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11.
Luis M. Reyes Geraldo M. Ribeiro Benedicto J.O. Franco JoséLuiz A. Alves Manoel L. de Siqueira 《Solid State Communications》1981,40(12):1031-1034
We have interpreted the KCl:Cu? spectrum in the context of the MS-Xα method. The results, considering only allowed electric-dipole transitions, are in good agreement with the experimental data. Four new absorption bands, peaking at 573, 390, ~324 and ~310nm, at room temperature, are reported. 相似文献
12.
A. L. Stepanov C. Marques E. Alves R. C. da Silva M. R. Silva R. A. Ganeev A. I. Ryasnyansky T. Usmanov 《Technical Physics》2006,51(11):1474-1481
Single-crystal Al2O3(0001) and Al2O3(1120) substrates are implanted by 160-keV Au+ ions with doses from 1015 to 1017 cm?2. Some of the implanted samples are air-annealed at 800–1200°C. The properties of the synthesized composite layers are studied by Rutherford backscattering and linear optical reflection measurements, and their nonlinear optical characteristics are examined by RZ-scanning using a picosecond Nd: YAG laser operating at a wavelength of 1064 nm. The Rutherford backscattering spectra indicate that the implanted impurity concentrates near the surface of the Al2O3. The formation of gold nanoparticles in the Al2O3 can be judged from the characteristic optical plasmon resonance band in the reflectance spectra of the samples irradiated to a dose higher than 6.0 × 1016 cm?2. The synthesized particles are shown to be responsible for nonlinear optical refraction in the samples. The nonlinear refractive index, n 2, and the real part of the third-order susceptibility, Rex(3), of the composite layers are determined. 相似文献
13.
14.
D. Pastor S. Hernndez R. Cusc L. Artús R.W. Martin K.P. ODonnell O. Briot K. Lorenz E. Alves 《Superlattices and Microstructures》2006,40(4-6):440
Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2×1014 to 4×1015 cm−2 and subsequently annealed at 1000 C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 C. The Raman scattering spectra show resonant A1(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery. 相似文献
15.
F. Gloux P. Ruterana T. Wojtowicz K. Lorenz E. Alves 《Superlattices and Microstructures》2006,40(4-6):300
The crystallographic nature of the damage created in GaN implanted by rare earth ions at 300 keV and room temperature has been investigated by transmission electron microscopy versus the fluence, from 7×1013 to 2×1016 at/cm2, using Er, Eu or Tm ions. The density of point defect clusters was seen to increase with the fluence. From about 3×1015 at/cm2, a highly disordered ‘nanocrystalline layer’ (NL) appears on the GaN surface. Its structure exhibits a mixture of voids and misoriented nanocrystallites. Basal stacking faults (BSFs) of I1, E and I2 types have been noticed from the lowest fluence, they are I1 in the majority. Their density increases and saturates when the NL is observed. Many prismatic stacking faults (PSFs) with Drum atomic configuration have been identified. The I1 BSFs are shown to propagate easily through GaN by folding from basal to prismatic planes thanks to the PSFs.When implanting through a 10 nm AlN cap, the NL threshold goes up to about 3×1016 at/cm2. The AlN cap plays a protective role against the dissociation of the GaN up to the highest fluences. The flat surface after implantation and the absence of SFs in the AlN cap indicate its high resistance to the damage formation. 相似文献
16.
Abazov VM Abbott B Abolins M Acharya BS Adams M Adams T Agelou M Ahn SH Ahsan M Alexeev GD Alkhazov G Alton A Alverson G Alves GA Anastasoaie M Andeen T Anderson S Andrieu B Anzelc MS Arnoud Y Arov M Askew A Asman B Jesus AC Atramentov O Autermann C Avila C Ay C Badaud F Baden A Bagby L Baldin B Bandurin DV Banerjee P Banerjee S Barberis E Bargassa P Baringer P Barnes C Barreto J Bartlett JF Bassler U Bauer D Bean A Begalli M Begel M Belanger-Champagne C Bellantoni L Bellavance A Benitez JA 《Physical review letters》2006,97(16):161802
We present a search for a neutral particle, pair produced in pp[over] collisions at sqrt[s]=1.96 TeV, which decays into two muons and lives long enough to travel at least 5 cm before decaying. The analysis uses approximately 380 pb(-1) of data recorded with the D0 detector. The background is estimated to be about one event. No candidates are observed, and limits are set on the pair-production cross section times branching fraction into dimuons + X for such particles. For a mass of 10 GeV and lifetime of 4x10(-11) s, we exclude values greater than 0.14 pb (95% C.L.). These results are used to limit the interpretation of NuTeV's excess of dimuon events. 相似文献
17.
