Nonlinear and bistable properties of doped PMMA lightguides

Polymer lightguides of PMMA doped with the azo dyes methyl-red and N, N-dihexyl-4-amino-4'-nitro-azobenzene (DHANA) are investigated with respect to their opto-optical properties. The trans-cis photoisomerisation of the dyes leads to reversible polarization-dependent optically induced refractive index changes. The index changes are anisotropic. Birefringence is measured using index matched lightguides. The changes with respect to each polarization are determined by leaky mode spectroscopy and by using a half-integrated interferometer. These changes are intensity dependent and, with a suitable geometry, bistability at low intensities (3 mW/mm³) can be obtained.     

Matrix representation of three-dimensional astigmatic resonators

Three-dimensional astigmatic resonators, typical examples of which are the resonators bounded by cylindrical-spherical mirrors and cylindrical-cylindrical mirrors oriented at an arbitrary crossed angle, are investigated in detail by using a complex curvature tensor concept and generalized tensor ABCD law. Computerized numerical calculations illustrate some interesting characteristics of these astigmatic resonators.     

Surface chemical studies of the influence of In and Al on the decomposition of TEG on GaAs(100)

The interaction of triethylgallium (TEG) with the Ga-stabilized GaAs(100) surface in the presence of In and Al has been investigated using AES (Auger electron spectroscopy), HREELS (high resolution electron energy loss spectroscopy) and TDS (thermal desorption spectroscopy) techniques. Al is shown to greatly increase the saturation surface coverage of TEG on the surface and to suppress the desorption of TEG and diethylgallium (DEG). Etching of the surface Al by TEG is observed, resulting in the formation of gas phase Al organic species. Alkyl migration from GA to Al centres occurs, and the presence of Al substantially enhances the irreversible deposition of C. In is found to enhance DEG desorption and to lower the temperature at which absorbed ethyl groups decompose to gas phase ethene. Computer modelling has been carried out to extract kinetic parameters from measured thermal desorption spectra. These parameters are then used to calculate expected partial growth rates of GaAs during the growth of Ga_xAl_1−xAs and Ga_xIn_1−xAs using TEG. The data provide a molecular level understanding of the GaAs pa rtial growth rate variations arising during the deposition of III–V ternary materials.     

Local solution for the Kadomtsev-Petviashvili equation with periodic conditions

In this article we prove a local existence and uniqueness theorem for the Kadomtsev-Petviashvili Equation (u _t +u _xxx +uu _x ) _x −u _yy =0) in the Sobolev spaces of orders≥3, with initial values in the same spaces, and periodic boundary conditions. This theorem improves previous results based upon the application of singular perturbation techniques.     

Architectural issues related to the optical implementation of an EGS network based on embedded control

Free-space optical implementations of switching networks have been proposed to circumvent many of the system-level problems that may be encountered in systems that require many high-density, high-bandwidth connections. The details of a new class of switching network (the EGS network), that is well-suited to free-space implementations, is described. The common control injection problem that plagues most free-space photonic networks, i.e. how can control information from an electronic source be injected into the network for applications that require relatively high network reconfiguration rates, is examined. A new technique for control injection, called embedded control, which permits network operation even with relatively high network reconfiguration rates is also proposed.