QCD correction to the leptonic decay rate ofD-wave vector mesons

We show that the first order QCD correction to the leptonic decay rate of heavy quark-antiquark³ D ₁ bound state is identical to that for a³ S ₁ state. Some phenomenological implications of this suppression are also discussed.     

内爆驱动式超高速发射技术的初步研究

为获得10 km/s左右的超高速发射能力,以内爆发射器为研究对象,利用AUTODYN 2D软件对口径为8 mm的内爆发射器进行有限元仿真分析,获得了典型状态下的弹丸发射速度。研制了口径为8 mm的内爆发射器,并在压缩管中填充5 MPa氦气进行实验,分别获得了0.55 g铝合金弹丸7.95 km/s和0.37 g镁合金弹丸10.28 km/s的发射速度,与有限元仿真计算结果的速度偏差分别为15.3%和3.7%。结果表明,设计的内爆发射器具备10 km/s发射能力,满足空间碎片撞击和防护研究的超高速发射需求。     

Visual Speech Recognition with Lightweight Psychologically Motivated Gabor Features

Extraction of relevant lip features is of continuing interest in the visual speech domain. Using end-to-end feature extraction can produce good results, but at the cost of the results being difficult for humans to comprehend and relate to. We present a new, lightweight feature extraction approach, motivated by human-centric glimpse-based psychological research into facial barcodes, and demonstrate that these simple, easy to extract 3D geometric features (produced using Gabor-based image patches), can successfully be used for speech recognition with LSTM-based machine learning. This approach can successfully extract low dimensionality lip parameters with a minimum of processing. One key difference between using these Gabor-based features and using other features such as traditional DCT, or the current fashion for CNN features is that these are human-centric features that can be visualised and analysed by humans. This means that it is easier to explain and visualise the results. They can also be used for reliable speech recognition, as demonstrated using the Grid corpus. Results for overlapping speakers using our lightweight system gave a recognition rate of over 82%, which compares well to less explainable features in the literature.     

Imaging of s and d partial-wave interference in quantum scattering of identical bosonic atoms

We report on the direct imaging of s and d partial-wave interference in cold collisions of atoms. Two ultracold clouds of 87Rb atoms were accelerated by magnetic fields to collide at energies near a d-wave shape resonance. The resulting halos of scattered particles were imaged using laser absorption. By scanning across the resonance we observed a marked evolution of the scattering patterns due to the energy dependent phase shifts for the interfering s and d waves. Since only two partial-wave states are involved in the collision process the scattering yield and angular distributions have a simple interpretation in terms of a theoretical model.     

Atom-scale ptychographic electron diffractive imaging of boron nitride cones

Ptychographic coherent diffractive imaging (CDI) has been extensively applied using both x rays and electrons. The extension to atomic resolution has been elusive. This Letter demonstrates ptychographic electron diffractive imaging at atomic resolution, permitting identification of structure in a boron nitride helical cone at a resolution of order 1 ?, beyond that of comparative Z-contrast images. A scanning transmission electron microscope is used to create a diverging illumination in a defocused Fresnel CDI geometry, providing a robust strategy leading to a unique solution.     

Quantum interference between the third and fourth exciton states in semiconducting carbon nanotubes using resonance Raman spectroscopy

We exploit an energy level crossover effect [Haroz et al., Phys. Rev. B 77, 125405 (2008)] to probe quantum interference in the resonance Raman response from carbon nanotube samples highly enriched in the single semiconducting chiralities of (8,6), (9,4), and (10,5). UV Raman excitation profiles of G-band spectra reveal unambiguous signatures of interference between the third and fourth excitonic states (E(33) and E(44)). Both constructive and destructive responses are observed and lead to anomalous intensity ratios in the LO and TO modes. Especially large anomalies for the (10,5) structure result from nearly identical energies found for the two E(ii) transitions. The interference patterns demonstrate that the sign of the exciton-phonon coupling matrix elements changes for the LO mode between the two electronic states, and remains the same for the TO mode. Significant non-Condon contributions to the Raman response are also found.     

