强光场中原子的电离速率

以静态场隧道电离为基础,在准静态近似的条件下,对描述强光场中原子及其各阶离子电离的电离速率进行了较为系统的总结,纠正了早期对隧道电离的电离速率公式进行讨论并且后来的计算中被广泛引用的文献「１０」中公式的错误,地部分稀有气体原子及其各了子在线偏振、圆偏振强光场中的了速度及相应的阈值光强进行了比较。     

Ⅳ-Ⅵ族半导体材料磁场下的红外介电函数

给出了经典极限下多能谷Ⅳ-Ⅵ族化合物半导体在磁场下的红外介电函数的一般解析表达式,并通过与k·P模型的结合给出了红外介电函数的半经典处理途径。通过对典型Ⅳ-Ⅵ族化合物半导体材料PbTe红外介电函数的计算,讨论了能带非抛物性和载流子浓度在多能谷体系中的分布效应对红外介电函数的影响。 关键词：     

Si1-xCex/Si量子阱发光材料制备及特性研究

在si(100)衬底上用分子束外延成功生长了Si_(1-x)Ge_x/si量子阱发光材料,发现在生长过程中背景杂质含量直接影响材料的发光特性,用光致发光(PL)和卢瑟福背散射(RBS)对样品质量进行标定。在PL测量中观察到合金量子阱带边激子分辨峰,并对发光峰能和峰宽作了讨论。 关键词：     

Optical properties and highly efficient laser oscillation of Nd:YAG ceramics

Optical absorption, emission spectra have been measured for polycrystalline Nd-doped Y₃Al₅O₁₂ ceramics. Fluorescence lifetimes of 257.6 μs, 237.6 μs, 184.2 μs and 95.6 μs have been obtained for 0.6%, 1%, 2% and 4% neodymium-doped YAG ceramics, respectively. For the first time, highly efficient laser oscillation at 1064 nm has been obtained with this kind of ceramics. Slope efficiency of 53% has been achieved on a uncoated 4.8-mm thick 1% Nd:YAG ceramics sample. Optical to optical conversion efficiency is 47.6%. Laser oscillation has also been obtained with a 2% Nd:YAG ceramics. The optical properties and laser output results have been compared with that of Nd:YAG single crystal grown by the Czochralski method. Almost identical results have been achieved including laser experiments results. But fabrication of Nd:YAG ceramics is much easier compared to the single-crystal growth method. And also large size (now of about 400 mm diameter×5 mm is available) and high-concentration (>1%) Nd:YAG ceramics can be fabricated. The results show that this kind of Nd:YAG ceramics is a very good alternative to Nd:YAG single crystal. Received: 20 April 2000 / Published online: 16 August 2000     

[Mo3S7]分子簇和聚合簇合物的振动光谱和电子光谱

本文报道了分立簇「Ｍｏ３Ｓ７（ｄｔｐ）３Ｉ」１及它的四聚物｛「Ｍｏ３ＳＵ（ｄｔｐ）３」４Ｉ｝．｛（ＨｇＩ３）４．Ｋ｝２（ｄｔｐ＝Ｓ２Ｐ（ＯＣ２Ｈ５）＾－２的ＩＲ,Ｒａｍａｎ和ＵＶ－Ｖｉｓ光谱,并讨论分立的「Ｍｏ３Ｓ７（ｄｔｐ）３Ｉ」在四聚后这些光谱的变化。     

一类广义幂零群

This paper considers such a group G which possesses nontrivial proper subgroups H 1 ,H 2 such that any proper subgroup of G not contained in H 1 ∪ H 2 is p-closed and obtains that if G is soluble,then the number of prime divisors contained in ｜G｜ is 2,3 or 4;if not,then it has a form x N where N/Φ（N） is a non-abelian simple group.Then the structure of such a group is determined for p = 2,H 1 = H 2 under some conditions.     

Generalization of Einstein relation for doped organic semiconductors

Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of k_BT/q, with k_B the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration, the doping level, the mean energy of LUMOs (HOMOs) of the dopant E_Ld (E_Hd) and the host E_L (E_H), as well as their variances. Dopants with E_Ld<E_L (E_Hd>E_H) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those with E_Ld>E_L (E_Hd<E_H) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

ABCD rule for Gaussian beam propagation in the context of quantum optics derived by the IWOP technique

The development of technique of integration within an ordered product (IWOP) of operators extends the Newton-Leibniz integration rule, originally applying to permutable functions, to the non-commutative quantum mechanical operators composed of Dirac’s ket-bra, which enables us to obtain the images of directly mapping symplectic transformation in classical phase space parameterized by [A, B; C, D] into quantum mechanical operator through the coherent state representation, we call them the generalized Fresnel operators (GFO) since they correspond to Fresnel transforms in Fourier optics. Based on GFO we find the ABCD rule for Gaussian beam propagation in the context of quantum optics (both in one-mode and two-mode cases) whose classical correspondence is just the ABCD rule in matrix optics. The entangled state representation is used in discussing the two-mode case.     

Structural imaging of a Si quantum dot: Towards combined PL and TEM characterization

Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.     

Li2O-2B2O3熔体的物性研究

系统测量了四硼酸锂(Li2O-2B2O3)熔体的密度ρ、表面张力γ随着温度的变化规律,实验结果表明在1100K到1500K范围内Li2O-2B2O3高温熔体的密度和表面张力随着温度的升高均线性减小.通过实验数据拟合得出熔体密度与温度关系为ρ(T)=2.574-4.89×10-4T,熔点处LiO-2B2O3熔体的密度为1.992g/cm3;熔体表面张力与温度关系的拟合公式为γ=262.8-4.59×10-2T.