Imaging of s and d partial-wave interference in quantum scattering of identical bosonic atoms

We report on the direct imaging of s and d partial-wave interference in cold collisions of atoms. Two ultracold clouds of 87Rb atoms were accelerated by magnetic fields to collide at energies near a d-wave shape resonance. The resulting halos of scattered particles were imaged using laser absorption. By scanning across the resonance we observed a marked evolution of the scattering patterns due to the energy dependent phase shifts for the interfering s and d waves. Since only two partial-wave states are involved in the collision process the scattering yield and angular distributions have a simple interpretation in terms of a theoretical model.     

Atom-scale ptychographic electron diffractive imaging of boron nitride cones

Ptychographic coherent diffractive imaging (CDI) has been extensively applied using both x rays and electrons. The extension to atomic resolution has been elusive. This Letter demonstrates ptychographic electron diffractive imaging at atomic resolution, permitting identification of structure in a boron nitride helical cone at a resolution of order 1 ?, beyond that of comparative Z-contrast images. A scanning transmission electron microscope is used to create a diverging illumination in a defocused Fresnel CDI geometry, providing a robust strategy leading to a unique solution.     

Quantum interference between the third and fourth exciton states in semiconducting carbon nanotubes using resonance Raman spectroscopy

We exploit an energy level crossover effect [Haroz et al., Phys. Rev. B 77, 125405 (2008)] to probe quantum interference in the resonance Raman response from carbon nanotube samples highly enriched in the single semiconducting chiralities of (8,6), (9,4), and (10,5). UV Raman excitation profiles of G-band spectra reveal unambiguous signatures of interference between the third and fourth excitonic states (E(33) and E(44)). Both constructive and destructive responses are observed and lead to anomalous intensity ratios in the LO and TO modes. Especially large anomalies for the (10,5) structure result from nearly identical energies found for the two E(ii) transitions. The interference patterns demonstrate that the sign of the exciton-phonon coupling matrix elements changes for the LO mode between the two electronic states, and remains the same for the TO mode. Significant non-Condon contributions to the Raman response are also found.     

Binder-free composite electrodes using carbon nanotube networks as a host matrix for activated carbon microparticles

In this research, networks of single-walled carbon nanotubes (SWNTs) were used to host activated carbon (aC) microparticles to fabricate freestanding composite electrodes without the use of polymer binders. The aC-SWNT composite electrodes with up to 50 wt. % aC showed specific surface areas approaching 1000 m²/g and electrical conductivities >36 S/cm. The composite electrodes possessed the properties of both pure SWNT electrodes (e.g. low ohmic drop and rapid ion diffusion) and activated carbon particles (e.g. high specific capacitance). With an interconnected mesoporous microstructure and high electrical conductivity, the CNT networks provide an attractive alternative to polymer binders for forming freestanding electrodes for electrical energy storage devices. Here we show that micron-sized particles can be supported in this framework to utilize the performance enhancement and robustness provided by CNTs. Symmetric electrochemical capacitors fabricated with the electrodes in 6 M potassium hydroxide (KOH) aqueous electrolyte maintained specific capacitances of more than 45 F/g after 30,000 constant-current charge–discharge cycles with a current of 3.6 mA/cm².     

New luminescence measurement facilities in retrospective dosimetry

This paper gives a review of recent developments in luminescence measurement facilities on the Risø TL/OSL reader including radio-luminescence (RL), exo-electron and violet stimulation attachments, and a method for characterising and if necessary correcting for beta irradiation source non-uniformity.We first describe improvements to the existing RL option to allow near infra-red detection (NIR) during irradiation by the built-in ⁹⁰Sr/⁹⁰Y beta source. The RL optical signal is collected by a liquid light guide through an F34-901 interference filter and detection is based on a dedicated thermoelectrically cooled NIR sensitive PMT (detection window peak at 855 nm, FWHM 27 nm). Software and electronics have been modified to allow standard TL and OSL measurements in the same sequence as RL measurements. Together with a new bleaching source based on a high-power UV LED (395 nm; 700 mW/cm²), this facility has been used to measure natural doses in feldspar using the decaying NIR RL signal.Secondly, we present a method for mapping radiation field of the built-in ⁹⁰Sr/⁹⁰Y β-source and estimating grain-location specific dose-rates. This is important for the accuracy of single grain results, when radiation field is spatially non-uniform across the sample area. We document the effect of this correction method and further investigate on the effect of lifting the source to achieve a better dose-rate uniformity.Finally we summarise two recently-developed novel facilities to help investigate (i) the time scales involved in OSL processes (time-resolved exo-electron detection) and (ii) extending the age range (violet stimulated signals from deep quartz OSL traps).     

Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K

The use of cryogenic temperatures (∼77 K) during Au Schottky contact deposition onto n-GaAs produces an increase in barrier height from 0.73 eV for room temperature diodes to 0.82 eV. Not all Schottky metals show this enhancement—for example Pt and Ti do not show any significant change in barrier height whereas Au, Pd and Ni show increases between 7 and 18%. We used X-ray reflectivity to show that the main difference between Au deposited at 77 K and room temperature is a decreased metal roughness while the interfacial roughness between the Au and GaAs is basically the same. As the diodes are annealed to 300 °C both the difference in barrier height and interfacial roughness is lost. This is a simple method with potential for improving the performance of GaAs metal-semiconductor-field-effect-transistors (MESFETs).     

Atomic and electronic structure of mixed and partial dislocations in GaN

Here we present a detailed study of mixed dislocations in GaN, in which the complexities of the atomic arrangement in the cores have been imaged directly for the first time using an aberration corrected scanning transmission electron microscope. In addition to being present as a full-core structure, the mixed dislocation is observed to dissociate into partial dislocations separated by a stacking fault only a few unit cells in length. The generation of this stacking fault appears to be impurity driven and its presence is consistent with theoretical predictions for dislocation dissociation in materials with hexagonal crystal symmetry.     

Programmable imaging with two-axis micromirrors

We demonstrate a means of creating a digital image by using a two-axis tilt micromirror to scan a scene. For each different orientation we extract a single gray scale value from the mirror and combine them to form a single composite image. This allows one to choose the distribution of the samples, and so in principle a variable resolution image could be created. We demonstrate this ability to control resolution and projection by constructing a voltage table that compensates for the nonlinear response of the mirrors to the applied voltage.     

Microbubble-enhanced hemorrhage control using high intensity focused ultrasound

Our objective was to investigate whether hemorrhage control can be achieved faster when high-intensity focused ultrasound (HIFU) is applied in the presence of ultrasound contrast agents (UCA) as compared to HIFU only application. Incisions (3 cm long and 0.5 cm deep) were produced in the livers of anesthetized rabbits. UCA Optison (0.18 ml/kg) was injected into the mesenteric vein. A HIFU applicator (5.5 MHz, 6800 W/cm² in situ) was scanned at a rate of 1–2 mm/s in one direction over the incision (with multiple passes if needed), until hemostasis was achieved. Hemostasis times were 59 ± 23 s (n = 21) in the presence of Optison and 70 ± 23 s (n = 29) without Optison. The presence of Optison produced on average 37% reduction in hemostasis times normalized to initial bleeding rates (p < 0.05), as well as 60% faster formation of the coagulum seal over the incision (p < 0.05). Gross and histological observations showed similar appearance of HIFU lesions produced in the presence of Optison and HIFU lesions produced without Optison. Our results suggest potential utility of UCA for increasing efficiency of HIFU-induced hemostasis of solid organ injuries.     

Dynamic and redundant regulation of LRRK2 and LRRK1 expression

Background  

Mutations within the leucine-rich repeat kinase 2 (LRRK2) gene account for a significant proportion of autosomal-dominant and some late-onset sporadic Parkinson's disease. Elucidation of LRRK2 protein function in health and disease provides an opportunity for deciphering molecular pathways important in neurodegeneration. In mammals, LRRK1 and LRRK2 protein comprise a unique family encoding a GTPase domain that controls intrinsic kinase activity. The expression profiles of the murine LRRK proteins have not been fully described and insufficiently characterized antibodies have produced conflicting results in the literature.