Intracellular transport of single-headed molecular motors KIF1A

Motivated by experiments on single-headed kinesin KIF1A, we develop a model of intracellular transport by interacting molecular motors. It captures explicitly not only the effects of adenosine triphosphate hydrolysis, but also the ratchet mechanism which drives individual motors. Our model accounts for the experimentally observed single-molecule properties in the low-density limit and also predicts a phase diagram that shows the influence of hydrolysis and Langmuir kinetics on the collective spatiotemporal organization of the motors. Finally, we provide experimental evidence for the existence of domain walls in our in vitro experiment with fluorescently labeled KIF1A.     

Control of interlayer exchange coupling in Fe/Cr/Fe trilayers by ion beam irradiation

The manipulation of the antiferromagnetic interlayer coupling in epitaxial Fe/Cr/Fe(001) trilayers by 5 keV He ion beam irradiation has been investigated. It is shown that even for irradiation with low fluences a drastic change in strength of the coupling appears. For thin Cr spacers (below 0.6-0.7 nm) it decreases with fluence, becoming ferromagnetic for fluences above 2x10(14) ions/cm(2). The effect is connected with the creation of magnetic bridges in the layered system due to atomic exchange events caused by the bombardment. For thicker Cr spacers an enhancement of the antiferromagnetic coupling strength is found. A possible explanation of the enhancement effect is given.     

n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency

Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 microm or approximately 13 meV work function) is demonstrated by using a 1 x 10(18) cm(-3) Si-doped GaAs emitter and an undoped Al(0.04)Ga(0.96)As barrier structure. The peak responsivity of 6.5 A/W, detectivity of 5.5 x 10(8) Jones, and quantum efficiency of 19% were obtained at 7.1 THz under a bias field of 0.7 kV/cm at 6 K, while the detector spectral response range spans from 3.2 to 30 THz.     

Regulation of stearoyl-CoA desaturase-1 after central and peripheral nerve lesions

Background  

Interruption of mature axons activates a cascade of events in neuronal cell bodies which leads to various outcomes from functional regeneration in the PNS to the failure of any significant regeneration in the CNS. One factor which seems to play an important role in the molecular programs after axotomy is the stearoyl Coenzyme A-desaturase-1 (SCD-1). This enzyme is needed for the conversion of stearate into oleate. Beside its role in membrane synthesis, oleate could act as a neurotrophic factor, involved in signal transduction pathways via activation of protein kinases C.     

Annealing study of two-dimensional patterned Ge nanostructures via nanosphere lithography

Experimental studies on patterning hexagonal Ge nanostructures have been conducted on Si substrates through deposition of Ge with colloidal particles as a mask. The deposited Ge thin film possesses, according to the X-ray diffraction measurements, in plane texture, being epitaxial and aligned with the (111) Si substrate. The size distribution of the patterned Ge nanostructures is narrow, as indicated by the atomic force microscopy and scanning electron microscopy measurements. We have obtained Ge nanostructures with lateral dimension of 490 nm (height 12 nm), 200 nm (height 6 nm) and 82 nm (height 6 nm) by using different sizes of polystyrene spheres. We have performed in depth studies of the Ge nanostructures’ behavior due to thermal and rapid thermal post-annealing processes. FT micro-Raman spectroscopy shows that there is no Si intermixing during the annealing process. In order to quantify the changes in the height and lateral dimension, we have performed atomic force microscopy and white light interferometry analysis. The changes in shape and the decrease in the area of a cross-section of Ge nanostructure will be discussed in respect to similar results shown in the literature for Ge thin films during the annealing process.     

Generalization of the Knizhnik–Zamolodchikov Equations

In this Letter, we introduce a generalization of the Knizhnik–Zamolodchikov equations from affine Lie algebras to a wide class of conformal field theories (not necessarily rational). The new equations describe correlations functions of primary fields and of a finite number of their descendents. Our proposal is based on Nahm's concept of small spaces which provide adequate substitutes for the lowest energy subspaces in modules of affine Lie algebras. We explain how to construct the first order differential equations and investigate properties of the associated connections, thereby preparing the grounds for an analysis of quantum symmetries. The general considerations are illustrated in examples of Virasoro minimal models.     

Near field scanning optical spectroscopy of InP single quantum dots

We study InP quantum dots which are prepared by strain induced self-assembly on GaAs substrates with a GaInP buffer layer using a near field scanning optical microscope operating at near liquid He bath temperatures in the collection mode. Single quantum dots are identified spatially and spectrally due to their photoluminescence spectrum. Series of luminescence lines due to single dots of different sizes are discussed in terms of dot height and width fluctuations. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 7, 497–501 (10 October 1997)     

Binary diffractive beam splitters with arbitrary diffraction angles

Diffractive optical beam splitters designed with iterative Fourier transform type algorithms can produce only certain diffraction angles given by the spatial frequencies used for the computations, which are multiples of a certain base spatial frequency. We have developed a design algorithm that overcomes this limitation and can be used to compute binary diffractive elements with arbitrary diffraction angles. The simulated and experimentally measured properties of optical elements producing beam arrays in circular arrangements are presented and discussed.     

Fabrication of ridge waveguides in zinc-substituted lithium niobate by means of ion-beam enhanced etching

We present results on the fabrication and characterization of ridge waveguides in zinc-substituted lithium niobate. High-quality waveguides were fabricated by a combination of liquid-phase epitaxy and multiple applications of ion-beam enhanced etching. The two major demands on ridge waveguides, a very low side-wall roughness and a rectangle shape with side-wall angles close to 90 degrees , were realized simultaneously by using this technique. Single-mode waveguiding at a wavelength of 1064 nm was demonstrated with attenuation values of 0.9 dB/cm.