Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

Raman spectroscopy of acoustic phonons in periodic and Fibonacci superlattices

Results of Raman scattering experiments on (a) periodic superlattices made up of GaAs/In_xGa_1−xAs layers with high indium concentrations, (b) GaAs/Ga_1−xAl_xAs Fibonacci superlattices, are presented. We discuss the observed peak positions and intensities using the continuum theory of acoustic wave propagation in layered media and the photo-elastic coupling model.     

Properties of Josephson junctions in the inhomogeneous magnetic field of a system of ferromagnetic particles

The effect of an array of ferromagnetic nanoparticles on the field-dependent critical current of the short overlap Josephson junction is experimentally studied. Large reversible variations of the maximum critical current are observed depending on the magnetic state of the particles. The pronounced commensurability effects are detected which are proved by the additional peaks of magnetic field induced diffraction pattern.     

Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10 Hz laser-plasma radiation source based on a gas puff target

The first results of experiments on direct photo-etching of heated PTFE using a 10 Hz X-ray source based on a laser-irradiated gas puff target are presented. X-ray radiation in the wavelength range from 6 to 20 nm was produced as a result of irradiation of a double-stream gas puff target with Nd:YAG laser pulses of energy 0.8 J and time duration 3 ns. The resulting X-ray pulses with energy of about 100–200 mJ were used to irradiate samples of PTFE to create microstructures by direct photo-etching. Strong enhancement of the photo-etching process was observed for samples heated up to 300 °C. PACS 52.38.Ph; 81.65.Cf; 61.82.Pv     

Effect of accumulation on the formation of multiply charged ions in solids under grazing incidence of multiple laser radiation

The effect of accumulation on the formation of multiply charged ions in optically opaque solids as a function of the number and the angle of incidence of laser pulses is investigated by mass spectrometry. It is revealed that the accumulation effect manifests itself at prethreshold power densities q = 10⁸–10⁹ W/cm² irrespective of the angle of incidence of laser radiation α = 18°–85° and at subthreshold power densities q > 10¹⁰ W/cm² in the case of grazing incidence of laser radiation at an angle α = 85°. The accumulation effect brings about an increase in the maximum charge multiplicity Z _max of tungsten ions and a decrease in the number of impurity ions and in their intensity. No accumulation effect is observed at subthreshold power densities when laser radiation is incident at an angle α = 18°.     

Influence of the defect structure on the electrical conductivity of Pb5Ge3O11 single crystals at high temperatures

The impedance spectra of Pb₅Ge₃O₁₁ single crystals are measured in the frequency range from 5 Hz to 13 MHz at temperatures of 600 to 800 K in dry air and in a dry or wet nitrogen gas. It is found that the temperature and the gas composition significantly affect the electrical properties of the compound. The data obtained are used to discuss the origin of crystal lattice defects and their influence on charge transfer. It is concluded that the conduction is mixed in character (p-type electronic and ionic due to oxygen ions). The proton conduction is shown experimentally to be feasible. The possible mechanisms of proton transport in Pb₅Ge₃O₁₁ are discussed.