Phase transition in triglycine family of hydrogen bonded ferroelectrics: An interpretation based on structural studies

Using the crystal structure, a comprehensive interpretation of the origin of ferroelectricity in the hydrogen bonded triglycine family of crystals is given. Our detailed analysis showed that the instability of nitrogen double well potential plays a driving role in the mechanism of the ferroelectric transitions in these crystals.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

Self-dual connections,hyperbolic metrics and harmonic mappings on Riemann surfaces

The Sampson-Wolf model of Teichmüller space (using harmonic mappings) is shown to be exactly the same as the more recent Hitchin model (utilizing self-dual connections). Indeed, it is noted how the self-duality equations become the harmonicity equations. An interpretation of the modular group action in this model is mentioned.     

Electron transport in sub-micron GaAs channels at 300 K

Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 μm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×10⁷ cm/s for 0.1 μm samples.     

Calculation on hot-electron noise in semiconductors

Under hot-electron conditions, noise arises both from fluctuations in the carrier velocity and the carrier collision time. The magnitudes of these two contributions are calculated by the Monte-Carlo method for InSb at 77°K.     

Temperatures of Tesla discharges from OH A → X intensity measurements

The OH A²Σ⁺ → X²Π system is used as a diagnostic tool for temperature measurements of Tesla discharges in Ar and He seeded with 0.5 torr H₂O. From relative intensities of low-N′ lines in the 0-0 band we obtain temperatures which are independent of pressure for the range 100–650 torr and which are only a few degrees higher than the estimated wall temperatures. A check on the theoretical line strengths for OH A → X shows 1% agreement for main-branch transitions but only 5% agreement for satellite lines. Self-absorption problems are encountered and corrected for in the He discharge work; from the ≈10% magnitude of the correction, there are significant amounts (8 mtorr) of ground-state OH produced in the He Tesla discharge.     

The complete finitely axiomatized theories of order are dense

We prove a conjecture of Lauchli and Leonard that every sentence of the theory of linear order which has a model, has a model with a finitely axiomatized theory.     

Noble gas halides: The B → X and D → X systems of 136Xe35Cl

The B → X (2870–3100 Å) and D → X (2250–2370 Å) band systems of ¹³⁶Xe³⁵Cl are photographed and vibrationally analyzed. A simultaneous least-squares fit of 41 band-heads in the B-X system and 35 in D-X yields, in part, the following constants (in cm^?1): T_eB = 32 405.8, T_eD = 42 347.9, ω_eB = 194.75, ω_eD = 204.34, ω_eX = 26.22. The ground state dissociation energy ($\text{D}$″_e) is estimated to be 281 ± 10 cm^?1. Potential curves are derived for all three states through Franck-Condon calculations. From these curves the D-state internuclear distance is 0.09 ± .02 Å smaller than the B-state distance.     

Warm electron coefficient in polar semiconductors in the presence of strong electron-electron collisions

An iterative calculation of the warm electron coefficient is presented considering polar mode scattering in a parabolic band. Electron-electron collisions are assumed strong enough to establish a Maxwellian distribution function. The results vary considerably from those of the displaced Maxwellian calculation which has been used earlier for the interpretation of experimental results.