Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Coulomb traction on a penny-shaped crack in a three dimensional piezoelectric body

The axisymmetric problem of a penny-shaped crack embedded in an infinite three-dimensional (3D) piezoelectric body is considered. A general formulation of Coulomb traction on the crack surfaces can be obtained based on thermodynamical considerations of electromechanical systems. Three-dimensional electroelastic solutions are derived by the classical complex potential theory when Coulomb traction is taken into account and the poling direction of piezoelectric body is perpendicular to the crack surfaces. Numerical results show that the magnitude of Coulomb tractions can be large, especially when a large electric field in connection with a small mechanical load is applied. Unlike the traditional traction-free crack model, Coulomb tractions induced by an applied electric field influence the Mode I stress intensity factor for a penny-shaped crack in 3D piezoelectric body. Moreover, compared to the current model, the traditional traction-free crack model always overestimates the effect of the applied electric load on the field intensity factors and energy release rates, which has consequences for 3D piezoelectric fracture mechanics.     

Di­carbonyl­(tropolonato)­rhodium(I), a redetermination

The mol­ecules of the title complex, [Rh(Trop)(CO)₂] (Trop is 2‐hydroxycyclo­hepta‐2,4,6‐trienonate, C₇H₅O₂), exhibit symmetrical but non‐crystallographic square‐planar molecular geometry, with Rh—C distances of 1.825 (10) and 1.826 (9) Å, Rh—O distances of 2.021 (5) and 2.032 (5) Å, and an O—Rh—O bite angle of 79.4 (2)°. Strong Rh⋯Rh and Rh⋯C intermolecular interactions of 3.683 (3) and 3.650 (5) Å, respectively, are also observed.     

Studies of the regioselective ring-opening–closing mode of functionally different thiazolidine type enaminones: en route to the synthesis of trithiaazapentalene derivatives

Trithiaazapentalene derivatives were prepared by the reaction of 2-alkylidene-4-oxothiazolidines with Lawesson's reagent. They are classified as two structurally different trithiaazapentalene compounds that have different contributions of monocyclic 1,2-dithiole and 1,2,4-dithiazole structures and degrees of aromaticity of the bicyclic trithiaazapentalene system. The electron-donating ability of substituents at the C(5) position of the trithiaazapentalene system is recognized as the main cause for changes in π-electron distribution. This is the first complete study of substituent effects on the structure of trithiapentalenes.