Molecular Structures of Dimeric and Trimeric Dineopentylaluminum Hydride and Trimeric Diphenylaluminum Hydride

The synthesis of dineopentylaluminum hydride, H‐Al(CH₂CMe₃)₂, is known in the literature since 1988. We determined the crystal structure of this important starting material and found different ring sizes with dimeric versus trimeric formula units. The molecular shape depends on the polarity of the solvent used for recrystallization (n‐pentane or 1,2‐difluorobenzene). The synthesis of diphenylaluminum hydride, which is also long known in the literature, was optimized. It has a trimeric structure in the solid state with an Al₃H₃ heterocycle.     

A metaheuristic approach to solving a multiproduct EOQ-based inventory problem with storage space constraints

This paper considers the well-known static time-continuous multiproduct economic order quantity (EOQ) based inventory management problem with the storage space constraints. This problem is modelled as a combinatorial optimization problem in the corresponding dynamic discrete time system control process. In order to solve this problem approximately, we developed two heuristics: a special heuristic based on a local search technique and a metaheuristic procedure based on the variable neighbourhood search principle. The efficiency of two heuristics is preliminary examined and compared on several randomly generated instances with the same number of products.     

Ga_(Zn)-V_(Zn) acceptor complex defect in Ga-doped Zn O

Gallium(Ga)-doped Zn O is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped Zn O isotopic heterostructures. The(Ga_(Zn)-V_(Zn))~- complex defect, instead of the isolated V_(Zn)~(2-), is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a ~0.78 e V binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements(~(0.82±0.02) e V). These findings contribute to an essential understanding of the(Ga_(Zn)-V_(Zn))~- complex defect and the potential engineering routes of heavily Ga-doped ZnO.