular as well as the decay characteristics of three-dimensional islands on the surface and relations of our unique predictions with recent experiments will be discussed. Furthermore, we will present a novel idea to make use of the condensation energy of adatoms to control the island evolution along a special direction.     

基于传播圆补偿像散的被动锁模激光器谐振腔设计方法

由于超短脉冲激光器的谐振腔大都采用多镜折叠的形式,像散已成为影响锁模激光器性能优劣的重要问题.本文提出了一种基于传播圆补偿像散的被动锁模激光器谐振腔设计方法,该方法简单、直观、高效,容易找到补偿像散的最佳位置.理论研究表明,当SESAM位于子午和弧矢传播圆交汇处附近时,SESAM处的子午光斑和弧矢光斑大小几乎相等,像散得到补偿.该谐振腔对外界干扰引起的腔镜振动和热透镜焦距的变化均不敏感,谐振腔的抗干扰性很强.实验研究表明,当SESAM位于子午和弧矢传播圆交汇处附近时,锁模激光器可获得稳定连续的锁模激光脉冲,且激光器的抗干扰性很强.本文的理论研究与实验结果相一致.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Mechanochemical Dimerization of Aldoximes to Furoxans

Solvent-free mechanical milling is a new, environmentally friendly and cost-effective technology that is now widely used in the field of organic synthesis. The mechanochemical solvent-free synthesis of furoxans from aldoximes was achieved through dimerization of the in situ generated nitrile oxides in the presence of sodium chloride, Oxone and a base. A variety of furoxans was obtained with up to a 92% yield. The present protocol has the advantages of high reaction efficiency and mild reaction conditions.