Binder-free composite electrodes using carbon nanotube networks as a host matrix for activated carbon microparticles

In this research, networks of single-walled carbon nanotubes (SWNTs) were used to host activated carbon (aC) microparticles to fabricate freestanding composite electrodes without the use of polymer binders. The aC-SWNT composite electrodes with up to 50 wt. % aC showed specific surface areas approaching 1000 m²/g and electrical conductivities >36 S/cm. The composite electrodes possessed the properties of both pure SWNT electrodes (e.g. low ohmic drop and rapid ion diffusion) and activated carbon particles (e.g. high specific capacitance). With an interconnected mesoporous microstructure and high electrical conductivity, the CNT networks provide an attractive alternative to polymer binders for forming freestanding electrodes for electrical energy storage devices. Here we show that micron-sized particles can be supported in this framework to utilize the performance enhancement and robustness provided by CNTs. Symmetric electrochemical capacitors fabricated with the electrodes in 6 M potassium hydroxide (KOH) aqueous electrolyte maintained specific capacitances of more than 45 F/g after 30,000 constant-current charge–discharge cycles with a current of 3.6 mA/cm².     

New luminescence measurement facilities in retrospective dosimetry

This paper gives a review of recent developments in luminescence measurement facilities on the Risø TL/OSL reader including radio-luminescence (RL), exo-electron and violet stimulation attachments, and a method for characterising and if necessary correcting for beta irradiation source non-uniformity.We first describe improvements to the existing RL option to allow near infra-red detection (NIR) during irradiation by the built-in ⁹⁰Sr/⁹⁰Y beta source. The RL optical signal is collected by a liquid light guide through an F34-901 interference filter and detection is based on a dedicated thermoelectrically cooled NIR sensitive PMT (detection window peak at 855 nm, FWHM 27 nm). Software and electronics have been modified to allow standard TL and OSL measurements in the same sequence as RL measurements. Together with a new bleaching source based on a high-power UV LED (395 nm; 700 mW/cm²), this facility has been used to measure natural doses in feldspar using the decaying NIR RL signal.Secondly, we present a method for mapping radiation field of the built-in ⁹⁰Sr/⁹⁰Y β-source and estimating grain-location specific dose-rates. This is important for the accuracy of single grain results, when radiation field is spatially non-uniform across the sample area. We document the effect of this correction method and further investigate on the effect of lifting the source to achieve a better dose-rate uniformity.Finally we summarise two recently-developed novel facilities to help investigate (i) the time scales involved in OSL processes (time-resolved exo-electron detection) and (ii) extending the age range (violet stimulated signals from deep quartz OSL traps).     

Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K

The use of cryogenic temperatures (∼77 K) during Au Schottky contact deposition onto n-GaAs produces an increase in barrier height from 0.73 eV for room temperature diodes to 0.82 eV. Not all Schottky metals show this enhancement—for example Pt and Ti do not show any significant change in barrier height whereas Au, Pd and Ni show increases between 7 and 18%. We used X-ray reflectivity to show that the main difference between Au deposited at 77 K and room temperature is a decreased metal roughness while the interfacial roughness between the Au and GaAs is basically the same. As the diodes are annealed to 300 °C both the difference in barrier height and interfacial roughness is lost. This is a simple method with potential for improving the performance of GaAs metal-semiconductor-field-effect-transistors (MESFETs).     

Atomic and electronic structure of mixed and partial dislocations in GaN

Here we present a detailed study of mixed dislocations in GaN, in which the complexities of the atomic arrangement in the cores have been imaged directly for the first time using an aberration corrected scanning transmission electron microscope. In addition to being present as a full-core structure, the mixed dislocation is observed to dissociate into partial dislocations separated by a stacking fault only a few unit cells in length. The generation of this stacking fault appears to be impurity driven and its presence is consistent with theoretical predictions for dislocation dissociation in materials with hexagonal crystal symmetry.