Molar extinction coefficients of some carbohydrates viz. l-arabinose (C5H10O5), d-glucose (C6H12O6), d-mannose (C6H12O6), d-galactose (C6H12O6), d(-) fructose (C6H12O6) and maltose (C12H24O12) in aqueous solutions have been determined at 81, 356, 511, 662, 1173 and 1332 keV by gamma ray transmission method in a
narrow beam good geometry set-up. These coefficients have been found to depend upon the photon energy following a 4-parameter
polynomial. These extinction coefficients for different sugars having the same molecular formula have same values varying
within experimental uncertainty. Within concentration ranges studied, Beer-Lambert law is obeyed very well. 相似文献
18.
Self-injection length in La0.7Ca0.3MnO3-YBa2Cu3O7-δ ferromagnet-superconductor multilayer thin films
We have carried out extensive studies on the self-injection problem in barrierless heterojunctions between La0.7Ca0.3MnO3 (LCMO) and YBa2Cu3O7-δ (YBCO) thin films. The heterojunctions were formed in situ by sequentially growing LCMO and YBCO films on 〈100〉 LaAlO3 (LAO) substrate using a pulsed laser deposition (PLD) system. YBCO micro-bridges with 64 μm width were patterned both on
the LAO (control) and LCMO side of the substrate. Critical current, I
c, was measured at 77 K on both the control side as well as the LCMO side for different YBCO film thickness. It was observed
that while the control side showed a J
c of ∼ 2 × 106 A/cm2, the LCMO side showed about half the value for the same thickness (1800 ?). The difference in J
c indicates that a certain thickness of YBCO has become ‘effectively’ normal due to self-injection. From the measurement of
J
c at two different thicknesses (1800 ? and 1500 ?) of YBCO films both on the LAO as well as the LCMO side, the value of self-injection
length (at 77 K) was estimated to be ∼ 900 ?. To the authors’ best knowledge, this is the first time that self-injection length
has been quantified. A control experiment carried out with LaNiO3 deposited by PLD on YBCO did not show any evidence of self-injection. 相似文献
19.
Abazov VM Abbott B Abolins M Acharya BS Adams M Adams T Agelou M Agram JL Ahn SH Ahsan M Alexeev GD Alkhazov G Alton A Alverson G Alves GA Anastasoaie M Andeen T Anderson S Andrieu B Arnoud Y Askew A Asman B Jesus AC Atramentov O Autermann C Avila C Badaud F Baden A Baldin B Balm PW Banerjee S Barberis E Bargassa P Baringer P Barnes C Barreto J Bartlett JF Bassler U Bauer D Bean A Beauceron S Begel M Bellavance A Beri SB Bernardi G Bernhard R Bertram I Besançon M Beuselinck R Bezzubov VA 《Physical review letters》2005,95(5):051802
We present a measurement of the Zgamma production cross section and limits on anomalous ZZgamma and Zgammagamma couplings for form-factor scales of lambda = 750 and 1000 GeV. The measurement is based on 138 (152) candidates in the eegamma (mumugamma) final state using 320(290) pb(-1) of pp(-1) collisions at square root of s = 1.96 TeV. The 95% C.L. limits on real and imaginary parts of individual anomalous couplings are /h(10,30)Z/ < 0.23, /h(20,40)Z/ < 0.020, /h(10,30)gamma/ < 0.23, and /h(20,40)gamma/ < 0.019 for lambda = 1000 GeV. 相似文献
20.
Abachi S Abbott B Abolins M Acharya BS Adam I Adams DL Adams M Ahn S Aihara H Alitti J Álvarez G Alves GA Amidi E Amos N Anderson EW Aronson SH Astur R Avery RE Baarmand MM Baden A Balamurali V Balderston J Baldin B Banerjee S Bantly J Bartlett JF Bazizi K Bendich J Beri SB Bertram I Bezzubov VA Bhat PC Bhatnagar V Bhattacharjee M Bischoff A Biswas N Blazey G Blessing S Bloom P Boehnlein A Bojko NI Borcherding F Borders J Boswell C Brandt A Brock R Bross A Buchholz D Burtovoi VS Butler JM 《Physical review letters》1996,77(4):595-600