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41.
We report scanning tunneling microscope measurements showing a substantial decrease of the current, almost to zero, on the Si(111)-(7x7) reconstruction in the near-to-contact region under low bias conditions. First principles simulations for the tip-sample interaction and transport calculations show that this effect is driven by the substantial local modification of the atomic and electronic structure of the surface. The chemical reactivity of the adatom dangling bond states that dominate the electronic density of states close to the Fermi level and their spatial localization result in a strong modification of the electronic current. 相似文献
42.
We provide a quick elementary solution of the mean spherical model in a random external field. This also allows an immediate proof of the self-averaging property of the free energy. We calculate the free energy by means of the replica method, i.e., for any (not necessarily integer) replica numbern, and show that when a phase transition occurs the limits
andn 0 are not interchangeable. 相似文献
43.
A Bianchi V model, in the presence of a fluid with shear and rotation, is investigated. Asymptotic solutions are worked out, showing that shear and rotation may give rise to a conflict with present day observations, a problem that can be solved with the help of an inflationary solution. 相似文献
44.
Let be an Artin algebra, let mod be the category of finitely generated -modules, and let Amod be a contravariantly finite and extension closed subcategory. For an indecomposable and not Ext-projective module CA, we compute the almost split sequence 0ABC0 in A from the almost split sequence 0DTrCEC0 in mod. Since the computation is particularly simple if the minimal right A-approximation of DTrC is indecomposable for all indecomposable and not Ext-projective CA, we manufacture subcategories A with the desired property using orthogonal subcategories. The method of orthogonal subcategories is applied to compute almost split sequences for relatively projective and prinjective modules. 相似文献
45.
We present a new method for minimizing a strictly convex function subject to general convex constraints. Constraints are used one at a time, no changes are made in the constraint functions (thus the row-action nature of the algorithm) and at each iteration a subproblem is solved consisting of minimization of the objective function subject to one or two linear equations. Convergence of the algorithm is established and the method is compared with other row-action algorithms for several relevant particular cases.Corresponding author. Research of this author was partially supported by CNPq grant No. 301280/86. 相似文献
46.
Let G be a non-compact connected semisimple Lie group with finite center and let GK denote the centralizer of a maximal compact subgroup K of G inG, the universal enveloping algebra over of the Lie algebra of G. In [4] Lepowsky defines an injective anti-homo morphism P:G
KK
MA, where M is the centralizer in K of a Cartan subalgebraa of the symmetric pair (G,K),K andA are the universal enveloping algebras over corresponding to K anda, respectively, andK
M is the centralizer of M inK. The subalgebra P(G
K) ofK
MA has considerable significance in the infinite dimensional representation theory of G. In this paper we explicitly compute P(G
K) when G=S0o(4,1), and show how this result leads to the determination of all irreducible representations of G and its universal covering group Spin(4,1).Partially supported by CONICET (Argentina) grants. 相似文献
47.
Kim GN Kim EJ Son D Bacala A Imlay R Kirk P McNeil RR Metcalf W Cheng CP Mao ZP Yan Y Xu YT Zhu YC Abashian A Gotow K Kajino F Low E Naito F Piilonen L Childers R Darden C Lusin S Rosenfeld C Wilson S Frautschi M Kagan H Kass R Trahern CG Ko W Lander RL Maeshima K Malchow RL Higashi JR Kurihara Y Maki A Nozaki T Omori T Perez P Sagawa H Sakai Y Sugimoto Y Takaiwa Y Terada S Tsuchiya K Poling R Green J Park IH Sakamoto S Sannes F Schnetzer S Stone R Trentalange S Zimmerman D Miyano K Miyata H 《Physical review letters》1988,61(8):911-914
48.
49.
The formation energies and charge transition levels of vacancy and antisite defects in GaAs and In(0.5)Ga(0.5)As are calculated through hybrid density functionals. In As-rich conditions, the As antisite is the most stable defect in both GaAs and InGaAs, except for n-type GaAs for which the Ga vacancy is favored. The Ga antisite shows the lowest formation energy in Ga-rich conditions. The As antisite provides a consistent interpretation of the defect densities measured at mid-gap for both GaAs/oxide and InGaAs/oxide interfaces. 相似文献
50.